公开(公告)号：US12051568B2

公开(公告)日：2024-07-30

申请号：US16802666

申请日：2020-02-27

Applicant: TOTO LTD.

Inventor： Yasutaka Nitta ,  Takuma Wada ,  Ryoto Takizawa

IPC: H01J37/32 ,  C23C16/458 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32477 ,  C23C16/4583 ,  H01J37/32715 ,  H01L21/67011 ,  H01L21/6831 ,  H01J2237/2007

Abstract: According to one embodiment, a semiconductor manufacturing apparatus member includes a base and a particle-resistant layer. The base includes a first surface, a second surface crossing the first surface, and an edge portion connecting the first surface and the second surface. The particle-resistant layer includes a polycrystalline ceramic and covering the first surface, the second surface, and the edge portion. The particle-resistant layer includes a first particle-resistant layer provided at the edge portion, and a second particle-resistant layer provided at the first surface. A particle resistance of the first particle-resistant layer is higher than a particle resistance of the second particle-resistant layer.

公开(公告)号：US10759710B2

公开(公告)日：2020-09-01

申请号：US16296934

申请日：2019-03-08

Applicant: TOTO LTD.

Inventor： Junichi Iwasawa ,  Hiroaki Ashizawa ,  Takuma Wada ,  Ryoto Takizawa ,  Toshihiro Aoshima ,  Yuuki Takahashi ,  Atsushi Kinjo

IPC: B32B9/00 ,  C04B35/505 ,  C01B11/24 ,  C01F7/02 ,  C01G25/02 ,  C04B35/622 ,  H01J37/28 ,  H01L21/67 ,  H01L21/687 ,  C01F17/206 ,  C01F17/265

Abstract: Disclosed is provision of a ceramic coat having an excellent low-particle generation as well as a method for assessing the low-particle generation of the ceramic coat. A composite structure including a substrate and a structure which is formed on the substrate and has a surface, wherein the structure includes a polycrystalline ceramic and the composite structure has luminance Sa satisfying a specific value calculated from a TEM image analysis thereof, can be suitably used as an inner member of a semiconductor manufacturing apparatus required to have a low-particle generation.

公开(公告)号：US12112924B2

公开(公告)日：2024-10-08

申请号：US17244299

申请日：2021-04-29

Applicant: TOTO LTD.

Inventor： Hiroaki Ashizawa ,  Ryoto Takizawa

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32504 ,  H01J37/32495 ,  H01L21/67069 ,  H01J37/321 ,  H01J2237/3341

Abstract: Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus as well as a semiconductor manufacturing apparatus. A composite structure including a base material and a structure that is provided on the base material and has a surface to be exposed to a plasma atmosphere, in which the structure has an yttrium-aluminum oxide as a main component, and has a lattice constant a calculated by the following formula (1) being larger than 12.080 Å:

a=d·(h2+k2+l2)1/2  (1)

where d represents a lattice plane spacing, and (hkl) represents a Miller index. This structure features excellent low-particle generation and is suitably used a member for a semiconductor apparatus.

公开(公告)号：US11802085B2

公开(公告)日：2023-10-31

申请号：US17244247

申请日：2021-04-29

Applicant: TOTO LTD.

Inventor： Hiroaki Ashizawa ,  Ryoto Takizawa

IPC: C04B35/44 ,  B82Y40/00 ,  H01J37/32 ,  B82Y30/00

CPC classification number: C04B35/44 ,  B82Y30/00 ,  B82Y40/00 ,  H01J37/32467 ,  H01J2237/3341

Abstract: Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus with which low-particle generation can be improved, as well as a semiconductor manufacturing apparatus including the same. A composite structure including a base material and a structure that is provided on the base material and has a surface, in which the structure comprises Y3Al5O12 as a main component, and has an indentation hardness being larger than 8.5 GPa features excellent low-particle generation and is suitably used as a member for a semiconductor apparatus.