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    Magnetoresistive element and magnetic memory
    1.
    发明授权
    Magnetoresistive element and magnetic memory 有权
    磁阻元件和磁记忆体

    公开(公告)号：US08878317B2

    公开(公告)日：2014-11-04

    申请号：US13210678

    申请日：2011-08-16

    申请人： Tadaomi Daibou ,  Minoru Amano ,  Daisuke Saida ,  Junichi Ito ,  Yuichi Ohsawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Hiroaki Yoda

    发明人： Tadaomi Daibou ,  Minoru Amano ,  Daisuke Saida ,  Junichi Ito ,  Yuichi Ohsawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Hiroaki Yoda

    IPC分类号： H01L29/82 ,  H01L43/10 ,  H01F10/32 ,  H01L43/08 ,  H01L27/22

    CPC分类号： H01L43/02 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.

    摘要翻译： 根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是 施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    2.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20120241827A1

    公开(公告)日：2012-09-27

    申请号：US13210678

    申请日：2011-08-16

    申请人： Tadaomi DAIBOU ,  Minoru Amano ,  Daisuke Saida ,  Junichi Ito ,  Yuichi Ohsawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Hiroaki Yoda

    发明人： Tadaomi DAIBOU ,  Minoru Amano ,  Daisuke Saida ,  Junichi Ito ,  Yuichi Ohsawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Hiroaki Yoda

    IPC分类号： H01L27/22 ,  H01L43/10 ,  H01L43/02

    CPC分类号： H01L43/02 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.

    摘要翻译： 根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是 施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

    Magnetic recording element and nonvolatile memory device
    3.
    发明授权
    Magnetic recording element and nonvolatile memory device 失效
    磁记录元件和非易失性存储器件

    公开(公告)号：US08508979B2

    公开(公告)日：2013-08-13

    申请号：US13228040

    申请日：2011-09-08

    申请人： Daisuke Saida ,  Minoru Amano ,  Junichi Ito ,  Yuichi Ohsawa ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Tadaomi Daibou

    发明人： Daisuke Saida ,  Minoru Amano ,  Junichi Ito ,  Yuichi Ohsawa ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Tadaomi Daibou

    IPC分类号： G11C11/00

    CPC分类号： G11B5/66 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

    摘要： According to one embodiment, a magnetic recording element includes a stacked body. The stacked body includes a first and a second stacked unit. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit is stacked with the first stacked unit and includes third and fourth ferromagnetic layers and a second nonmagnetic layer. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers. An outer edge of the fourth ferromagnetic layer includes a portion outside an outer edge of the first stacked unit in a plane. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a rotating magnetic field to act on the second ferromagnetic layer.

    摘要翻译： 根据一个实施例，磁记录元件包括堆叠体。 堆叠体包括第一和第二堆叠单元。 第一堆叠单元包括第一和第二铁磁层和第一非磁性层。 第一非磁性层设置在第一和第二铁磁层之间。 第二堆叠单元与第一堆叠单元堆叠并且包括第三和第四铁磁层和第二非磁性层。 第四铁磁层与第三铁磁层层叠。 第二非磁性层设置在第三和第四铁磁层之间。 第四铁磁层的外边缘包括平面内第一堆叠单元的外边缘外侧的部分。 通过使自旋极化电子和旋转磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

    Magnetic element and nonvolatile memory device
    4.
    发明授权
    Magnetic element and nonvolatile memory device 失效
    磁性元件和非易失性存储器件

    公开(公告)号：US08576616B2

    公开(公告)日：2013-11-05

    申请号：US13227959

    申请日：2011-09-08

    申请人： Daisuke Saida ,  Minoru Amano ,  Junichi Ito ,  Yuichi Ohsawa ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Tadaomi Daibou

    发明人： Daisuke Saida ,  Minoru Amano ,  Junichi Ito ,  Yuichi Ohsawa ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Tadaomi Daibou

    IPC分类号： G11C11/00

    CPC分类号： G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

    摘要： According to one embodiment, a magnetic element includes first and second conductive layers, an intermediate interconnection, and first and second stacked units. The intermediate interconnection is provided between the conductive layers. The first stacked unit is provided between the first conductive layer and the interconnection, and includes first and second ferromagnetic layer and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second stacked unit is provided between the second conductive layer and the interconnection, and includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a magnetic field to act on the second ferromagnetic layer.

    摘要翻译： 根据一个实施例，磁性元件包括第一和第二导电层，中间互连以及第一和第二堆叠单元。 中间互连设置在导电层之间。 第一层叠单元设置在第一导电层和互连之间，并且包括第一和第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。 第二堆叠单元设置在第二导电层和互连之间，并且包括第三和第四铁磁层以及设置在第三和第四铁磁层之间的第二非磁性层。 通过使自旋极化电子和磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

    Magnetic recording element and nonvolatile memory device
    5.
    发明授权
    Magnetic recording element and nonvolatile memory device 有权
    磁记录元件和非易失性存储器件

    公开(公告)号：US08488375B2

    公开(公告)日：2013-07-16

    申请号：US13037592

    申请日：2011-03-01

    申请人： Daisuke Saida ,  Minoru Amano ,  Junichi Ito ,  Yuichi Ohsawa ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Shigeki Takahashi

    发明人： Daisuke Saida ,  Minoru Amano ,  Junichi Ito ,  Yuichi Ohsawa ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Shigeki Takahashi

    IPC分类号： G11C11/14

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/228

    摘要： According to one embodiment, a magnetic recording element includes a stacked body including a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer and a first nonmagnetic layer. Magnetization of the first ferromagnetic layer is substantially fixed in a first direction being perpendicular to a first ferromagnetic layer surface. The second stacked unit includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second nonmagnetic layer. Magnetization of the fourth ferromagnetic layer is substantially fixed in a second direction being perpendicular to a fourth ferromagnetic layer surface. The first direction is opposite to the second direction.

