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37 条记录 (耗时 0.064 秒)

    Driver knee bolster of automobile
    3.
    发明授权
    Driver knee bolster of automobile 有权
    汽车司机膝盖

    公开(公告)号：US08465051B2

    公开(公告)日：2013-06-18

    申请号：US12954384

    申请日：2010-11-24

    申请人： Hyun Peal Ha ,  Hong Min Choi ,  Jong Yoon Lee ,  Jung Yoon Jang ,  Yong Kwan Jeon ,  Jeong Han Kim

    发明人： Hyun Peal Ha ,  Hong Min Choi ,  Jong Yoon Lee ,  Jung Yoon Jang ,  Yong Kwan Jeon ,  Jeong Han Kim

    IPC分类号： B60R21/045

    CPC分类号： B60R21/045 ,  B60R2021/0051

    摘要： A driver knee bolster may include a first bracket arranged on a cowl crossbar, wherein an upper portion may be fixed to the cowl crossbar, a second bracket disposed in front of the first bracket, wherein a lower portion of the second bracket may be coupled to a lower portion of the first bracket, and an upper portion of the second bracket may be spaced apart from the upper portion of the first bracket to form a space therebetween, and a buffering member arranged in the space formed between the first and second brackets.

    摘要翻译： 驾驶员膝垫可以包括布置在整流罩横梁上的第一托架，其中上部可以固定到整流罩横梁上，第二托架设置在第一托架的前面，其中第二托架的下部可以联接到 所述第一支架的下部和所述第二支架的上部可以与所述第一支架的上部间隔开，以在它们之间形成空间;以及缓冲构件，布置在形成在所述第一和第二支架之间的空间中。

    Refrigerator and control method thereof
    4.
    发明授权
    Refrigerator and control method thereof 有权

    公开(公告)号：US08464544B2

    公开(公告)日：2013-06-18

    申请号：US12382865

    申请日：2009-03-25

    申请人： Young Shik Shin ,  Jeong Han Kim

    发明人： Young Shik Shin ,  Jeong Han Kim

    IPC分类号： G05D23/32 ,  G05D23/00 ,  F25D11/00 ,  G01M1/38

    CPC分类号： F25D29/00 ,  F25D11/02 ,  F25D2331/805 ,  F25D2500/04 ,  F25D2600/06 ,  F25D2700/08 ,  F25D2700/16

    摘要： A refrigerator capable of supercooling a target object and a control method thereof are provided. The refrigerator includes a temperature sensor which senses a temperature of the target object in the cooling compartment, wherein the temperature sensor is prevented from being in contact with ambient cool air and is installed on a bottom surface on which the target object is placed so as to sense only the temperature of the target object. Further, the control method includes sensing a temperature of the target object at each interval of a specified time Δt, calculating a difference between two temperatures sensed at specified time intervals, and comparing the difference between two temperatures with a predetermined reference value ΔTc to determine the supercooled state of the target object.

    Conductive material and manufacturing method thereof
    5.
    发明授权
    Conductive material and manufacturing method thereof 有权
    导电材料及其制造方法

    公开(公告)号：US08288506B2

    公开(公告)日：2012-10-16

    申请号：US12747804

    申请日：2008-12-12

    申请人： Jeong Han Kim ,  Ji Sung Kim ,  Ki Nam Kwak ,  Sang Min Song ,  Chung Seock Kang

    发明人： Jeong Han Kim ,  Ji Sung Kim ,  Ki Nam Kwak ,  Sang Min Song ,  Chung Seock Kang

    IPC分类号： C08G69/26 ,  C08J3/02 ,  C08G69/00 ,  C08J3/00

    CPC分类号： H01B1/24

    摘要： Disclosed is a method of manufacturing a conductive coating film having superior chemical resistance or solvent resistance and durability by chemically bonding a resin having an amine group (—NH2) with carbon nanotubes having a carboxyl group (—COOH). The conductive material having high bondability with carbon nanotubes and superior electrical properties includes carbon nanotubes uniformly contained therein, and thus has appropriate surface resistivity, and thereby can be used for antistatic, electrostatic dissipation and electromagnetic shielding purposes and in transparent or opaque electrodes depending on the resistivity value.

