公开(公告)号：US20170207076A1

公开(公告)日：2017-07-20

申请号：US15326018

申请日：2015-05-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuya DOBASHI ,  Nobuyuki TAKAHASHI ,  Tatsuya SUZUKI

IPC: H01L21/02 ,  H01L21/311 ,  G03F7/42 ,  B08B5/00 ,  B08B7/00 ,  H01L21/027 ,  H01L21/67

CPC classification number: H01L21/0206 ,  B08B5/00 ,  B08B7/0035 ,  G03F7/42 ,  G03F7/427 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207

Abstract: Disclosed is a substrate cleaning method. In this substrate cleaning method, a step (step 10) is performed wherein a removal target film and located above a processing target film is patterned; after step 10, a step (step 11) is performed wherein the patterned removal target film is used as an etching mask to perform anisotropic etching on the processing target film; after step 11, a step (step 12) is performed wherein the remaining removal target film on the processing target film is subjected to gas chemical etching; and after step 12, a step (step 14) is performed wherein a target substrate, which includes the surface of the processing target film, is irradiated with gas clusters, thereby cleaning the surface of the processing target film by removing non-reactive or non-volatile residues remaining on the surface of the processing target film.