公开(公告)号：US20150318193A1

公开(公告)日：2015-11-05

申请号：US14651816

申请日：2013-12-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro FUKUDA ,  Akihiro KUBO ,  Taro YAMAMOTO ,  Kenzi YADA ,  Atsushi OOKOUCHI

IPC: H01L21/67

CPC classification number: H01L21/67051 ,  B08B5/00 ,  B08B5/02 ,  B08B5/023 ,  H01L21/67028 ,  H01L21/67034

Abstract: A substrate liquid treatment apparatus comprises a chuck (13) that holds and rotates a wafer, a back surface purging nozzle (15) that discharges a purge gas toward the back surface of the wafer, and a periphery purging nozzle 16 that discharges the purge gas onto the back surface of the wafer. The back surface purging nozzle has a slit-like opening part extending from a central side to a peripheral side of the substrate in a plan view. Vertical distance between the slit-like opening part and the substrate held by the substrate holding unit increases as approaching an end of the opening part on the central side of the substrate. The periphery purging nozzle discharges the purge gas, toward a central part of the substrate, toward a region on the back surface of the substrate, which region is located radially outside an end of the slit-like opening part of the back surface purging nozzle and radially inside an peripheral edge of the substrate.

Abstract translation: 基板液体处理装置包括：保持和旋转晶片的卡盘（13），向晶片背面排出吹扫气体的后表面清洗喷嘴（15），以及将净化气体排出的周边清洗喷嘴16 到晶片的背面。 后表面清洗喷嘴在平面图中具有从基板的中心侧向周​​边侧延伸的狭缝状的开口部。 狭缝状开口部与被基板保持单元保持的基板之间的垂直距离随着接近基板的中心侧的开口部的端部而增大。 周边清洗喷嘴将清洗气体朝向基板的中心部朝向基板的背面的区域排出，该区域位于背面清洗喷嘴的狭缝状开口部的端部的径向外侧， 径向地位于衬底的周边边缘内。

公开(公告)号：US20170225289A1

公开(公告)日：2017-08-10

申请号：US15499402

申请日：2017-04-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro KUBO ,  Masahiro FUKUDA ,  Taro YAMAMOTO ,  Kenzi YADA ,  Masashi ENOMOTO ,  Noboru NAKASHIMA

IPC: B24B37/005 ,  H01L21/67 ,  H01L21/306 ,  B24B37/34 ,  H01L21/02

CPC classification number: B24B37/005 ,  B24B25/00 ,  B24B27/0061 ,  B24B37/34 ,  B24B47/16 ,  B24B49/16 ,  B24D7/18 ,  H01L21/0209 ,  H01L21/30625 ,  H01L21/67046 ,  H01L21/67253

Abstract: There is disclosed a polishing cleaning mechanism configured to be in contact with a rear surface of a substrate which is held in a substrate holding unit for holding the rear surface of the substrate and perform a polishing process and a cleaning process on the rear surface of the substrate, including a cleaning member configured to clean the rear surface of the substrate, a polishing member configured to polish the rear surface of the substrate, and a support member configured to support the polishing member and the cleaning member to face the rear surface of the substrate held in the substrate holding unit, wherein a surface of the polishing member facing the substrate and a surface of the cleaning member facing the substrate differ in relative height from each other.