公开(公告)号：US20090155606A1

公开(公告)日：2009-06-18

申请号：US12325862

申请日：2008-12-01

申请人： Tae Ho Yoon ,  Hyung Sang Park ,  Hak Yong Kwon ,  Young Jae Kim

发明人： Tae Ho Yoon ,  Hyung Sang Park ,  Hak Yong Kwon ,  Young Jae Kim

IPC分类号： B32B9/00

CPC分类号： C23C16/345 ,  C23C16/45542

摘要： Cyclical methods of depositing a silicon nitride film on a substrate are provided. In one embodiment, a method includes supplying a chlorosilane to a reactor in which a substrate is processed; supplying a purge gas to the reactor; and providing ammonia plasma to the reactor. The method allows a silicon nitride film to be formed at a low process temperature and a high deposition rate. The resulting silicon nitride film has a relatively few impurities and a relatively high quality. In addition, a silicon nitride film having good step coverage over features having high aspect ratios and a thin and uniform thickness can be formed.

摘要翻译： 提供了在衬底上沉积氮化硅膜的循环方法。 在一个实施方案中，一种方法包括将氯硅烷供应到其中处理衬底的反应器中; 向反应器供应净化气体; 并向反应器提供氨等离子体。 该方法允许在低工艺温度和高沉积速率下形成氮化硅膜。 所得到的氮化硅膜具有相对较少的杂质和较高的质量。 此外，可以形成具有高纵横比和薄且均匀厚度的特征的具有良好阶梯覆盖率的氮化硅膜。

公开(公告)号：US08076242B2

公开(公告)日：2011-12-13

申请号：US12433629

申请日：2009-04-30

申请人： Jong Su Kim ,  Hyung Sang Park ,  Yong Min Yoo ,  Hak Yong Kwon ,  Tae Ho Yoon

发明人： Jong Su Kim ,  Hyung Sang Park ,  Yong Min Yoo ,  Hak Yong Kwon ,  Tae Ho Yoon

IPC分类号： H01L21/44

CPC分类号： H01L21/02592 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for forming an amorphous silicon thin film is disclosed. In some embodiments, a method includes loading a substrate into a reaction chamber; and conducting a plurality of deposition cycles on the substrate. Each of at least two of the cycles includes: supplying a silicon precursor to the reaction chamber during a first time period; applying radio frequency power to the reaction chamber at least partly during the first time period; stopping supplying of the silicon precursor and applying of the radio frequency power during a second time period between the first time period and an immediately subsequent deposition cycle; and supplying hydrogen plasma to the reaction chamber during a third time period between the second time period and the immediately subsequent deposition cycle. The method allows formation of an amorphous silicon film having an excellent step-coverage and a low roughness at a relatively low deposition temperature.

摘要翻译： 公开了一种形成非晶硅薄膜的方法。 在一些实施例中，一种方法包括将基底装载到反应室中; 以及在所述衬底上进行多个沉积循环。 至少两个循环中的每一个包括：在第一时间段内将硅前体供应到反应室; 至少部分地在第一时间段内向反应室施加射频功率; 在第一时间段和紧随其后的沉积循环之间的第二时间段期间，停止供应硅前体和施加射频功率; 以及在第二时间段和紧随其后的沉积循环之间的第三时间段期间向反应室供应氢等离子体。 该方法允许在相对低的沉积温度下形成具有优异的阶梯覆盖和低粗糙度的非晶硅膜。

公开(公告)号：US20090278224A1

公开(公告)日：2009-11-12

申请号：US12433629

申请日：2009-04-30

申请人： Jong Su Kim ,  Hyung Sang Park ,  Yong Min Yoo ,  Hak Yong Kwon ,  Tae Ho Yoon

发明人： Jong Su Kim ,  Hyung Sang Park ,  Yong Min Yoo ,  Hak Yong Kwon ,  Tae Ho Yoon

IPC分类号： H01L29/06 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L21/02592 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for forming an amorphous silicon thin film is disclosed. In some embodiments, a method includes loading a substrate into a reaction chamber; and conducting a plurality of deposition cycles on the substrate. Each of at least two of the cycles includes: supplying a silicon precursor to the reaction chamber during a first time period; applying radio frequency power to the reaction chamber at least partly during the first time period; stopping supplying of the silicon precursor and applying of the radio frequency power during a second time period between the first time period and an immediately subsequent deposition cycle; and supplying hydrogen plasma to the reaction chamber during a third time period between the second time period and the immediately subsequent deposition cycle. The method allows formation of an amorphous silicon film having an excellent step-coverage and a low roughness at a relatively low deposition temperature.

摘要翻译： 公开了一种形成非晶硅薄膜的方法。 在一些实施例中，一种方法包括将基底装载到反应室中; 以及在所述衬底上进行多个沉积循环。 至少两个循环中的每一个包括：在第一时间段内将硅前体供应到反应室; 至少部分地在第一时间段内向反应室施加射频功率; 在第一时间段和紧随其后的沉积循环之间的第二时间段期间，停止供应硅前体和施加射频功率; 以及在第二时间段和紧随其后的沉积循环之间的第三时间段期间向反应室供应氢等离子体。 该方法允许在相对低的沉积温度下形成具有优异的阶梯覆盖和低粗糙度的非晶硅膜。

