公开(公告)号：US20190302536A1

公开(公告)日：2019-10-03

申请号：US16464864

申请日：2017-10-31

Applicant: TORAY ENGINEERING CO., LTD.

Inventor： Takuya ONJI ,  Masaki MORI

IPC: G02F1/1335

Abstract: A light conversion member includes a light conversion film, a first gas barrier, and a first base material. The light conversion film converts color of light from a specific color. The first gas barrier is located on a side of the light conversion film where the light to be converted is incident. The first gas barrier includes one or more gas barrier layers that prevent moisture and gas from entering the light conversion film. The first base material is located on an opposite side of the first gas barrier from a face on which the light conversion film is located. The first base material transmits the light and holds the light conversion film and the first gas barrier. For a light of the specific color, a light transmittance of the first base material combined with the first gas barrier is higher than a light transmittance of the first base material alone.

公开(公告)号：US20180108821A1

公开(公告)日：2018-04-19

申请号：US15562024

申请日：2016-03-23

Applicant: TORAY ENGINEERING CO., LTD.

Inventor： Takayoshi FUJIMOTO ,  Masamichi YAMASHITA ,  Masaki MORI ,  Yutaka OKA

IPC: H01L33/60 ,  H01L33/52 ,  H01L33/62

CPC classification number: H01L33/60 ,  H01L33/44 ,  H01L33/52 ,  H01L33/54 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

Abstract: In an LED module, modes to solve such a problem that a loss in the output of light discharged into the atmosphere occurs are embodied. Specifically, in an LED module in which an LED chip is sealed with a sealing resin, a surface of the sealing resin is covered with a thin film, the thin film is made of a material having a smaller linear expansion coefficient than the sealing resin, and an irregular surface is provided on a surface of the thin film such that light from the LED chip is multiply reflected.

公开(公告)号：US20170283951A1

公开(公告)日：2017-10-05

申请号：US15510845

申请日：2015-10-29

Applicant: TORAY ENGINEERING CO., LTD.

Inventor： Masamichi YAMASHITA ,  Takayoshi FUJIMOTO ,  Masaki MORI

IPC: C23C16/50

Abstract: A method for forming a sealing film, in which a buffer layer and a barrier layer whose density is higher than that of the buffer layer are alternately formed on a substrate, includes forming a first buffer layer on a surface of the substrate, forming a first barrier layer on a surface of the first buffer layer, and forming a second buffer layer on a surface of the first barrier layer. A ratio of a thickness of a portion of the first buffer layer in a thickness direction of the substrate relative to a thickness of a portion of the first buffer layer in an inclined direction that is inclined with respect to the thickness direction is closer to 1 than a ratio of a thickness of a portion of the second buffer layer in the thickness direction relative to a thickness of a portion of the second buffer layer in the inclined direction.

公开(公告)号：US20220384657A1

公开(公告)日：2022-12-01

申请号：US17884276

申请日：2022-08-09

Applicant: NIKON CORPORATION ,  TORAY ENGINEERING CO., LTD.

Inventor： Makoto NAKAZUMI ,  Tsukasa KISHIUME ,  Masaki MORI ,  Takayoshi FUJIMOTO

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02

Abstract: What is provided is a transistor including a gate electrode, a gate insulating film, a semiconductor film, a source electrode, and a drain electrode, in which the gate insulating film is a laminated film in which a SiOx film and a SiCyNz film are alternately formed, the total number of films constituting the laminated film is 3 or more and 18 or less, and the thickness of each film constituting the laminated film is 25 nm or more and 150 nm or less.

公开(公告)号：US20180272462A1

公开(公告)日：2018-09-27

申请号：US15757156

申请日：2016-09-08

Applicant: TORAY ENGINEERING CO., LTD.

Inventor： Masaki MORI

IPC: B23K20/10 ,  H01R4/68 ,  H01L39/02 ,  B21F15/02

CPC classification number: B23K20/103 ,  B21F15/02 ,  B21K25/00 ,  B23K20/10 ,  B23K20/233 ,  B23K2101/32 ,  B23K2101/38 ,  B23K2103/08 ,  H01L39/02 ,  H01R4/68 ,  H01R43/0207

Abstract: A superconducting wire joining method joins superconducting wires each having a superconducting layer and a stabilizing layer that contacts with the superconducting layer to cover the superconducting layer. The superconducting wire joining method includes overlapping the superconducting wires such that the stabilizing layers of the superconducting wires face each other, and performing ultrasonic joining relative to overlapped portions of the superconducting wires. The overlapping of the superconducting wires and the performing of the ultrasonic joining are performed at room temperature.