    摘要翻译： 公开了通过化学键合具有胺基（-NH 2）的树脂与具有羧基（-COOH）的碳纳米管的树脂，制造具有优异的耐化学性或耐溶剂性和耐久性的导电性涂膜的方法。 与碳纳米管具有高粘合性和优异的电性能的导电材料包括均匀地包含在其中的碳纳米管，因此具有适当的表面电阻率，从而可用于抗静电，静电消散和电磁屏蔽目的，并且可用于透明或不透明电极，这取决于 电阻率值。

    TRANSPARENT ELECTRODE
    6.
    发明申请
    TRANSPARENT ELECTRODE 审中-公开
    透明电极

    公开(公告)号：US20110171445A1

    公开(公告)日：2011-07-14

    申请号：US13120033

    申请日：2009-09-22

    申请人： Hak Gee Jung ,  Jeong Han Kim ,  Hyo Jun Park ,  Sang Min Song

    发明人： Hak Gee Jung ,  Jeong Han Kim ,  Hyo Jun Park ,  Sang Min Song

    IPC分类号： B32B7/02 ,  B82Y99/00

    CPC分类号： H05B33/28 ,  H01B1/20 ,  H01B1/24 ,  H01J2211/225 ,  H01L51/5206 ,  H01L2251/55 ,  Y10T428/24975

    摘要： Disclosed herein is a transparent electrode, including: a polyimide film having an average linear thermal expansion coefficient of 50.0 ppm/° C. or less, which is measured by thermo-mechanical analysis based on a film thickness of 50˜100 μm at a temperature of 50˜250° C., and a yellowness of 15 or less; and an electrode layer including a conductive material and a polyimide resin having an average linear thermal expansion coefficient of 50.0 ppm/° C. or less, which is measured by thermo-mechanical analysis based on a film thickness of 50˜100 μm at a temperature of 50˜250° C., and a yellowness of 15 or less. The transparent electrode is advantageous in that a problem of a short circuit does not occur even when apparatuses including this transparent electrode are over-heated because it has excellent heat resistance, and in that it is transparent and has high electroconductivity.

    摘要翻译： 这里公开了一种透明电极，其包括：平均线性热膨胀系数为50.0ppm /℃以下的聚酰亚胺膜，其通过在温度为50〜100μm的膜厚度的热机械分析下测定 为50〜250℃，黄度为15以下; 以及包含导电性材料的电极层和平均线性热膨胀系数为50.0ppm /℃以下的聚酰亚胺树脂，其通过在温度为50〜100μm的膜厚度的热机械分析下测定 为50〜250℃，黄度为15以下。 透明电极的优点在于，即使包括该透明电极的装置由于具有优异的耐热性而被过热，并且其透明且具有高导电性，所以不会发生短路的问题。

    Device of filling metal in through-via-hole of semiconductor wafer and method using the same
    10.
    发明授权
    Device of filling metal in through-via-hole of semiconductor wafer and method using the same 有权
    在半导体晶片的通孔中填充金属的装置及其使用方法

    公开(公告)号：US08486827B2

    公开(公告)日：2013-07-16

    申请号：US13262293

    申请日：2009-12-30

    申请人： Se Hoon Yoo ,  Chang Woo Lee ,  Jun Ki Kim ,  Jeong Han Kim ,  Cheol Hee Kim ,  Young Ki Ko ,  Yue Seon Shin

    发明人： Se Hoon Yoo ,  Chang Woo Lee ,  Jun Ki Kim ,  Jeong Han Kim ,  Cheol Hee Kim ,  Young Ki Ko ,  Yue Seon Shin

    IPC分类号： H01L21/768

    CPC分类号： H01L21/68785 ,  H01L21/68721 ,  H01L21/76898

    摘要： A device of filling metal in a through-via-hole formed in a semiconductor wafer and a method of filling metal in a through-via-hole using the same are disclosed. A device of filling metal in a through-via-hole formed in a semiconductor wafer includes a jig base comprising a jig configured to fix the wafer having the through-via-hole formed therein; a upper chamber 120 installed on the jig base; a lower chamber installed under the jig base; a heater installed in the upper chamber, the heater configured to apply heat to filling metal placed on the wafer to melt the filling metal; and a vacuum pump configured to generate pressure difference between the upper chamber and the lower chamber by the pressure of the lower chamber reduced by discharging air of the lower chamber 130 outside, only to fill the melted filling metal in the through-via-hole.

    摘要翻译： 公开了一种在半导体晶片中形成的通孔中填充金属的装置以及使用该通孔的贯通孔中填充金属的方法。 在半导体晶片中形成的通孔中填充金属的装置包括夹具基座，其包括夹具，其被配置为固定其中形成有通孔的晶片; 安装在夹具基座上的上腔室120; 安装在夹具底下的下腔室; 安装在所述上部腔室中的加热器，所述加热器构造成对放置在所述晶片上的填充金属施加热量以熔化所述填充金属; 以及真空泵，其构造成通过下部腔室130的空气排出而被下部腔室的压力产生上部腔室和下部腔室之间的压力差，仅将填充金属填充到通孔中。