摘要:
A direct-transfer marching memory includes an array of memory units, each of the memory units having a sequence of bit-level cells so as to store information of byte size or word size, the information of byte size or word size is transferred synchronously, step by step, along a direction orthogonal to a direction of the sequence of bit-level cells, each of the bit-level cells encompassing an electron-storage region configured to accumulate cell-electrons. The cell-electrons accumulated in an electron-storage region in a subject memory unit is directly transferred to an adjacent electron-storage region, which is assigned in the next memory unit adjacent to the subject memory unit, the transfer of the cell-electrons is directly controlled by control signals, without using a combinational function of a logic gate circuit.
摘要:
A marching memory is disclosed having an array of memory units. Each memory unit has a sequence of bit level cells. Each bit-level cell has a transfer-transistor having a first main-electrode connected to a clock signal supply line through a first delay element, and a control-electrode connected to an output terminal of a first neighboring bit-level cell positioned at an input side of the array of the memory units, through a second delay element. Each bit-level cell also has a reset-transistor having a first main-electrode connected to a second main-electrode of the transfer-transistor, a control-electrode connected to the clock signal supply line, and a second main-electrode connected to the ground potential. Each bit-level cell also has a capacitor connected in parallel with the reset-transistor.
摘要:
A marching memory is disclosed having an array of memory units. Each memory unit has a sequence of bit level cells. Each bit-level cell has a transfer-transistor having a first main-electrode connected to a clock signal supply line through a first delay element, and a control-electrode connected to an output terminal of a first neighboring bit-level cell positioned at an input side of the array of the memory units, through a second delay element. Each bit-level cell also has a reset-transistor having a first main-electrode connected to a second main-electrode of the transfer-transistor, a control-electrode connected to the clock signal supply line, and a second main-electrode connected to the ground potential. Each bit-level cell also has a capacitor connected in parallel with the reset-transistor.
摘要:
A direct-transfer marching memory includes an array of memory units, each of the memory units having a sequence of bit-level cells so as to store information of byte size or word size, the information of byte size or word size is transferred synchronously, step by step, along a direction orthogonal to a direction of the sequence of bit-level cells, each of the bit-level cells encompassing an electron-storage region configured to accumulate cell-electrons. The cell-electrons accumulated in an electron-storage region in a subject memory unit is directly transferred to an adjacent electron-storage region, which is assigned in the next memory unit adjacent to the subject memory unit, the transfer of the cell-electrons is directly controlled by control signals, without using a combinational function of a logic gate circuit.
摘要:
A computer system encompasses a processor (11) including a control unit (111) and an ALU (112) configured to execute arithmetic and logic operations synchronized with the clock signal, and a marching main memory (31), which embraces an array of memory units, configured to store information in each of memory units and to transfer synchronously with the clock signal, providing the processor (11) with the stored information actively and sequentially so that the ALU (112) can execute the arithmetic and logic operations with the stored information. The results of the processing in the ALU (112) are sent out to the marching main memory (31), but there is only one way of instructions flow from the marching main memory (31) to the processor.
摘要:
A computer system encompasses a processor (11) including a control unit (111) and an ALU (112) configured to execute arithmetic and logic operations synchronized with the clock signal, and a marching main memory (31), which embraces an array of memory units, configured to store information in each of memory units and to transfer synchronously with the clock signal, providing the processor (11) with the stored information actively and sequentially so that the ALU (112) can execute the arithmetic and logic operations with the stored information. The results of the processing in the ALU (112) are sent out to the marching main memory (31), but there is only one way of instructions flow from the marching main memory (31) to the processor.
摘要:
A marching memory is disclosed having an array of memory units. Each memory unit has a sequence of bit level cells. Each bit-level cell has a transfer-transistor having a first main-electrode connected to a clock signal supply line through a first delay element, and a control-electrode connected to an output terminal of a first neighboring bit-level cell positioned at an input side of the array of the memory units, through a second delay element. Each bit-level cell also has a reset-transistor having a first main-electrode connected to a second main-electrode of the transfer-transistor, a control-electrode connected to the clock signal supply line, and a second main-electrode connected to the ground potential. Each bit-level cell also has a capacitor connected in parallel with the reset-transistor.
摘要:
A computer system encompasses a processor (11) including a control unit (111) and an ALU (112) configured to execute arithmetic and logic operations synchronized with the clock signal, and a marching main memory (31), which embraces an array of memory units, configured to store information in each of memory units and to transfer synchronously with the clock signal, providing the processor (11) with the stored information actively and sequentially so that the ALU (112) can execute the arithmetic and logic operations with the stored information. The results of the processing in the ALU (112) are sent out to the marching main memory (31), but there is only one way of instructions flow from the marching main memory (31) to the processor.
摘要:
A marching memory is disclosed having an array of memory units. Each memory unit has a sequence of bit level cells. Each bit-level cell has a transfer-transistor having a first main-electrode connected to a clock signal supply line through a first delay element, and a control-electrode connected to an output terminal of a first neighboring bit-level cell positioned at an input side of the array of the memory units, through a second delay element. Each bit-level cell also has a reset-transistor having a first main-electrode connected to a second main-electrode of the transfer-transistor, a control-electrode connected to the clock signal supply line, and a second main-electrode connected to the ground potential. Each bit-level cell also has a capacitor connected in parallel with the reset-transistor.
摘要:
An exposure apparatus the present invention comprises: an illumination optical system configured to illuminate an illumination area on an original with light from a light source; a projection optical system configured to project a pattern of the original onto a substrate; a first stage configured to hold the original; a second stage configured to hold the substrate; and a controller configured to control driving of at least one of the first stage, the second stage, and an optical element which forms the projection optical system so as to reduce variations in imaging characteristics of the projection optical system, based on a dependence of a transmittance of the pattern on a position in the illumination area.