摘要:
Embodiments of the invention may provide for digital wavelet generators utilized in providing flexible spectrum-sensing resolutions for a Multi-Resolution Spectrum Sensing (MRSS) technique. Embodiments of the invention may provide for either multi-point or multi-rate digital wavelet generators. These digital wavelet generators may utilizing the same hardware resource optimally, and the various wavelet bases may be generated by changing the memory addressing schemes or clock speeds.
摘要:
Embodiments of the invention may provide for digital wavelet generators utilized in providing flexible spectrum-sensing resolutions for a Multi-Resolution Spectrum Sensing (MRSS) technique. Embodiments of the invention may provide for either multi-point or multi-rate digital wavelet generators. These digital wavelet generators may utilizing the same hardware resource optimally, and the various wavelet bases may be generated by changing the memory addressing schemes or clock speeds.
摘要:
Embodiments of the present invention may provide for a long delay generator for the spectrum sensing of cognitive radio systems. The long delay generator may comprise of an Analog-to-Digital Converter (ADC), memory element, and Digital-to-Analog Converter (DAC). The memory element may utilize shift register bank or Random-Access Memory (RAM) cells. The long delay generator may provide for a selectable delay by digitizing the received signal, delaying the received signal in the digital domain, and reconstructing the delayed signal as an analog. The analog delayed signal may then be compared or otherwise correlated with the original input signal using an analog auto-correlation technique to determine whether a meaningful signal type has been identified or otherwise detected.
摘要:
Embodiments of the invention may provide for a long delay generator for the spectrum sensing of cognitive radio systems. The long delay generator may include an Analog-to-Digital Converter (ADC), memory element, and Digital-to-Analog Converter (DAC). The memory element may utilize shift register bank or Random-Access Memory (RAM) cells. The long delay generator may provide for a selectable delay by digitizing the received signal, delaying the received signal in the digital domain, and reconstructing the delayed signal as an analog. The analog delayed signal may then be compared or otherwise correlated with the original input signal using an analog auto-correlation technique to determine whether a meaningful signal type has been identified or otherwise detected.
摘要:
Systems and methods may be provided for threshold determinations for spectrum sensing. The systems and methods may include receiving a false alarm rate, where the false alarm rate is associated with false occupancy identifications of a spectrum segment, determining a noise floor as a function of a noise figure and characteristics of a multi-resolution spectrum sensing (MRSS) window, and calculating a sensing threshold based at least in part upon the false alarm rate and the noise floor. The systems and methods may also include determining whether a portion of an RF spectrum is occupied based at least in part on the calculated sensing threshold.
摘要:
Embodiments of the invention may provide for a frequency synthesizer capable to generate an output signal in which the frequency is a fractional portion of the reference frequency without a fractional divider. Based on mathematical relationship (“relatively prime”) between the reference frequency and other injection frequencies mixed with the output signal of a voltage controlled oscillator, the synthesizer is able to generate signals evenly spaced in the frequency domain like Fractional-N PLLs. The synthesizer may include an Integer-N PLL, a SSB mixer, frequency dividers, and frequency multipliers. A Integer-N PLL may include a Phase and Frequency Detector, a Charge Pump, a Loop Filter and a Dual Modulus Divider. By not requiring a fractional divider, the frequency synthesizer is able to avoid adopting any compensation circuits such as Sigma-Delta modulator to suppress fractional spurs. Therefore, the chip area, power consumption and complexity will be reduced considerably.
摘要:
Systems and methods may be provided for threshold determinations for spectrum sensing. The systems and methods may include receiving a false alarm rate, where the false alarm rate is associated with false occupancy identifications of a spectrum segment, determining a noise floor as a function of a noise figure and characteristics of a multi-resolution spectrum sensing (MRSS) window, and calculating a sensing threshold based at least in part upon the false alarm rate and the noise floor. The systems and methods may also include determining whether a portion of an RF spectrum is occupied based at least in part on the calculated sensing threshold.
摘要:
A non-volatile memory array is partitioned along the column direction into first and second portions. The first portion has SLC memory cells and the second portion has MLC memory cells. The first portion acts as a fast cache memory for the second portion. The read/write operations of the first portion are further enhanced by coupling to a set of read/write circuits immediately adjacent to the first portion, while the column of each bit line is switchably cut off at the junction between the first and second portions. In this way, the RC constant of the cut off bit line is at a minimum, which translates to faster precharge of the bit line via the read/write circuits. When the second portion is operating, its access to the set of read/write circuits is accomplished by not cutting off each bit line at the junction between the first and second portions.
摘要:
In non-volatile memory devices, a write typically consists of an alternating set of pulse and verify operations. At the end of a pulse, the device must be biased properly for an accurate verify, after which the device is re-biased for the next pulse. The intervals between the pulse and verify phases are considered. For the interval after a pulse, but before establishing the verify conditions, the source, bit line, and, optionally, the well levels can be equalized and then regulated at a desired DC level. After a verify phase, but before applying the biasing the memory for the next pulse, the source and bit line levels can be equalized to a DC level.
摘要:
In non-volatile memory devices, a write typically consists of an alternating set of pulse and verify operations. At the end of a pulse, the device must be biased properly for an accurate verify, after which the device is re-biased for the next pulse. The intervals between the pulse and verify phases are considered. For the interval after a pulse, but before establishing the verify conditions, the source, bit line, and, optionally, the well levels can be equalized and then regulated at a desired DC level. After a verify phase, but before applying the biasing the memory for the next pulse, the source and bit line levels can be equalized to a DC level.