公开(公告)号：US20240004304A1

公开(公告)日：2024-01-04

申请号：US17855357

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Hung TSAI ,  Sheng-Kang YU ,  Shang-Chieh CHIEN ,  Heng-Hsin LIU ,  Li-Jui CHEN

IPC: G03F7/20

CPC classification number: G03F7/70175 ,  G03F7/70033

Abstract: Methods and apparatuses for a lithography exposure process are described. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The methods utilized and the apparatuses include two or more collectors for collecting the generated EUV light and reflecting the collected EUV light to a focal point of one of the collectors. In some embodiments, one of the two collectors includes a ring-shaped collector.

公开(公告)号：US20230375944A1

公开(公告)日：2023-11-23

申请号：US17750151

申请日：2022-05-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Chieh CHIEN ,  Tzu-Jung PAN ,  Wei-Shin CHENG ,  Cheng Hung TSAI ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/20

CPC classification number: G03F7/7065 ,  G03F7/70033 ,  G03F7/7085 ,  G03F7/70025 ,  G03F7/70041

Abstract: An extreme ultraviolet (EUV) photolithography system includes a scanner that directs the EUV light onto an EUV reticle. The photolithography system includes one or more contamination reduction structures positioned within the scanner and configured to attract and decompose contaminant particles within the scanner. The contamination reduction structure includes a surface material that is highly electronegative.

公开(公告)号：US20230400763A1

公开(公告)日：2023-12-14

申请号：US18446400

申请日：2023-08-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Hung TSAI ,  Sheng-Kang YU ,  Shang-Chieh CHIEN ,  Heng-Hsin LIU ,  Li-Jui CHEN

IPC: G03F7/00 ,  G03F7/22 ,  G03F7/36 ,  G03F7/20

CPC classification number: G03F7/0035 ,  G03F7/22 ,  G03F7/36 ,  G03F7/2004 ,  G03F7/2026

Abstract: A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.

公开(公告)号：US20220334472A1

公开(公告)日：2022-10-20

申请号：US17232483

申请日：2021-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Hung TSAI ,  Sheng-Kang YU ,  Shang-Chieh CHIEN ,  Heng-Hsin LIU ,  Li-Jui CHEN

IPC: G03F7/00 ,  G03F7/22 ,  G03F7/20 ,  G03F7/36

Abstract: A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.