公开(公告)号：US11996296B2

公开(公告)日：2024-05-28

申请号：US17528196

申请日：2021-11-17

申请人： Tokyo Electron Limited

发明人： Kae Kumagai ,  Ryutaro Suda ,  Maju Tomura ,  Kenji Ouchi ,  Hiroki Murakami ,  Munehito Kagaya ,  Shuichiro Sakai

IPC分类号： H01L21/311 ,  H01J37/32

CPC分类号： H01L21/31116 ,  H01J37/32449 ,  H01J2237/3341 ,  H01L21/31144

摘要： A substrate processing method includes: (a) carrying a substrate having a first film with a recess, and a mask into a first chamber; (b) adjusting the substrate temperature to 200° C. or higher; (c-1) supplying silicon-containing reactive species into the first chamber, thereby adsorbing the species onto the side wall of the recess; and (c-2) supplying nitrogen-containing reactive species into the first chamber, thereby forming a second film on the side wall of the recess; (d) carrying the substrate into a second chamber; and (e) adjusting the substrate temperature to 100° C. or lower; and (f) etching the bottom of the recess. Further, (a) to (f) are repeated in this order until an aspect ratio of a depth dimension from the opening of the mask to the bottom of the recess becomes 50 or more.

公开(公告)号：US10763106B2

公开(公告)日：2020-09-01

申请号：US16310520

申请日：2017-06-15

申请人： TOKYO ELECTRON LIMITED

发明人： Kenji Ouchi ,  Masato Morishima

IPC分类号： H01L21/02 ,  C23C16/42 ,  C23C16/30 ,  C23C16/455 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32 ,  H01L21/311

摘要： In one embodiment in which a technology which is capable of reducing voids that can occur when burying an insulating film into a trench while suppressing process complication, a method MT for processing a wafer W is provided. The wafer W has a groove 62 formed on the main surface 61 of the wafer W. The method MT includes: step S1 of accommodating the wafer W in a processing chamber 4 of a plasma processing apparatus 10; step S2 of starting supplying a first gas into the processing chamber 4; step S3 of starting supplying plasma generation high-frequency power into the processing chamber 4; and step S4 of starting intermittent supplying a second gas into the processing chamber 4 and starting supplying a third gas into the processing chamber 4 together, the first gas is a nitrogen-containing gas, the second gas is a gas that does not contain halogen, and the third gas is a gas that contains halogen.

公开(公告)号：US09926624B2

公开(公告)日：2018-03-27

申请号：US14747001

申请日：2015-06-23

申请人： TOKYO ELECTRON LIMITED

发明人： Kazuki Yamada ,  Masato Morishima ,  Kenji Ouchi ,  Taiki Katou

IPC分类号： C23C16/34 ,  H01J37/32 ,  C23C16/36 ,  C23C16/507 ,  H01L51/52

CPC分类号： C23C16/345 ,  C23C16/36 ,  C23C16/507 ,  H01J37/3211 ,  H01J37/32174 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L51/5256

摘要： There is provided a method of forming a sealing film to seal a device formed on a substrate, including: supplying a mixture gas including a silicon-containing gas and a halogen element-containing gas or a mixture gas including a silicon-containing gas and a gas containing a functional group having an electronegative property stronger than that of nitrogen, as a first mixture gas, into a processing container; generating plasma of the first mixture gas within the processing container; and forming a first sealing film to cover the device using the first mixture gas activated by the plasma.

公开(公告)号：US10937660B2

公开(公告)日：2021-03-02

申请号：US16310459

申请日：2017-06-15

申请人： TOKYO ELECTRON LIMITED

发明人： Kenji Ouchi

IPC分类号： H01L21/311 ,  C23C16/24 ,  C23C16/50 ,  C23C16/52 ,  C23F4/00 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  H01L21/683

摘要： In one embodiment that provides a technology in which process complication is suppressed and selective pattern film formation is performed, a method MT for processing a wafer W is provided, the wafer W includes a metal portion 61, an insulating portion 62, and a main surface 6, and a surface 61a of the metal portion 61 and a surface 62a of the insulating portion 62 are exposed on the main surface 6 side, the method MT includes: a step S1 of accommodating the wafer W in a processing chamber 4 of a plasma processing apparatus 10; a step S2 of starting supplying O2 gas into the processing chamber 4; and a step S3 of generating a plasma in the processing chamber 4 by the gas in the processing chamber 4 containing a SiF4 gas by supplying the SiF4 gas and plasma generation high-frequency power into the processing chamber 4, the plasma generated in the step S3 contains deposition species and etching species, and, in the plasma generated in the step S3, a proportion occupied by the etching species is greater than a proportion occupied by the deposition species.

公开(公告)号：US10483135B2

公开(公告)日：2019-11-19

申请号：US15915782

申请日：2018-03-08

申请人： TOKYO ELECTRON LIMITED

发明人： Kenji Ouchi

IPC分类号： H01L21/67 ,  H01L21/3213 ,  H01L21/311 ,  C23C16/04 ,  C23C16/34 ,  H01J37/32 ,  H01L21/768

摘要： An etching method for a target object. The target object includes a main surface, grooves formed in the main surface, and an etching target film covering the main surface and surfaces of the grooves. The method includes supplying a first gas into a processing chamber, and supplying a second gas and a high frequency power to generate a plasma of a gas including the second gas in the processing chamber. The first gas contains an oxidizing agent that does not include a hydrogen atom. The second gas contains a compound that includes one or more silicon atoms and one or more fluorine atoms and does not include a hydrogen atom. The etching target film is made of a material that is dry etched by using fluorine, and portions of the etching target film covering the surfaces of the grooves are selectively removed.

公开(公告)号：US10431450B2

公开(公告)日：2019-10-01

申请号：US15915853

申请日：2018-03-08

申请人： TOKYO ELECTRON LIMITED

发明人： Kenji Ouchi

IPC分类号： H01L21/02 ,  H01J37/32 ,  C23C16/04 ,  C23C16/30 ,  C23C16/455 ,  C23C16/509 ,  C23C16/515 ,  C23C16/513 ,  H01L21/683

摘要： A film forming method for a target object including a main surface and grooves formed in the main surface, includes a step of supplying of a first gas into the processing chamber, and a step of supplying a second gas and a high frequency power for plasma generation into the processing chamber to generate in the processing chamber a plasma of a gas including the second gas in the processing chamber. The first gas contains an oxidizing agent that does not include a hydrogen atom. The second gas contains a compound that includes one or more silicon atoms and one or more fluorine atoms and does not include a hydrogen atom. A film containing silicon and oxygen is selectively formed on the main surface of the target object except the grooves.