公开(公告)号：US20160214088A1

公开(公告)日：2016-07-28

申请号：US15007477

申请日：2016-01-27

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA ,  NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY

发明人： Shogo SHIRAKAWA ,  Hirohito HIRATA ,  Tatsuya MIYAZAKI ,  Megumi YANAGIDA ,  Tsukasa TORIMOTO

IPC分类号： B01J23/652 ,  B01J37/02 ,  B01J37/34

CPC分类号： B01J23/6527 ,  B01D53/9404 ,  B01D2255/102 ,  B01D2255/2065 ,  B01D2255/20707 ,  B01D2255/20715 ,  B01D2255/20776 ,  B01D2255/2092 ,  B01D2255/30 ,  B01D2255/407 ,  B01J31/0277 ,  B01J31/0284 ,  B01J35/006 ,  B01J37/0018 ,  B01J37/0219 ,  B01J37/06 ,  B01J37/347

摘要： The present invention relates to an exhaust gas purification catalyst that can homogeneously inhibit growth of a plurality of the fine particles at high temperature, and prevent lowering in catalytic activity, as well as a method for producing it. The exhaust gas purification catalyst of the present invention has fine composite metal particles containing a platinum-group metal and tungsten. Moreover, in the exhaust gas purification catalyst of the present invention, when the fine composite metal particles in the exhaust gas purification catalyst have been analyzed by STEM-EDX, the tungsten content of at least 80% of the fine composite metal particles based on number, is in the range of 10% to 350% of the mean content of tungsten in a plurality of the fine composite metal particles.

摘要翻译： 本发明涉及一种排气净化催化剂及其制造方法，其能够均匀地抑制高温下多种微粒的生长，并且能够防止催化活性的降低。 本发明的排气净化催化剂具有含有铂族金属和钨的复合金属微粒。 此外，在本发明的排气净化催化剂中，当通过STEM-EDX分析废气净化催化剂中的微细复合金属粒子时，基于数量的复合金属微粒的至少80％的钨含量 在多个复合金属微粒中的钨的平均含量的10〜350％的范围。

公开(公告)号：US20200308483A1

公开(公告)日：2020-10-01

申请号：US16900980

申请日：2020-06-14

申请人： NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY ,  NICHIA CORPORATION

发明人： Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Akihiro FUKATSU ,  Daisuke OYAMATSU

IPC分类号： C09K11/62 ,  C01G15/00 ,  H01L33/50

摘要： A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.

公开(公告)号：US20190153310A1

公开(公告)日：2019-05-23

申请号：US16260767

申请日：2019-01-29

申请人： NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY ,  NICHIA CORPORATION

发明人： Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Akihiro FUKATSU ,  Daisuke OYAMATSU

IPC分类号： C09K11/62 ,  H01L33/50 ,  C01G15/00

CPC分类号： C09K11/621 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01G15/006 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2004/84 ,  H01L33/502 ,  H01L33/504 ,  Y10S977/773 ,  Y10S977/813 ,  Y10S977/896 ,  Y10S977/95

摘要： A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.

公开(公告)号：US20170022413A1

公开(公告)日：2017-01-26

申请号：US15215961

申请日：2016-07-21

申请人： NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY ,  NICHIA CORPORATION

发明人： Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Akihiro FUKATSU ,  Daisuke OYAMATSU

IPC分类号： C09K11/62 ,  H01L33/04 ,  H01L33/50 ,  C01G15/00

CPC分类号： C09K11/621 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01G15/006 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2004/84 ,  H01L33/502 ,  H01L33/504 ,  Y10S977/773 ,  Y10S977/813 ,  Y10S977/896 ,  Y10S977/95

摘要： A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.

摘要翻译： 提供了制造半导体纳米颗粒的方法。 该方法包括在温度设定在100℃至300℃范围内的温度下将初级半导体纳米颗粒和元素M1的盐加热到溶剂中。初级半导体纳米颗粒含有元素M1，元素M2，任选的元素 M3，元素Z，平均粒径为50nm以下。 元素M1是选自由Ag，Cu和Au组成的组中的至少一种元素。 元素M2是选自Al，Ga，In和Tl中的至少一种元素。 元素M3是选自Zn和Cd中的至少一种元素。 元素Z是选自S，Se和Te中的至少一种元素。

公开(公告)号：US20170002265A1

公开(公告)日：2017-01-05

申请号：US15200528

申请日：2016-07-01

申请人： NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY ,  NICHIA CORPORATION

发明人： Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Yujiro ISHIGAMI ,  Kouta SUGIURA ,  Daisuke OYAMATSU

IPC分类号： C09K11/88 ,  H01L33/50 ,  C01B19/00

CPC分类号： C09K11/881 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/007 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2002/77 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/64 ,  C01P2004/80 ,  H01L33/502 ,  Y10S977/762 ,  Y10S977/896 ,  Y10S977/95

摘要： Tellurium compound nanoparticles, including: an element M1 where M1 is at least one element selected from Cu, Ag, and Au; an element M2 where M2 is at least one element selected from B, Al, Ga, and In; Te; and optionally an element M3 where M3 is at least one element selected from Zn, Cd, and Hg; wherein a crystal structure of the tellurium compound nanoparticles is a hexagonal system, the tellurium compound nanoparticles are of a rod shape and have an average short-axis length of 5.5 nm or less, and when irradiated with light at a wavelength in a range of 350 nm to 1,000 nm, the tellurium compound nanoparticles emit photoluminescence having a wavelength longer than the wavelength of the irradiation light.

