ELECTROSTATIC CHUCK
    1.
    发明申请
    ELECTROSTATIC CHUCK 审中-公开

    公开(公告)号:US20170178944A1

    公开(公告)日:2017-06-22

    申请号:US15452330

    申请日:2017-03-07

    Applicant: TOTO LTD.

    Abstract: An electrostatic chuck includes: a ceramic dielectric substrate having a first major surface, a second major surface, and a through-hole; a metallic base plate which has a gas introduction path that communicates with the through-hole; and a bonding layer which is provided between the ceramic dielectric substrate and the base plate and includes a resin material. The bonding layer has a space which is provided between an opening of the through-hole in the second major surface and the gas introduction path and is larger than the opening in a horizontal direction, and a first area in which an end face of the bonding layer on a side of the space intersects with the second major surface being recessed from the opening further than a second area of the end face which is different from the first area.

    STRUCTURAL MEMBER
    2.
    发明申请

    公开(公告)号:US20250079130A1

    公开(公告)日:2025-03-06

    申请号:US18816038

    申请日:2024-08-27

    Applicant: TOTO LTD.

    Abstract: A structural member 10 includes a base material 100 and a protective film 200 covering a surface 110 of the base material 100. A particle 300 that is harder than the protective film 200 is dispersedly arranged inside the protective film 200.

    STRUCTURAL MEMBER AND METHOD FOR PRODUCING THE SAME

    公开(公告)号:US20240293841A1

    公开(公告)日:2024-09-05

    申请号:US18591327

    申请日:2024-02-29

    Applicant: TOTO LTD.

    CPC classification number: B05D1/02 B05D3/007

    Abstract: A structural member 10 includes a base material 100 and a protective film 200 formed by depositing a material while applying an impact force to a surface 110 of the base material 100. Provided that an index indicating a degree of a local denseness of the protective film 200 is defined as a denseness index, the value of the denseness index at a first portion that is a portion of the protective film 200 including an outer surface 210 thereof is 50% or more of the value of the denseness index at a second portion that is a portion of the protective film 200 closer to a base material 100 side thereof than the first portion.

    SEMICONDUCTOR MANUFACTURING APPARATUS MEMBER AND SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20220341018A1

    公开(公告)日:2022-10-27

    申请号:US17701831

    申请日:2022-03-23

    Applicant: TOTO LTD.

    Abstract: According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a base material and a ceramic layer located on the base material. The base material includes a first surface, a second surface, and at least one hole extending through the first and second surfaces. The at least one hole includes a first, a second and a third hole part. The first hole part is continuous with the first surface and is oblique. The second hole part is between the second surface and the first hole part. The third hole part is between the first hole part and the second hole part and is oblique. The ceramic layer includes a first part located on the first surface and a second part located on the first hole part.

    SEMICONDUCTOR MANUFACTURING APPARATUS MEMBER AND SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20220351945A1

    公开(公告)日:2022-11-03

    申请号:US17701844

    申请日:2022-03-23

    Applicant: TOTO LTD.

    Abstract: According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a composite structure. The composite structure includes a base material and a ceramic layer. The ceramic layer includes a first part located on a surface of the base material and is exposed. The composite structure includes a through-hole extending through the base material and the ceramic layer. The through-hole extends in a first direction. The through-hole includes a first hole region, a second hole region and a third hole region. The first hole region is continuous with a surface of the first part. The third hole region is positioned between the first hole region and the second hole region in the first direction. A hardness of the third hole region is greater than a hardness of the first hole region.

    SEMICONDUCTOR MANUFACTURING APPARATUS MEMBER AND SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20220351944A1

    公开(公告)日:2022-11-03

    申请号:US17701813

    申请日:2022-03-23

    Applicant: TOTO LTD.

    Abstract: According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a base material and a ceramic layer. The base material includes a first surface, a second surface at a side opposite to the first surface, and at least one hole extending through the first and second surfaces. The ceramic layer is a ceramic layer located on the base material. The at least one hole includes a first hole part continuous with the first surface. The ceramic layer includes a first part and a second part. The first part is located on the first surface. The first part is exposed. The second part is located on the first hole part. An arithmetical mean height Sa of a surface of the first part is less than an arithmetical mean height Sa of a surface of the second part.

    SEMICONDUCTOR MANUFACTURING APPARATUS MEMBER AND SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20220344125A1

    公开(公告)日:2022-10-27

    申请号:US17701855

    申请日:2022-03-23

    Applicant: TOTO LTD.

    Abstract: According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a base material and a ceramic layer. The base material includes a first surface, a second surface, and at least one hole. The at least one hole extends through the first and second surfaces. The ceramic layer is located on the first surface. The at least one hole includes an oblique surface and a perpendicular surface. The oblique surface is continuous with the first surface and is oblique to a first direction from the first surface toward the second surface. The perpendicular surface is positioned between the second surface and the oblique surface in the first direction and extends along the first direction. An angle between the first surface and the oblique surface is greater than an angle between the perpendicular surface and the oblique surface.

    STRUCTURAL MEMBER
    8.
    发明申请

    公开(公告)号:US20250079131A1

    公开(公告)日:2025-03-06

    申请号:US18819886

    申请日:2024-08-29

    Applicant: TOTO LTD.

    Abstract: A structural member 10 includes a base material 100 and a protective film 200 covering a surface 101 of the base material 100. At least a portion of the protective film 200 in the vicinity of a surface 201 thereof has a first layer 210 and a second layer 220 that contains all of elements contained in the first layer 210 and that is different from the first layer 210 in composition ratio of each element, wherein the first layer 210 and the second layer 220 are alternately aligned along a depth direction perpendicular to the surface 201 of the protective film 200.

    STRUCTURAL MEMBER
    10.
    发明申请

    公开(公告)号:US20250074836A1

    公开(公告)日:2025-03-06

    申请号:US18806228

    申请日:2024-08-15

    Applicant: TOTO LTD.

    Abstract: A structural member 10 includes a base material 100 which is a ceramic, an underlayer 200 covering a surface S1 of the base material 100, and a protective film 300 covering a surface S2 of the underlayer 200. An orientation of each crystallite 210 on a surface S2 of the underlayer 200 on the protective film 300 side is not aligned and is irregular.

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