公开(公告)号：US20090041952A1

公开(公告)日：2009-02-12

申请号：US12178300

申请日：2008-07-23

申请人： Tae Ho Yoon ,  Hyung Sang Park ,  Yong Min Yoo

发明人： Tae Ho Yoon ,  Hyung Sang Park ,  Yong Min Yoo

IPC分类号： H05H1/24

CPC分类号： C23C16/402 ,  C23C16/45542

摘要： Methods of depositing a silicon oxide film are disclosed. One embodiment is a plasma enhanced atomic layer deposition (PEALD) process that includes supplying a vapor phase silicon precursor, such as a diaminosilane compound, to a substrate, and supplying oxygen plasma to the substrate. Another embodiment is a pulsed hybrid method between atomic layer deposition (ALD) and chemical vapor deposition (CVD). In the other embodiment, a vapor phase silicon precursor, such as a diaminosilane compound, is supplied to a substrate while ozone gas is continuously or discontinuously supplied to the substrate.

摘要翻译： 公开了沉积氧化硅膜的方法。 一个实施例是等离子体增强原子层沉积（PEALD）工艺，其包括将诸如二氨基硅烷化合物的气相硅前体供应到基底，并将氧等离子体供应到基底。 另一个实施例是在原子层沉积（ALD）和化学气相沉积（CVD）之间的脉冲混合方法。 在另一个实施方案中，将诸如二氨基硅烷化合物的气相硅前体供给到基板，同时将臭氧气体连续地或不连续地供应到基板。

公开(公告)号：US20100045226A1

公开(公告)日：2010-02-25

申请号：US12285945

申请日：2008-10-16

申请人： Myung Chul Kim ,  Tae Ho Yoon ,  Hyun Bae Kim ,  Sang Jun Lee

发明人： Myung Chul Kim ,  Tae Ho Yoon ,  Hyun Bae Kim ,  Sang Jun Lee

IPC分类号： H02H7/08

CPC分类号： D06F37/304 ,  Y02B40/52

摘要： A method of controlling a washing machine and a motor determines whether a BLDC motor is in a normal state in software without hardware and a user is notified of an abnormal state of the BLDC motor if the BLDC motor is in an abnormal state, thereby ensuring safety. When the motor is rotated, the state of the motor is determined by applying harmonics to a voltage that is applied to a motor and analyzing an output frequency characteristic. When the motor is stopped, the state of the motor is determined by estimating the temperature of the motor.

摘要翻译： 一种洗衣机和电动机的控制方法，在BLDC电动机处于异常状态的情况下，判定BLDC电动机是否在没有硬件的软件中处于正常状态，并且向用户通知BLDC电动机的异常状态，从而确保安全 。 当电动机旋转时，通过对施加到电动机的电压施加谐波并分析输出频率特性来确定电动机的状态。 当电机停止时，通过估计电机的温度来确定电动机的状态。

公开(公告)号：US08072169B2

公开(公告)日：2011-12-06

申请号：US12285945

申请日：2008-10-16

申请人： Myung Chul Kim ,  Tae Ho Yoon ,  Hyun Bae Kim ,  Sang Jun Lee

发明人： Myung Chul Kim ,  Tae Ho Yoon ,  Hyun Bae Kim ,  Sang Jun Lee

IPC分类号： G01R31/00 ,  G01R31/02

CPC分类号： D06F37/304 ,  Y02B40/52

摘要： A method of controlling a washing machine and a motor determines whether a BLDC motor is in a normal state in software without hardware and a user is notified of an abnormal state of the BLDC motor if the BLDC motor is in an abnormal state, thereby ensuring safety. When the motor is rotated, the state of the motor is determined by applying harmonics to a voltage that is applied to a motor and analyzing an output frequency characteristic. When the motor is stopped, the state of the motor is determined by estimating the temperature of the motor.

摘要翻译： 一种洗衣机和电动机的控制方法，在BLDC电动机处于异常状态的情况下，判定BLDC电动机是否在没有硬件的软件中处于正常状态，并且向用户通知BLDC电动机的异常状态，从而确保安全 。 当电动机旋转时，通过对施加到电动机的电压施加谐波并分析输出频率特性来确定电动机的状态。 当电机停止时，通过估计电机的温度来确定电动机的状态。

公开(公告)号：US06458668B1

公开(公告)日：2002-10-01

申请号：US09653034

申请日：2000-09-01

申请人： Tae Ho Yoon ,  Sang Hoon Cheon ,  Song Cheol Hong ,  Heung Seob Koo ,  Sea Houng Cho

发明人： Tae Ho Yoon ,  Sang Hoon Cheon ,  Song Cheol Hong ,  Heung Seob Koo ,  Sea Houng Cho

IPC分类号： H01L21331

CPC分类号： H01L29/66318 ,  H01L29/7304 ,  H01L29/7371

摘要： Disclosed is a method for manufacturing a hetero junction bipolar transistor capable of forming a ledge by using a low-priced contact aligner and in a selective wet etching manner, without having any expensive stepper and dry etching and forming a ballasting resistor, without having an additional NiCr thin film, whereby the manufacturing processes thereof can be embodied in simple and easy manners, thereby improving productivity and an economical efficiency.

摘要翻译： 公开了一种用于制造异质结双极晶体管的方法，该方法能够使用低价接触对准器和选择性湿蚀刻方式形成凸缘，而不需要任何昂贵的步进和干法蚀刻和形成镇流电阻，而不需要附加的 NiCr薄膜，其制造方法可以简单易行地实施，从而提高生产率和经济效率。