摘要翻译： 碲化合物纳米颗粒，包括：元素M1，其中M1是选自Cu，Ag和Au中的至少一种元素; M2是选自B，Al，Ga和In中的至少一种元素的元素M2; Te 和任选的元素M3，其中M3是选自Zn，Cd和Hg中的至少一种元素; 其中，所述碲化合物纳米粒子的晶体结构为六方晶系，所述碲化合物纳米粒子为棒状，平均短轴长度为5.5nm以下，并且当以350nm以下的波长的光照射时 nm至1000nm，碲化合物纳米粒子发射波长比照射光的波长长的光致发光。

公开(公告)号：US20200140750A1

公开(公告)日：2020-05-07

申请号：US16717105

申请日：2019-12-17

申请人： NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY ,  OSAKA UNIVERSITY ,  NICHIA CORPORATION

发明人： Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Marino KISHI ,  Susumu KUWABATA ,  Taro UEMATSU ,  Daisuke OYAMATSU

IPC分类号： C09K11/62 ,  H01L33/50

摘要： A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.

公开(公告)号：US20170267924A1

公开(公告)日：2017-09-21

申请号：US15459767

申请日：2017-03-15

申请人： OSAKA UNIVERSITY ,  NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY ,  NICHIA CORPORATION

发明人： Susumu KUWABATA ,  Taro UEMATSU ,  Kazutaka WAJIMA ,  Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Daisuke OYAMATSU ,  Kenta NIKI

IPC分类号： C09K11/62 ,  H01L33/50 ,  G02F1/1335 ,  B01J13/02

CPC分类号： C09K11/621 ,  B01J13/02 ,  B82Y30/00 ,  B82Y40/00 ,  C09B67/0097 ,  C09K11/02 ,  G02F1/133617 ,  G02F2001/133614 ,  H01L33/502 ,  Y10S977/774 ,  Y10S977/813 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95

摘要： A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

公开(公告)号：US20140284528A1

公开(公告)日：2014-09-25

申请号：US14056329

申请日：2013-10-17

申请人： NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY

发明人： Hiroshi YUKAWA ,  Hiroyasu NISHI ,  Tsukasa TORIMOTO ,  Yoshinobu BABA

IPC分类号： G01N21/64

CPC分类号： G01N21/643 ,  B82Y15/00 ,  C09K11/54 ,  G01N33/582 ,  H01B1/10

摘要： Semiconductor nanoparticles of the present invention are particles each having a core-shell structure that includes a core and a shell surrounding the core. The core includes (AgIn)xZn2(1−x)S2 (0.4≦x≦0.95 holds). The shell includes ZnS or ZnO, and the semiconductor nanoparticles each have at least one hydrophilic functional group on a surface of the shell. As the hydrophilic functional group, for example, a carboxyl group or a sulfo group may be mentioned. Since having a low toxicity and a high emission quantum yield, the semiconductor nanoparticles as described above may be used for a fluorescent probe for biological labeling.

摘要翻译： 本发明的半导体纳米颗粒是各自具有核 - 壳结构的颗粒，其包括芯和围绕芯的壳。 核心包括（AgIn）xZn2（1-x）S2（0.4＆nlE; x＆nlE; 0.95成立）。 壳包括ZnS或ZnO，并且半导体纳米颗粒在壳的表面上具有至少一个亲水性官能团。 作为亲水性官能团，可以举出例如羧基或磺基。 由于具有低毒性和高发射量子产率，因此上述半导体纳米颗粒可用于生物标记的荧光探针。

公开(公告)号：US20210062083A1

公开(公告)日：2021-03-04

申请号：US17097516

申请日：2020-11-13

申请人： NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY ,  OSAKA UNIVERSITY ,  NICHIA CORPORATION

发明人： Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Marino KISHI ,  Susumu KUWABATA ,  Taro UEMATSU ,  Daisuke OYAMATSU

IPC分类号： C09K11/62 ,  H01L33/50

摘要： Provided is a ternary or quaternary semiconductor nanoparticle that enables the band-edge emission and a less toxic composition. A semiconductor nanoparticle is provided that contains Ag, In, and S and has an average particle size of 50 nm or less, wherein the ratio of the number of atoms of Ag to the total number of atoms of Ag and In is 0.320 or more and 0.385 or less, the ratio of the number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less. The semiconductor nanoparticle is adapted to emit photoluminescence having a photoluminescence lifetime of 200 ns or less upon being irradiated with light having a wavelength in a range of 350 nm to 500 nm.

公开(公告)号：US20200295227A1

公开(公告)日：2020-09-17

申请号：US16815359

申请日：2020-03-11

申请人： NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY ,  OSAKA UNIVERSITY ,  NICHIA CORPORATION

发明人： Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Yuki MORI ,  Hiroki YAMAUCHI ,  Susumu KUWABATA ,  Taro UEMATSU ,  Daisuke OYAMATSU

IPC分类号： H01L33/06 ,  H01L33/00 ,  B82Y15/00 ,  B82Y40/00

摘要： Provided is a method for manufacturing a semiconductor nanoparticle, the method includes performing a heat treatment of a first mixture containing a silver (Ag) salt, an alkali metal salt, a salt containing at least one of indium (In) and gallium (Ga), a sulfur source, and an organic solvent. A ratio of the number of atoms of an alkali metal to the total number of atoms of Ag and the alkali metal in the first mixture is greater than 0 and less than 1.