PLASMA OBSERVATION SYSTEM AND PLASMA OBSERVATION METHOD

    公开(公告)号:US20210225623A1

    公开(公告)日:2021-07-22

    申请号:US17149150

    申请日:2021-01-14

    IPC分类号: H01J37/32 G01J3/28 G01J3/02

    摘要: A plasma observation system includes a plasma processing apparatus which includes a processing container in which a substrate is processed with plasma, and a plurality of observation windows each capable of observing an emission state of the plasma in the processing container; and a measuring device including a light receiver configured to receive a plurality of light beams intersecting in the processing container through a plurality of observation windows, and a controller configured to specify an observation point of the plasma and determine a state of the plasma at the observation point based on the plurality of light beams received by the light receiver.

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

    公开(公告)号:US20210134560A1

    公开(公告)日:2021-05-06

    申请号:US17083709

    申请日:2020-10-29

    IPC分类号: H01J37/32 H05H1/46

    摘要: There is provided a plasma processing apparatus including: a chamber having a processing space in which a plasma processing is performed on a substrate and a synthetic space in which electromagnetic waves are synthesized; a dielectric window configured to partition the processing space and the synthetic space; an antenna unit including a plurality of antennas configured to radiate the electromagnetic waves to the synthetic space; an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit; and a controller configured to control the antenna unit to function as the phased array antenna, wherein the plurality of antennas are helical antennas.

    MICROWAVE PLASMA PROCESSING APPARATUS

    公开(公告)号:US20220277935A1

    公开(公告)日:2022-09-01

    申请号:US17663907

    申请日:2022-05-18

    摘要: A microwave plasma processing apparatus includes a microwave supply part configured to supply a microwave; a microwave emission member provided on a ceiling of a process chamber and configured to emit the microwave supplied from the microwave supply part; and a microwave transmission member configured to close an opening provided in the ceiling and made of a dielectric substance that transmits the microwave transmitted to a slot antenna. The ceiling has at least two recesses provided on an outer side of the opening, each of the at least two recesses having a depth different from each other.

    PLASMA PROCESSING APPARATUS AND CONTROL METHOD

    公开(公告)号:US20210035787A1

    公开(公告)日:2021-02-04

    申请号:US16942145

    申请日:2020-07-29

    IPC分类号: H01J37/32

    摘要: A plasma processing apparatus includes a main container, one or more radio frequency antennas, a plurality of metal windows, and a plasma detector. The one or more radio frequency antennas are configured to generate inductively coupled plasma in a plasma generation region in the main container. The metal windows are disposed between the plasma generation region and the radio frequency antennas while being insulated from each other and from the main container. Further, a plasma detector is connected to each of the metal windows and configured to detect a plasma state.

    MICROWAVE PLASMA PROCESSING APPARATUS
    5.
    发明申请

    公开(公告)号:US20190189398A1

    公开(公告)日:2019-06-20

    申请号:US16214613

    申请日:2018-12-10

    摘要: A microwave plasma processing apparatus includes a microwave supply part configured to supply a microwave, and a microwave emission member provided on a ceiling of a process chamber and configured to emit the microwave supplied from the microwave supply part. A microwave transmission member is provided to close an opening provided in the ceiling and made of a dielectric substance that transmits the microwave transmitted to a slot antenna via the microwave emission member. The ceiling has at least one recess having a depth in a range of λsp/4±λsp/8 on an outer side of the opening when a wavelength of a surface wave of the microwave traveling through the microwave transmission member and propagating along a surface of the ceiling from the opening is taken as λsp.

    PLASMA PROBE DEVICE AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20190074166A1

    公开(公告)日:2019-03-07

    申请号:US16122226

    申请日:2018-09-05

    IPC分类号: H01J37/32

    摘要: A plasma probe device includes an antenna unit installed at an opening formed in a wall of a processing chamber or a mounting table through a sealing member configured to seal between a vacuum space and an atmospheric space, an electrode connected to the antenna unit, and a dielectric support portion made of a dielectric material and configured to support the antenna unit from an outer peripheral side. A surface of the antenna unit which is exposed through the opening and separated from a facing surface of the wall or the mounting table facing the antenna unit by a width is depressed from a surface of the wall or the mounting table where the opening is formed, which faces a plasma generation space.

    PLASMA MEASUREMENT METHOD
    7.
    发明申请

    公开(公告)号:US20230066120A1

    公开(公告)日:2023-03-02

    申请号:US17893621

    申请日:2022-08-23

    IPC分类号: H01J37/32

    摘要: Measuring a plasma state using a probe device in the case of performing plasma processing on a substrate by introducing process gas into a processing container accommodating the substrate and by producing pulsed plasma using an electromagnetic wave pulse obtained by processing an electromagnetic wave generated from an electromagnetic wave oscillator using a pulsing device. An AC voltage to the pulsed plasma is applied via the probe device; transmitting a signal from the pulsed plasma based on the AC voltage via the probe device and measuring data including a current value; and obtaining a state of the pulsed plasma by analyzing the measured data. The frequency of the AC voltage deviates from a frequency of the electromagnetic wave pulse so that the number of data required for the measurement of the pulsed plasma within one cycle of the electromagnetic wave pulse is obtained within allowable time.

    PLASMA PROCESSING METHOD AND PLASMA PROCESSING DEVICE

    公开(公告)号:US20220199369A1

    公开(公告)日:2022-06-23

    申请号:US17599912

    申请日:2020-03-23

    IPC分类号: H01J37/32

    摘要: There is provided a plasma processing method in a plasma processing apparatus including a chamber, a stage on which a substrate is placed in the chamber, a plurality of radiating devices configured to radiate a plurality of electromagnetic waves, and a dielectric window disposed between the plurality of radiating devices and the stage. The method comprises: preparing the substrate on the stage; controlling a phase of at least one of the plurality of electromagnetic waves radiated from the plurality of radiating devices; radiating the plurality of electromagnetic waves into the chamber from the plurality of radiating devices; and processing the substrate using localized plasma generated from a gas supplied between the dielectric window and the stage.

    PLASMA PROCESSING APPARATUS AND CONTROL METHOD

    公开(公告)号:US20210074517A1

    公开(公告)日:2021-03-11

    申请号:US17010035

    申请日:2020-09-02

    摘要: There is provided a plasma processing apparatus including: a processing container; a first electrode provided inside the processing container and connected to a high-frequency power supply; a second electrode provided inside the processing container to face the first electrode, the second electrode being grounded; and a film thickness calculator connected to at least one of the first electrode and the second electrode and configured to calculate a thickness of a film deposited on the at least one of the first electrode and the second electrode.

    PLASMA DENSITY MONITOR, PLASMA PROCESSING APPARATUS, AND PLASMA PROCESSING METHOD.

    公开(公告)号:US20200381224A1

    公开(公告)日:2020-12-03

    申请号:US16883500

    申请日:2020-05-26

    IPC分类号: H01J37/32 H01L21/67

    摘要: A plasma density monitor for monitoring a plasma density of surface wave plasma in a chamber accommodating a substrate and performs a plasma process on the substrate. The monitor includes: a monopole antenna installed to extend from a wall of the chamber toward an interior of the chamber and to be perpendicular to an inner wall surface of the chamber, and configured to receive a surface wave; a coaxial line configured to extract a detection value from a signal received by the monopole antenna; a length adjuster configured to adjust a length of the monopole antenna; and a controller configured to control the length adjuster so as to obtain a wavelength of the surface wave and the plasma density of the surface wave plasma from the wavelength of the surface wave.