公开(公告)号：US20190301019A1

公开(公告)日：2019-10-03

申请号：US16363531

申请日：2019-03-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshimasa WATANABE ,  Masahiro OKA ,  Jinwang LI ,  Yuuki YAMAMOTO ,  Hirokazu UEDA

IPC: C23C16/505 ,  C23C16/52 ,  C23C16/22

Abstract: There is provided a boron-based film forming method for forming a boron-based film mainly containing boron on a substrate. The method includes steps of loading a substrate into a chamber of a film forming apparatus for forming the boron-based film by plasma CVD using capacitively-coupled plasma, supplying a processing gas containing a boron-containing gas into the chamber, applying a high frequency power for generating the capacitively-coupled plasma and forming the boron-based film on the substrate by generating a plasma of the processing gas by the high frequency power. A film stress of the boron-based film is adjusted by the high frequency power in the applying step.

公开(公告)号：US20210090888A1

公开(公告)日：2021-03-25

申请号：US17041767

申请日：2019-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Jinwang LI ,  Masahiro OKA ,  Yoshimasa WATANABE ,  Yuuki YAMAMOTO ,  Hiroyuki IKUTA

IPC: H01L21/033 ,  H01L21/02 ,  C23C16/02 ,  C23C16/50 ,  C23C16/455 ,  C23C16/28

Abstract: A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.

公开(公告)号：US20190244838A1

公开(公告)日：2019-08-08

申请号：US16263236

申请日：2019-01-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshimasa WATANABE ,  Masahiro OKA ,  Hirokazu UEDA ,  Yuuki YAMAMOTO

IPC: H01L21/67 ,  H01L21/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/40 ,  C23C16/511

CPC classification number: H01L21/67063 ,  C23C16/0236 ,  C23C16/401 ,  C23C16/455 ,  C23C16/511 ,  H01L21/02129 ,  H01L21/02274

Abstract: A method of forming a boron-based film includes forming the boron-based film mainly containing boron on a substrate by plasma CVD using plasma of a processing gas including a boron-containing gas; and controlling film stress of the formed boron-based film by adjusting a process parameter.