公开(公告)号：US20180005854A1

公开(公告)日：2018-01-04

申请号：US15708171

申请日：2017-09-19

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Hiroaki YAMADA ,  Yoshihiro OGAWA ,  Takeshi HIZAWA

IPC: H01L21/67 ,  C23F1/26 ,  B08B3/14 ,  H01L21/66 ,  H01L21/311

CPC classification number: H01L21/67086 ,  B08B3/14 ,  B81C2201/0138 ,  C23F1/26 ,  H01L21/31111 ,  H01L22/10 ,  Y10T137/0318

Abstract: A chemical liquid treatment apparatus includes processing chambers; a chemical liquid feeding unit configured to cyclically feed a chemical liquid into the processing chambers; and a modifying unit. The modifying unit, when using a chemical liquid in which an effect thereof varies with a chemical liquid discharge time, is configured to calculate a variation of the effect of the chemical liquid based on the chemical liquid discharge time and is configured to modify the chemical liquid discharge time for each of the processing chambers based on the calculated variation of the effect of the chemical liquid and a cumulative time of the chemical liquid discharge time.

公开(公告)号：US20200090960A1

公开(公告)日：2020-03-19

申请号：US16294978

申请日：2019-03-07

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke MURAKI ,  Hiroaki YAMADA ,  Yuji HASHIMOTO

IPC: H01L21/67 ,  H01L21/306

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a liquid supplier configured to supply liquid to a film on a substrate and cause a substance to dissolve from the film in the liquid. The apparatus further includes a first channel configured to recover the liquid supplied to the film and feed the liquid again to the liquid supplier, and a second channel configured to drain the liquid supplied to the film. The apparatus further includes a first switching module configured to switch a discharge destination of the liquid supplied to the film between the first and second channels, and a second switching module configured to switch between supplementing and not supplementing the first channel with new liquid. The apparatus further includes a controller configured to control the first and second switching modules to adjust concentration of the substance in the liquid to be supplied to the film.

公开(公告)号：US20180277407A1

公开(公告)日：2018-09-27

申请号：US15989887

申请日：2018-05-25

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke MURAKI ,  Hiroaki YAMADA ,  Yuya AKEBOSHI ,  Katsuhiro SATO

IPC: H01L21/67 ,  C23F1/16 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/28

CPC classification number: H01L21/67242 ,  C23F1/16 ,  C23F1/26 ,  H01L21/28 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/67057 ,  H01L21/67075 ,  H01L21/67086

Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

公开(公告)号：US20180082869A1

公开(公告)日：2018-03-22

申请号：US15449308

申请日：2017-03-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke MURAKI ,  Hiroaki YAMADA ,  Yuya AKEBOSHI ,  Katsuhiro SATO

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/28 ,  C23F1/16

CPC classification number: H01L21/67242 ,  C23F1/16 ,  C23F1/26 ,  H01L21/28 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/67057 ,  H01L21/67075 ,  H01L21/67086

Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.