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    METHOD OF MAKING A SEMICONDUCTOR MANUFACTURING APPARATUS MEMBER
    1.
    发明申请
    METHOD OF MAKING A SEMICONDUCTOR MANUFACTURING APPARATUS MEMBER 有权

    公开(公告)号：US20220139676A1

    公开(公告)日：2022-05-05

    申请号：US17533579

    申请日：2021-11-23

    Applicant: TOTO LTD.

    Inventor： Yasutaka NITTA ,  Takuma WADA

    IPC: H01J37/32 ,  H01L21/67

    Abstract: A method of making a semiconductor manufacturing apparatus member includes a step of preparing an aluminum base having an alumite layer having a porous columnar structure at an upper surface thereof. The alumite layer is an anodic oxidation film, and a Young's modulus of the alumite layer is between 90 GPa and 120 GPa. The method also includes a step of forming a particle-resistant layer on the alumite layer by aerosol deposition, in which an aerosol containing fine particles of a brittle material dispersed in a gas is ejected from a nozzle to impact against a surface of the alumite layer, wherein the particle-resistant layer includes a polycrystalline ceramic; and wherein, when the resulting semiconductor manufacturing apparatus member is exposed to a plasma in a reference plasma resistance test, the particle-resistant layer has an arithmetic average height Sa of 0.060 or less after the reference plasma test is completed.

    STRUCTURAL MEMBER AND METHOD FOR PRODUCING THE SAME
    2.
    发明公开
    STRUCTURAL MEMBER AND METHOD FOR PRODUCING THE SAME 审中-公开

    公开(公告)号：US20240293841A1

    公开(公告)日：2024-09-05

    申请号：US18591327

    申请日：2024-02-29

    Applicant: TOTO LTD.

    Inventor： Yasutaka NITTA ,  Tatsuya KOGA

    IPC: B05D1/02 ,  B05D3/00

    CPC classification number: B05D1/02 ,  B05D3/007

    Abstract: A structural member 10 includes a base material 100 and a protective film 200 formed by depositing a material while applying an impact force to a surface 110 of the base material 100. Provided that an index indicating a degree of a local denseness of the protective film 200 is defined as a denseness index, the value of the denseness index at a first portion that is a portion of the protective film 200 including an outer surface 210 thereof is 50% or more of the value of the denseness index at a second portion that is a portion of the protective film 200 closer to a base material 100 side thereof than the first portion.

    STRUCTURAL MEMBER
    4.
    发明申请
    STRUCTURAL MEMBER 有权

    公开(公告)号：US20250079131A1

    公开(公告)日：2025-03-06

    申请号：US18819886

    申请日：2024-08-29

    Applicant: TOTO LTD.

    Inventor： Yasutaka NITTA ,  Ryoto TAKIZAWA ,  Susumu ADACHI ,  Atsushi KINJO ,  Tatsuya KOGA

    IPC: H01J37/32

    Abstract: A structural member 10 includes a base material 100 and a protective film 200 covering a surface 101 of the base material 100. At least a portion of the protective film 200 in the vicinity of a surface 201 thereof has a first layer 210 and a second layer 220 that contains all of elements contained in the first layer 210 and that is different from the first layer 210 in composition ratio of each element, wherein the first layer 210 and the second layer 220 are alternately aligned along a depth direction perpendicular to the surface 201 of the protective film 200.

    STRUCTURAL MEMBER
    5.
    发明申请
    STRUCTURAL MEMBER 有权

    公开(公告)号：US20250074836A1

    公开(公告)日：2025-03-06

    申请号：US18806228

    申请日：2024-08-15

    Applicant: TOTO LTD.

    Inventor： Tatsuya KOGA ,  Nobutomo OTSUKA ,  Yasutaka NITTA

    IPC: C04B41/45 ,  C04B41/52

    Abstract: A structural member 10 includes a base material 100 which is a ceramic, an underlayer 200 covering a surface S1 of the base material 100, and a protective film 300 covering a surface S2 of the underlayer 200. An orientation of each crystallite 210 on a surface S2 of the underlayer 200 on the protective film 300 side is not aligned and is irregular.

    SEMICONDUCTOR MANUFACTURING APPARATUS
    6.
    发明公开
    SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开

    公开(公告)号：US20240331982A1

    公开(公告)日：2024-10-03

    申请号：US18738213

    申请日：2024-06-10

    Applicant: TOTO LTD.

    Inventor： Yasutaka NITTA ,  Takuma WADA ,  Ryoto TAKIZAWA

    IPC: H01J37/32 ,  C23C16/458 ,  H01L21/67 ,  H01L21/683

    CPC classification number: H01J37/32477 ,  C23C16/4583 ,  H01J37/32715 ,  H01L21/67011 ,  H01L21/6831 ,  H01J2237/2007

    Abstract: According to one embodiment, a semiconductor manufacturing apparatus member includes a base and a particle-resistant layer. The base includes a first surface, a second surface crossing the first surface, and an edge portion connecting the first surface and the second surface. The particle-resistant layer includes a polycrystalline ceramic and covering the first surface, the second surface, and the edge portion. The particle-resistant layer includes a first particle-resistant layer provided at the edge portion, and a second particle-resistant layer provided at the first surface. A particle resistance of the first particle-resistant layer is higher than a particle resistance of the second particle-resistant layer. A thickness of the first particle-resistant layer is thinner than a thickness of the second particle-resistant layer.

    MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE
    7.
    发明申请
    MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE 有权

    公开(公告)号：US20220028657A1

    公开(公告)日：2022-01-27

    申请号：US17499256

    申请日：2021-10-12

    Applicant: TOTO LTD.

    Inventor： Yasutaka NITTA

    IPC: H01J37/32

    Abstract: A member for a semiconductor manufacturing device includes an alumite base material including a concavity and a first layer formed on the alumite base material and including an yttrium compound. The first layer includes an outer surface, a first region on a side of the outer surface, and a second region provided in the concavity and located between the first region and the alumite base material. The concavity includes first and second portions respectively provided with the first and second regions. A width of the second portion is narrower than a width of the first portion in a cross section along a stacking direction and a boundary of the first layer in the concavity and the alumite base material being curved convex toward the outer surface of the first layer.

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