公开(公告)号：US10896842B2

公开(公告)日：2021-01-19

申请号：US15966506

申请日：2018-04-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Wataru Yoshikawa ,  Kazuki Moyama ,  Nobuyuki Okayama ,  Kenji Sudou ,  Yasuhiro Otsuka

IPC: H01L21/687 ,  C04B37/02 ,  H01L21/67 ,  B23P19/04 ,  F16B11/00

Abstract: A manufacturing method of sample table is provided. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and the manufacturing method includes: preparing an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and preparing a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion.

公开(公告)号：US10144040B2

公开(公告)日：2018-12-04

申请号：US14356719

申请日：2012-10-17

Applicant: Tokyo Electron Limited

Inventor： Wataru Yoshikawa ,  Naoki Matsumoto

IPC: B08B7/00 ,  C23C16/511 ,  H01J37/32

Abstract: A plasma processing apparatus includes a slot plate of an antenna and the slot plate has slots arranged in a circumferential direction thereof with respect to an axis line. A microwave is introduced into a processing space from the antenna via a dielectric window, and a through hole is formed in the dielectric window along the axis line. A plasma processing method performed in the plasma processing apparatus includes performing a first cleaning process by radiating the microwave from the antenna and supplying a cleaning gas from a cleaning gas supply system; and performing a second cleaning process by radiating the microwave from the antenna and supplying the cleaning gas from the cleaning gas supply system. A first pressure of the processing space in the performing of the first cleaning process is set to be lower than a second pressure thereof in the performing of the second cleaning process.

公开(公告)号：US20140299152A1

公开(公告)日：2014-10-09

申请号：US14356719

申请日：2012-10-17

Applicant: Tokyo Electron Limited

Inventor： Wataru Yoshikawa ,  Naoki Matsumoto

IPC: B08B7/00

CPC classification number: B08B7/0035 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32862

Abstract: A plasma processing apparatus includes a slot plate of an antenna and the slot plate has slots arranged in a circumferential direction thereof with respect to an axis line. A microwave is introduced into a processing space from the antenna via a dielectric window, and a through hole is formed in the dielectric window along the axis line. A plasma processing method performed in the plasma processing apparatus includes performing a first cleaning process by radiating the microwave from the antenna and supplying a cleaning gas from a cleaning gas supply system; and performing a second cleaning process by radiating the microwave from the antenna and supplying the cleaning gas from the cleaning gas supply system. A first pressure of the processing space in the performing of the first cleaning process is set to be lower than a second pressure thereof in the performing of the second cleaning process.

Abstract translation: 等离子体处理装置包括天线的槽板，槽板具有相对于轴线在其圆周方向上布置的槽。 微波经由电介质窗从天线引入处理空间，并且在电介质窗口中沿着轴线形成通孔。 在等离子体处理装置中执行的等离子体处理方法包括通过从天线辐射微波并从清洁气体供应系统提供清洁气体来执行第一清洁处理; 以及通过从天线辐射微波并从清洁气体供应系统供应清洁气体来执行第二清洁处理。 执行第一清洗处理时的处理空间的第一压力在执行第二清洗处理时被设定为低于其第二压力。

公开(公告)号：US08889023B2

公开(公告)日：2014-11-18

申请号：US13728551

申请日：2012-12-27

Applicant: Tokyo Electron Limited

Inventor： Naoki Matsumoto ,  Wataru Yoshikawa ,  Yasuhiro Seo ,  Kazuyuki Kato

IPC: B44C1/22 ,  C03C1/00 ,  C03C25/68 ,  C23F1/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/3213

CPC classification number: H01J37/32449 ,  H01J37/32192 ,  H01J37/32238 ,  H01L21/3065 ,  H01L21/32136

Abstract: A plasma processing apparatus includes a flow splitter for dividing a common gas into two common gas streams of common gas branch lines. A central introduction portion connected to one of the common gas branch lines supplies a common gas to a central portion of a substrate to be processed. A peripheral introducing portion connected to the other one of the common gas branch lines supplies the common gas to a peripheral portion of the substrate. The peripheral introducing portion has peripheral inlets arranged about a circumferential region above the substrate. An additive gas line is connected to an additive gas source to add an additive gas to at least one of the common gas branch lines. In addition, an electron temperature of a plasma in a region where the peripheral inlets are disposed is lower than that in a region where the introduction portion is disposed.

Abstract translation: 等离子体处理装置包括用于将普通气体分成公共气体支线的两个公共气体流的分流器。 连接到公共气体支路之一的中心引入部分将公共气体提供给待处理的基板的中心部分。 连接到另一个公共气体支路的周边引入部分将公共气体提供给基板的周边部分。 周边引入部具有围绕基板上方的圆周区域布置的周边入口。 添加气体管线连接到添加气体源，以将添加气体添加到至少一个公共气体分支管线。 此外，设置周边入口的区域中的等离子体的电子温度低于放置引入部分的区域中的等离子体的电子温度。