公开(公告)号：US20200161135A1

公开(公告)日：2020-05-21

申请号：US16690958

申请日：2019-11-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TAKAGI ,  Yoshimasa WATANABE

IPC: H01L21/268 ,  H01L21/02

Abstract: A method of filling a recess according to one embodiment of the present disclosure comprises heating an amorphous semiconductor film without crystallizing the amorphous semiconductor film by radiating laser light to the amorphous semiconductor film embedded in the recess.

公开(公告)号：US20180350598A1

公开(公告)日：2018-12-06

申请号：US15997431

申请日：2018-06-04

Applicant: Tokyo Electron Limited

Inventor： Yoshimasa WATANABE ,  Masahiro OKA ,  Hirokazu UEDA

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/3205 ,  C23C16/28 ,  C23C16/50 ,  C23C16/56

Abstract: In a method for removing a boron film formed on a substrate by CVD, heat treatment is performed on a part or all boron film in an oxidizing atmosphere and oxidizing a heat-treated portion. Then, an oxidized portion of the boron film is removed by water or aqueous solution containing electrolyte ions.

公开(公告)号：US20190301019A1

公开(公告)日：2019-10-03

申请号：US16363531

申请日：2019-03-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshimasa WATANABE ,  Masahiro OKA ,  Jinwang LI ,  Yuuki YAMAMOTO ,  Hirokazu UEDA

IPC: C23C16/505 ,  C23C16/52 ,  C23C16/22

Abstract: There is provided a boron-based film forming method for forming a boron-based film mainly containing boron on a substrate. The method includes steps of loading a substrate into a chamber of a film forming apparatus for forming the boron-based film by plasma CVD using capacitively-coupled plasma, supplying a processing gas containing a boron-containing gas into the chamber, applying a high frequency power for generating the capacitively-coupled plasma and forming the boron-based film on the substrate by generating a plasma of the processing gas by the high frequency power. A film stress of the boron-based film is adjusted by the high frequency power in the applying step.

公开(公告)号：US20150289316A1

公开(公告)日：2015-10-08

申请号：US14746651

申请日：2015-06-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro SHIMIZU ,  Yoshimasa WATANABE ,  Kentaro SHIRAGA

IPC: H05B1/02 ,  H01L21/67 ,  H01L21/324 ,  H05B6/00 ,  B05D3/06

CPC classification number: H05B1/0233 ,  B05D3/06 ,  H01L21/324 ,  H01L21/67115 ,  H05B6/00 ,  H05B6/6447 ,  H05B6/705 ,  H05B6/806

Abstract: An electromagnetic heating device for heating a target object by irradiating electromagnetic wave includes a chamber configured to accommodate the target object, an electromagnetic wave irradiation unit configured to irradiate the electromagnetic wave to the target object in the chamber, wherein an oscillation frequency of the irradiated electromagnetic wave is variable, and a control unit configured to control heating by the electromagnetic wave. The control unit draws, on a complex plane, complex relative permittivity characteristics indicating change in a complex relative permittivity of the target object when a frequency of the irradiated electromagnetic wave varies, also draws a non-reflection curve on the complex plane, determines a frequency of the electromagnetic wave and a thickness of the target object based on a value derived from an intersection point between the complex relative permittivity characteristics and the non-reflection curve, and performs electromagnetic heating based on the determined frequency and thickness.

Abstract translation: 用于通过照射电磁波加热目标物体的电磁加热装置包括：被配置为容纳目标物体的室;电磁波照射单元，被配置为将电磁波照射到室内的目标物体，其中，照射的电磁波的振荡频率 波是可变的，并且控制单元被配置为通过电磁波来控制加热。 控制单元在复平面上绘制当照射的电磁波的频率变化时指示目标物体的复相对介电常数的变化的复相对介电常数特性，还在复平面上绘制非反射曲线，确定频率 基于由复相对介电常数特性和非反射曲线之间的交点导出的值的目标物体的厚度，并根据所确定的频率和厚度进行电磁加热。

公开(公告)号：US20180174838A1

公开(公告)日：2018-06-21

申请号：US15833685

申请日：2017-12-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Hiraku ISHIKAWA ,  Yoshimasa WATANABE ,  Syuhei YONEZAWA

IPC: H01L21/033 ,  H01L21/311 ,  H01J37/32 ,  C23C16/511 ,  C23C16/38 ,  C23C16/46 ,  C23C16/44

CPC classification number: H01L21/0332 ,  C23C16/38 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/5096 ,  C23C16/511 ,  H01J37/32201 ,  H01J37/32229 ,  H01J37/32449 ,  H01J2237/182 ,  H01J2237/3321 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/11551 ,  H01L27/11578

Abstract: There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).

公开(公告)号：US20230197447A1

公开(公告)日：2023-06-22

申请号：US18084908

申请日：2022-12-20

Applicant: Tokyo Electron Limited

Inventor： Kota UMEZAWA ,  Yoshimasa WATANABE

IPC: H01L21/02 ,  H01L21/3065 ,  C23C16/24 ,  C23C16/56 ,  C30B1/02 ,  C30B29/06

CPC classification number: H01L21/02675 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/3065 ,  C23C16/24 ,  C23C16/56 ,  C30B1/023 ,  C30B29/06

Abstract: A method of forming a crystalline silicon film includes forming a first amorphous silicon film on a substrate, forming a crystal nucleation film in which crystal nuclei of silicon are formed by performing a first annealing on the substrate having the first amorphous silicon film formed thereon, performing etching with an etching gas, forming a second amorphous silicon film on the crystal nuclei remaining after the etching, and forming a crystalline silicon film by performing a second annealing on the substrate after the forming of the second amorphous silicon film to grow the crystal nuclei.

公开(公告)号：US20210090888A1

公开(公告)日：2021-03-25

申请号：US17041767

申请日：2019-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Jinwang LI ,  Masahiro OKA ,  Yoshimasa WATANABE ,  Yuuki YAMAMOTO ,  Hiroyuki IKUTA

IPC: H01L21/033 ,  H01L21/02 ,  C23C16/02 ,  C23C16/50 ,  C23C16/455 ,  C23C16/28

Abstract: A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.

公开(公告)号：US20190244838A1

公开(公告)日：2019-08-08

申请号：US16263236

申请日：2019-01-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshimasa WATANABE ,  Masahiro OKA ,  Hirokazu UEDA ,  Yuuki YAMAMOTO

IPC: H01L21/67 ,  H01L21/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/40 ,  C23C16/511

CPC classification number: H01L21/67063 ,  C23C16/0236 ,  C23C16/401 ,  C23C16/455 ,  C23C16/511 ,  H01L21/02129 ,  H01L21/02274

Abstract: A method of forming a boron-based film includes forming the boron-based film mainly containing boron on a substrate by plasma CVD using plasma of a processing gas including a boron-containing gas; and controlling film stress of the formed boron-based film by adjusting a process parameter.