摘要:
A semiconductor device comprises a non-volatile memory including a memory cell array, element isolating regions, a second trench and a word line. The memory cell array is constituted by memory cells which have floating electrodes and are arranged in the shape of a matrix on a semiconductor substrate. Each of the element isolating regions has a first trench formed in the semiconductor substrate and between memory cells adjacent to each other along a gate width direction, and an isolating filler filled in the first trench. The second trench is formed in the isolating filler and between the floating electrodes of the memory cells adjacent to each other along the gate width direction, and is narrow at the bottom thereof. The word line is connected to the memory cells, buried in the second trenches and extending along the gate width direction.
摘要:
A method of manufacturing a nonvolatile semiconductor memory device including at least one MOS transistor in a peripheral circuit and also including forming a first well for a memory cell and a second well for the MOS transistor in a semiconductor substrate.
摘要:
In a nonvolatile semiconductor memory device, a charge accumulation layer is formed between adjacent two device isolation regions, at least a portion of the charge accumulation layer sandwiched with the device isolation regions has side walls each having a taper angle of 80 degrees or more and less than 90 degrees so that the charge accumulation layer at a lower end has a width wider than that at an upper end, a size of an opening of each of the device isolation regions is 0.25 &mgr;m or less, and a gate length of a memory cell is 0.2 &mgr;m or less.
摘要:
A nonvolatile semiconductor memory device including at least one MOS transistor in a peripheral circuit comprises a semiconductor substrate, isolation insulating films for defining a plurality of element formation regions, each of the isolation insulating films being buried in an isolation trench provided in the semiconductor substrate, a floating gate provided in each of the element formation regions via a first gate insulating film, a control gate provided on the floating gate via a second gate insulating film, and source and drain regions provided in the semiconductor substrate in self-alignment with the control gate, wherein the floating gate is self-aligned at an isolation end in a direction of a channel width, and comprises a plurality of polysilicon films.
摘要:
A nonvolatile semiconductor memory device including at least one MOS transistor in a peripheral circuit comprises a semiconductor substrate, isolation insulating films for defining a plurality of element formation regions, each of the isolation insulating films being buried in an isolation trench provided in the semiconductor substrate, a floating gate provided in each of the element formation regions via a first gate insulating film, a control gate provided on the floating gate via a second gate insulating film, and source and drain regions provided in the semiconductor substrate in self-alignment with the control gate, wherein the floating gate is self-aligned at an isolation end in a direction of a channel width, and comprises a plurality of polysilicon films.
摘要:
A method for manufacturing a nonvolatile semiconductor memory device having a step of forming a first gate electrode on a peripheral circuit portion and a second gate electrode on a memory cell portion, a step of introducing impurity into the peripheral circuit portion and memory cell portion, a step of forming a first insulating film above at least the memory cell portion, and a step of annealing the semiconductor substrate into which the impurity has been introduced. The first gate electrode has a first gate length. The second gate electrode has a second gate length shorter than the first gate length.
摘要:
A nonvolatile semiconductor memory device includes comprises: an element isolation region being in contact with a first element region, an insulating film covering a memory cell, a peripheral transistor and the element isolation region, an inter-level insulating film provided on the surface of the insulating film, and a contact hole provided in the inter-level insulating film and the insulating film. The inter-level insulating film contains an insulator different from the insulating film. The contact hole reaches at least one of source and drain diffusion layers of the memory cell and overlaps the element isolation region. The insulating film contains an insulator different from the element isolation region and the insulating film is harder for an oxidizing agent to pass therethrough than a silicon oxide film. A surface of the insulating film is oxidized.
摘要:
A nonvolatile semiconductor memory device includes memory cell transistors, peripheral transistors, first post-oxidation films provided on the gate electrode of all of the memory cell transistors, second post-oxidation films provided on the gate electrode of all of the peripheral transistors, first insulating films provided on the first post-oxidation films and covering a side surface of the gate electrode of all of the memory cell transistors and second insulating films provided on the second post-oxidation films and covering a side surface of the gate electrode of all of the peripheral transistors. The first and second insulating films are harder for an oxidizing agent to pass therethrough than a silicon oxide film, and the first and second insulating films are oxidized.
摘要:
A method of fabricating a semiconductor device includes forming on a semiconductor substrate a gate electrode with a gate insulating film being interposed between the substrate and the electrode, forming an insulating film for element isolation protruding from a surface of the semiconductor substrate, forming an oxide film on the surface of the semiconductor substrate with the gate electrode and the element isolation insulating film having been formed, removing the oxide film in a region in which a self-aligned contact hole is to be formed while using a resist pattern for removing the oxide film formed in a region in which the self-aligned contact hole is formed, and etching a part of the element isolation insulating film protruding from the surface of the semiconductor substrate so that said part is substantially on a level with the surface of the semiconductor substrate, while using the resist pattern for removing the oxide film formed in the region in which the self-aligned contact hole is formed.
摘要:
A semiconductor device includes a semiconductor substrate, a plurality of memory cell transistors and select gate transistors both formed in a memory cell region of the semiconductor substrate, and a transistor formed in a peripheral circuit region of the substrate and having a high breakdown voltage. Each select gate transistor of the memory cell region has a gate electrode under which an ion implanted layer is formed for adjustment of a threshold. The transistor having the high breakdown voltage includes a contact region around which a gate insulation film remains.