    摘要翻译： 根据一个实施例，磁记录元件包括包括第一堆叠单元和第二堆叠单元的堆叠体。 第一堆叠单元包括第一铁磁层，第二铁磁层和第一非磁性层。 第一铁磁层的磁化在垂直于第一铁磁层表面的第一方向上基本固定。 第二堆叠单元包括第三铁磁层，第四铁磁层和第二非磁性层。 第四铁磁层的磁化在垂直于第四铁磁层表面的第二方向上基本固定。 第一方向与第二方向相反。

    Magnetic memory and method of manufacturing the same
    6.
    发明授权
    Magnetic memory and method of manufacturing the same 有权
    磁存储器及其制造方法

    公开(公告)号：US08710605B2

    公开(公告)日：2014-04-29

    申请号：US13231894

    申请日：2011-09-13

    申请人： Shigeki Takahashi ,  Yuichi Ohsawa ,  Junichi Ito ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Minoru Amano ,  Hiroaki Yoda

    发明人： Shigeki Takahashi ,  Yuichi Ohsawa ,  Junichi Ito ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Minoru Amano ,  Hiroaki Yoda

    IPC分类号： H01L29/72

    CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.

    摘要翻译： 根据实施例的磁存储器包括：包括作为存储元件的磁阻元件的至少一个存储单元，以及激励磁阻元件的第一和第二电极。 磁阻元件包括：具有与膜平面垂直的可变磁化方向的第一磁性层; 在第一磁性层上的隧道阻挡层; 以及隧道势垒层上的第二磁性层，并且具有与膜平面垂直的固定的磁化方向。 所述第一磁性层包括：第一区域; 以及围绕第一区域的第一区域外的第二区域，并且具有比第一区域小的垂直磁各向异性能量。 第二磁性层包括：第三区域; 以及第三区域外的第四区域，并且具有比第三区域小的垂直磁各向异性能量。

    MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE
    9.
    发明申请
    MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE 有权
    磁记忆元件和非易失性存储器件

    公开(公告)号：US20130069185A1

    公开(公告)日：2013-03-21

    申请号：US13416724

    申请日：2012-03-09

    申请人： Daisuke SAIDA ,  Minoru Amano ,  Yuichi Ohsawa ,  Junichi Ito ,  Hiroaki Yoda

    发明人： Daisuke SAIDA ,  Minoru Amano ,  Yuichi Ohsawa ,  Junichi Ito ,  Hiroaki Yoda

    IPC分类号： H01L29/82

    CPC分类号： H01F10/3286 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3236 ,  H01F10/329 ,  H01L43/08

    摘要： According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction.

    摘要翻译： 根据一个实施例，磁存储元件包括堆叠体，其包括彼此堆叠的第一和第二堆叠单元。 第一堆叠单元包括第一和第二铁磁层和设置在它们之间的第一非磁性层。 第二堆叠单元包括第三和第四铁磁层和设置在它们之间的第二非磁性层。 第二和第三铁磁层的磁化是可变的。 第一和第四铁磁层的磁化在垂直于层表面的方向固定。 当沿垂直于堆叠方向的平面切割时，第三铁磁层的横截面面积小于第一堆叠单元的横截面面积。

    Magnetic memory element and nonvolatile memory device
    10.
    发明授权
    Magnetic memory element and nonvolatile memory device 有权
    磁存储元件和非易失性存储器件

    公开(公告)号：US08716817B2

    公开(公告)日：2014-05-06

    申请号：US13416724

    申请日：2012-03-09

    申请人： Daisuke Saida ,  Minoru Amano ,  Yuichi Ohsawa ,  Junichi Ito ,  Hiroaki Yoda

    发明人： Daisuke Saida ,  Minoru Amano ,  Yuichi Ohsawa ,  Junichi Ito ,  Hiroaki Yoda

    IPC分类号： H01L29/82

    CPC分类号： H01F10/3286 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3236 ,  H01F10/329 ,  H01L43/08

    摘要： According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction.

    摘要翻译： 根据一个实施例，磁存储元件包括堆叠体，其包括彼此堆叠的第一和第二堆叠单元。 第一堆叠单元包括第一和第二铁磁层和设置在它们之间的第一非磁性层。 第二堆叠单元包括第三和第四铁磁层和设置在它们之间的第二非磁性层。 第二和第三铁磁层的磁化是可变的。 第一和第四铁磁层的磁化在垂直于层表面的方向固定。 当沿垂直于堆叠方向的平面切割时，第三铁磁层的横截面面积小于第一堆叠单元的横截面面积。