公开(公告)号：US11142829B2

公开(公告)日：2021-10-12

申请号：US16802180

申请日：2020-02-26

Applicant: TOTO LTD.

Inventor： Yasutaka Nitta ,  Takuma Wada

IPC: H01L21/67 ,  C23C28/04 ,  H01J37/32 ,  C23C30/00

Abstract: According to one embodiment, a semiconductor manufacturing apparatus member includes a base and a particle-resistant layer. The base includes a main portion and an alumite layer. The main portion includes aluminum. The alumite layer is provided at a front surface of the main portion. The particle-resistant layer is provided on the alumite layer and includes a polycrystalline ceramic. An Al purity of the main portion is 99.00% or more.

公开(公告)号：US20190027343A1

公开(公告)日：2019-01-24

申请号：US16127923

申请日：2018-09-11

Applicant: TOTO LTD.

Inventor： Yasutaka Nitta

IPC: H01J37/32

Abstract: According to one embodiment, a member for a semiconductor manufacturing device includes an alumite base material including a concavity, and a first layer formed on the alumite base material and including an yttrium compound. The first layer includes a first region, and a second region provided in the concavity and located between the first region and the alumite base material. An average particle diameter in the first region is shorter than an average particle diameter in the second region.

公开(公告)号：US12051568B2

公开(公告)日：2024-07-30

申请号：US16802666

申请日：2020-02-27

Applicant: TOTO LTD.

Inventor： Yasutaka Nitta ,  Takuma Wada ,  Ryoto Takizawa

IPC: H01J37/32 ,  C23C16/458 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32477 ,  C23C16/4583 ,  H01J37/32715 ,  H01L21/67011 ,  H01L21/6831 ,  H01J2237/2007

Abstract: According to one embodiment, a semiconductor manufacturing apparatus member includes a base and a particle-resistant layer. The base includes a first surface, a second surface crossing the first surface, and an edge portion connecting the first surface and the second surface. The particle-resistant layer includes a polycrystalline ceramic and covering the first surface, the second surface, and the edge portion. The particle-resistant layer includes a first particle-resistant layer provided at the edge portion, and a second particle-resistant layer provided at the first surface. A particle resistance of the first particle-resistant layer is higher than a particle resistance of the second particle-resistant layer.

公开(公告)号：US11939678B2

公开(公告)日：2024-03-26

申请号：US17533579

申请日：2021-11-23

Applicant: TOTO LTD.

Inventor： Yasutaka Nitta ,  Takuma Wada

IPC: C23C24/04 ,  H01J37/32 ,  C23C16/44 ,  H01L21/687

CPC classification number: C23C24/04 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32715 ,  C23C16/4404 ,  H01J2237/2007 ,  H01J2237/3341 ,  H01L21/68757

Abstract: A method of making a semiconductor manufacturing apparatus member includes a step of preparing an aluminum base having an alumite layer having a porous columnar structure at an upper surface thereof. The alumite layer is an anodic oxidation film, and a Young's modulus of the alumite layer is between 90 GPa and 120 GPa. The method also includes a step of forming a particle-resistant layer on the alumite layer by aerosol deposition, in which an aerosol containing fine particles of a brittle material dispersed in a gas is ejected from a nozzle to impact against a surface of the alumite layer, wherein the particle-resistant layer includes a polycrystalline ceramic; and wherein, when the resulting semiconductor manufacturing apparatus member is exposed to a plasma in a reference plasma resistance test, the particle-resistant layer has an arithmetic average height Sa of 0.060 or less after the reference plasma test is completed.

公开(公告)号：US11295934B2

公开(公告)日：2022-04-05

申请号：US16127923

申请日：2018-09-11

Applicant: TOTO LTD.

Inventor： Yasutaka Nitta

IPC: H01J37/32 ,  C23C24/04

Abstract: According to one embodiment, a member for a semiconductor manufacturing device includes an alumite base material including a concavity, and a first layer formed on the alumite base material and including an yttrium compound. The first layer includes a first region, and a second region provided in the concavity and located between the first region and the alumite base material. An average particle diameter in the first region is shorter than an average particle diameter in the second region.