公开(公告)号：US20170233249A1

公开(公告)日：2017-08-17

申请号：US15585805

申请日：2017-05-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Ting Huang ,  Hsiang-Fu Chen ,  Wen-Chuan Tai ,  Shao-Chi Yu ,  Chia-Ming Hung ,  Allen Timothy Chang ,  Bruce C.S. Chou ,  Chin-Min Lin

IPC: B81C1/00 ,  B81B7/02

CPC classification number: B81C1/00285 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/095 ,  B81B2207/096 ,  B81C2203/0145

Abstract: The present disclosure relates to a method of forming a micro-electro mechanical system (MEMs) structure. In some embodiments, the method may be performed by providing a device substrate having a first MEMS device and a second MEMS device, and by providing a capping structure having a first cavity and a second cavity. The capping structure is bonded to the device substrate, such that the first cavity is arranged over the first MEMS device and the second cavity is arranged over the second MEMS device. A first pressure is established within the first cavity and the second cavity. A vent is selectively etched within the capping structure to change the first pressure within the second cavity to a second pressure, which is different from the first pressure.

公开(公告)号：US20160130137A1

公开(公告)日：2016-05-12

申请号：US14557513

申请日：2014-12-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Ting Huang ,  Hsiang-Fu Chen ,  Wen-Chuan Tai ,  Shao-Chi Yu ,  Chia-Ming Hung ,  Allen Timothy Chang ,  Bruce C.S. Chou ,  Chin-Min Lin

IPC: B81B7/02 ,  B81C1/00

CPC classification number: B81C1/00285 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/095 ,  B81B2207/096 ,  B81C2203/0145

Abstract: Some embodiments relate to multiple MEMS devices that are integrated together on a single substrate. A device substrate comprising first and second micro-electro mechanical system (MEMS) devices is bonded to a capping structure. The capping structure comprises a first cavity arranged over the first MEMS device and a second cavity arranged over the second MEMS device. The first cavity is filled with a first gas at a first gas pressure. The second cavity is filled with a second gas at a second gas pressure, which is different from the first gas pressure. A recess is arranged within a lower surface of the capping structure. The recess abuts the second cavity. A vent is arranged within the capping structure. The vent extends from a top of the recess to the upper surface of the capping structure. A lid is arranged within the vent and configured to seal the second cavity.

Abstract translation: 一些实施例涉及在单个基板上集成在一起的多个MEMS器件。 包括第一和第二微机电系统（MEMS）装置的装置基板被结合到封盖结构。 封盖结构包括布置在第一MEMS器件上的第一腔和布置在第二MEMS器件上的第二腔。 第一腔体以第一气体压力填充第一气体。 第二腔体以与第一气体压力不同的第二气体压力填充第二气体。 凹口布置在封盖结构的下表面内。 凹槽邻接第二腔。 在封盖结构内设有排气口。 通气孔从凹槽的顶部延伸到封盖结构的上表面。 盖子布置在通气口内并构造成密封第二腔体。