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公开(公告)号：US20180369881A1
公开(公告)日：2018-12-27
申请号：US15779894
申请日：2016-10-20
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yukimasa SAITO , Toshiki HINATA , Kazuya DOBASHI , Kyoko IKEDA , Shuji MORIYA
IPC: B08B9/00 , H01L21/67 , H01L21/687 , H01L21/02
CPC classification number: B08B9/00 , B08B5/02 , C23C16/4401 , C23C16/4412 , C23C16/45563 , C23C16/45589 , H01L21/02057 , H01L21/67028 , H01L21/68764
Abstract: According to the present invention, a substrate processing apparatus has a chamber (1), a stage (4) for holding a substrate (W) to be processed in the chamber (1), and a nozzle part (13) from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber (1) is performed by: placing a prescribed reflecting member (dW, 60) in the chamber (1), blasting a gas cluster (C) onto the reflecting member (dW, 60), and applying the gas-cluster flow reflected by the reflecting member (dW, 60) onto a wall section of the chamber (1) to remove particles (P) adhered to the wall section of the chamber (1).
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公开(公告)号：US20210268556A1
公开(公告)日：2021-09-02
申请号：US17258431
申请日：2019-07-01
Applicant: Tokyo Electron Limited
Inventor： Kyoko IKEDA , Kazuya DOBASHI
Abstract: A cleaning method that removes contaminants adhering to a stage in a chamber, includes: setting a pressure in a chamber to a predetermined vacuum pressure; supplying a first gas that forms a shock wave toward the stage; and supplying a second gas that does not form the shock wave toward the stage.
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公开(公告)号：US20210107041A1
公开(公告)日：2021-04-15
申请号：US16496714
申请日：2018-02-09
Applicant: TOKYO ELECTRON LIMITED , IWATANI CORPORATION
Inventor： Kazuya DOBASHI , Takehiko ORII , Yukimasa SAITO , Kunihiko KOIKE , Takehiko SENOO , Koichi IZUMI , Yu YOSHINO , Tadashi SHOJO , Keita KANEHIRA
Abstract: There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.
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4.发明申请公开(公告)号：US20190035651A1
公开(公告)日：2019-01-31
申请号：US16071480
申请日：2016-12-08
Applicant: TOKYO ELECTRON LIMITED
Inventor： Kazuya DOBASHI
Abstract: A substrate cleaning method includes injecting a cluster generating gas from a cluster nozzle into a processing chamber, generating gas clusters by adiabatically expanding the cluster generating gas, and removing particles adhered to a target substrate in the processing chamber by irradiating the gas clusters onto the target substrate. The cluster generating gas is selected based on a product Φ of energy K per molecule or atom of the cluster generating gas that is expressed by the following equation (1) and an index C indicating the ease with which the gas forms clusters that is expressed by the following equation (2), K=1/2mv2=γ/γ−1kBT0 . . . (1) C=(Tb/T0)γ/γ−1 . . . (2) where kB: a Boltzmann constant, γ: a specific heat ratio of the cluster generating gas, m: a mass of the cluster generating gas, v: a speed of the cluster generating gas, T0: a gas supply temperature, Tb: a boiling point of the cluster generating gas.
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公开(公告)号：US20180355465A1
公开(公告)日：2018-12-13
申请号：US15781242
申请日：2016-10-25
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yukimasa SAITO , Toshiki HINATA , Kazuya DOBASHI , Kyoko IKEDA , Shuji MORIYA
IPC: C23C14/02 , C23C16/02 , H01L21/304 , C23C14/56 , C23C14/50 , H01L21/687 , H01L21/02
CPC classification number: C23C14/022 , C23C14/02 , C23C14/505 , C23C14/564 , C23C16/02 , H01L21/02041 , H01L21/302 , H01L21/304 , H01L21/68714
Abstract: A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.
