公开(公告)号：US20210246550A1

公开(公告)日：2021-08-12

申请号：US17163889

申请日：2021-02-01

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Toru ISHII ,  Yuji SESHIMO ,  Yuichiro SASE

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52

Abstract: A film deposition apparatus includes a rotary cable disposed in a vacuum chamber; multiple stages on each of which a substrate is placeable, the stages being arranged along a circumferential direction of the rotary table; a process area configured to supply a process gas toward an upper surface of the rotary table; a heat treatment area that is disposed apart from the process area in the circumferential direction of the rotary table and configured to heat-treat the substrate at a temperature higher than a temperature used in the process area; and a cooling area that is disposed apart from the heat treatment area in the circumferential direction of the rotary table and configured to cool the substrate.

公开(公告)号：US20200232090A1

公开(公告)日：2020-07-23

申请号：US16488217

申请日：2018-02-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki MAEHARA ,  Naoki WATANABE ,  Toru ISHII ,  Kanto NAKAMURA ,  Makoto SAITO ,  David HURLEY ,  Ian COLGAN

IPC: C23C14/54 ,  H01L21/683 ,  H01L21/67 ,  H01L21/677 ,  H01L43/12 ,  C23C14/56 ,  C23C14/50 ,  C23C14/52

Abstract: A substrate processing device and a processing system process substrates each having a magnetic layer individually and are provided with: a support unit for supporting a substrate; a heating unit for heating the substrate supported on the support unit; a cooling unit for cooling the substrate supported on the support unit; a magnet unit for generating a magnetic field; and a processing chamber accommodating the support unit, the heating unit, and the cooling unit. The magnet unit includes a first and a second end surface which extend in parallel. The first and the second end surface are opposite to each other while being spaced apart from each other. The first end surface corresponds to a first magnetic pole of the magnet unit. The second end surface corresponds to a second magnetic pole of the magnet unit. The processing chamber is disposed between the first and the second end surface.

公开(公告)号：US20230416920A1

公开(公告)日：2023-12-28

申请号：US18210409

申请日：2023-06-15

Applicant: Tokyo Electron Limited

Inventor： Tatsuya YAMAGUCHI ,  Yutaka SASAKI ,  Makoto TAKAHASHI ,  Toru ISHII ,  Naoshige FUSHIMI ,  Koji YOSHII

IPC: C23C16/46 ,  C23C16/458 ,  C23C16/52 ,  C23C16/56 ,  C23C16/34 ,  C23C16/455

CPC classification number: C23C16/466 ,  C23C16/4584 ,  C23C16/52 ,  C23C16/56 ,  C23C16/345 ,  C23C16/45544 ,  H01L21/0217

Abstract: A substrate processing apparatus includes: a processing container that accommodates a substrate; a processing gas supply that supplies a processing gas into the processing container; an exhaust that exhausts an inside of the processing container; a heater that heats the processing container; and a cooling gas injector that injects a cooling gas for cooling the substrate.

公开(公告)号：US20220223408A1

公开(公告)日：2022-07-14

申请号：US17647032

申请日：2022-01-05

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Toru ISHII ,  Yuji SESHIMO ,  Yuichiro SASE

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/40 ,  C23C16/56 ,  C23C16/458

Abstract: A method for depositing a silicon oxide film is provided. In the method, a silicon oxide film is deposited on a substrate by Atomic Layer Deposition with plasma while heating the substrate to a first temperature of 600° C. or higher. The silicon oxide film is annealed at a second temperature higher than the first temperature after completing the depositing the silicon oxide film.