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Patent Agency Ranking
公开(公告)号：US20220406572A1
公开(公告)日：2022-12-22
申请号：US17755406
申请日：2020-10-15
Applicant: Tokyo Electron Limited
Inventor： Kenichi OYAMA , Shohei YAMAUCHI , Kazuya DOBASHI , Akitaka SHIMIZU
IPC: H01J37/32 , H01L21/3065 , H01L21/02
Abstract: The present disclosure appropriately shortens a processing step for processing a substrate in which a silicon layer and a silicon germanium layer are alternatively laminated. The present disclosure provides a substrate processing method of processing the substrate in which the silicon layer and the silicon germanium layer are alternatively laminated, which includes forming an oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma.
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公开(公告)号：US20220384152A1
公开(公告)日：2022-12-01
申请号：US17883997
申请日：2022-08-09
Applicant: Tokyo Electron Limited
Inventor： Kazuya DOBASHI , Chishio KOSHIMIZU
Abstract: A processing method includes: disposing a workpiece in a processing container of a processing apparatus, and maintaining an inside of the processing container in a vacuum state; providing a cluster nozzle in the processing container; supplying a cluster generating gas to the cluster nozzle and adiabatically expanding the cluster generating gas in the cluster nozzle, thereby generating gas clusters; generating plasma in the cluster nozzle to ionize the gas clusters and injecting the ionized gas clusters onto the workpiece; supplying a reactive gas to the cluster nozzle and exposing the reactive gas to the plasma such that the reactive gas becomes monomer ions or radicals; and supplying the monomer ions or radicals to the processing container, thereby exerting a chemical reaction on a substance present on a surface of the workpiece.
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8.发明申请公开(公告)号：US20220001426A1
公开(公告)日：2022-01-06
申请号：US17295971
申请日：2019-11-20
Applicant: Tokyo Electron Limited
Inventor： Kyoko IKEDA , Kazuya DOBASHI , Tsunenaga NAKASHIMA , Kenji SEKIGUCHI , Shuuichi NISHIKIDO , Masato NAKAJO , Takahiro YASUTAKE
IPC: B08B5/02
Abstract: A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.
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公开(公告)号：US20160148818A1
公开(公告)日：2016-05-26
申请号：US14900600
申请日：2014-04-09
Applicant: TOKYO ELECTRON LIMITED
Inventor： Kazuya DOBASHI , Akihito HAGIWARA
IPC: H01L21/311 , H01L21/687 , H01L21/67
CPC classification number: H01L21/31111 , H01L21/6708 , H01L21/68764
Abstract: In a titanium oxide film removal method and apparatus, a silicon substrate having the titanium oxide film is supported on a spin chuck. A first mixed aqueous solution including hydrofluoric acid and non-oxidizing acid or a second mixed aqueous solution including hydrofluoric acid and organic acid is supplied to the silicon substrate while rotating the silicon substrate together with the spin chuk. The first or the second aqueous solution comes into contact with the titanium oxide film existing on the silicon substrate to remove the titanium oxide film by a reaction between the first or the second mixed aqueous solution and the titanium oxide film.
Abstract translation: 在氧化钛膜去除方法和装置中，将具有氧化钛膜的硅衬底支撑在旋转卡盘上。 将包含氢氟酸和非氧化性酸的第一混合水溶液或包含氢氟酸和有机酸的第二混合水溶液供应到硅衬底，同时使硅衬底与旋转while一起旋转。 第一或第二水溶液与存在于硅衬底上的氧化钛膜接触，以通过第一或第二混合水溶液与氧化钛膜之间的反应来除去氧化钛膜。
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公开(公告)号：US20150251913A1
公开(公告)日：2015-09-10
申请号：US14634948
申请日：2015-03-02
Applicant: TOKYO ELECTRON LIMITED
Inventor： Takashi MATSUMOTO , Kazuya DOBASHI
IPC: C01B31/04 , H01J37/305
CPC classification number: H01J37/3056 , C01B32/184 , C01B32/194 , C01B2204/06 , C01B2204/22 , H01J2237/0245 , H01J2237/3151
Abstract: A graphene machining method includes irradiating a GCB (Gas Cluster Beam) onto graphene.
Abstract translation: 石墨烯加工方法包括将GCB（气体簇束）照射到石墨烯上。
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