公开(公告)号：US11508710B2

公开(公告)日：2022-11-22

申请号：US16884046

申请日：2020-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yao Lin ,  Cheng-Yi Hong ,  Feng-Cheng Hsu ,  Shuo-Mao Chen ,  Shin-Puu Jeng ,  Shu-Shen Yeh ,  Kuang-Chun Lee

IPC: H01L25/18 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L23/24 ,  H01L25/00 ,  H01L23/31 ,  H01L21/683 ,  H01L23/00 ,  H01L23/373

Abstract: A method of forming a semiconductor device package includes the following steps. A redistribution structure is formed on a carrier. A plurality of second semiconductor devices are disposed on the redistribution structure. At least one warpage adjusting component is disposed on at least one of the second semiconductor devices. A first semiconductor device is disposed on the redistribution structure. An encapsulating material is formed on the redistribution structure to encapsulate the first semiconductor device, the second semiconductor devices and the warpage adjusting component. The carrier is removed to reveal a bottom surface of the redistribution structure. A plurality of electrical terminals are formed on the bottom surface of the redistribution structure.

公开(公告)号：US10714463B2

公开(公告)日：2020-07-14

申请号：US16693337

申请日：2019-11-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yao Lin ,  Cheng-Yi Hong ,  Feng-Cheng Hsu ,  Shuo-Mao Chen ,  Shin-Puu Jeng ,  Shu-Shen Yeh ,  Kuang-Chun Lee

IPC: H01L23/053 ,  H01L23/12 ,  H01L25/18 ,  H01L21/48 ,  H01L21/56 ,  H01L23/24 ,  H01L25/00 ,  H01L23/31 ,  H01L21/683 ,  H01L23/00 ,  H01L23/538 ,  H01L23/373

Abstract: A method of forming a semiconductor device package includes the following steps. A redistribution structure is formed on a carrier. A plurality of second semiconductor devices are disposed on the redistribution structure. At least one warpage adjusting component is disposed on at least one of the second semiconductor devices. A first semiconductor device is disposed on the redistribution structure. An encapsulating material is formed on the redistribution structure to encapsulate the first semiconductor device, the second semiconductor devices and the warpage adjusting component. The carrier is removed to reveal a bottom surface of the redistribution structure. A plurality of electrical terminals are formed on the bottom surface of the redistribution structure.

公开(公告)号：US10276551B2

公开(公告)日：2019-04-30

申请号：US15854762

申请日：2017-12-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yao Lin ,  Cheng-Yi Hong ,  Feng-Cheng Hsu ,  Shuo-Mao Chen ,  Shin-Puu Jeng ,  Shu-Shen Yeh ,  Kuang-Chun Lee

IPC: H01L23/053 ,  H01L23/12 ,  H01L25/18 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L23/24 ,  H01L25/00 ,  H01L23/31 ,  H01L23/373

Abstract: A semiconductor device package includes a redistribution structure, a first semiconductor device, a plurality of second semiconductor devices, at least one warpage adjusting component, and an encapsulating material. The first semiconductor device is disposed on the redistribution structure. The second semiconductor devices are disposed on the redistribution structure and surround the first semiconductor device. The at least one warpage adjusting component is disposed on at least one of the second semiconductor devices. The encapsulating material encapsulates the first semiconductor device, the second semiconductor devices and the warpage adjusting component, wherein a Young's modulus of the warpage adjusting component is greater than or equal to a Young's modulus of the encapsulating material, and a coefficient of thermal expansion (CTE) of the warpage adjusting component is smaller than a CTE of the encapsulating material.

公开(公告)号：US20200098739A1

公开(公告)日：2020-03-26

申请号：US16693337

申请日：2019-11-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yao Lin ,  Cheng-Yi Hong ,  Feng-Cheng Hsu ,  Shuo-Mao Chen ,  Shin-Puu Jeng ,  Shu-Shen Yeh ,  Kuang-Chun Lee

IPC: H01L25/18 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L23/24 ,  H01L25/00 ,  H01L23/31 ,  H01L21/683 ,  H01L23/00

Abstract: A method of forming a semiconductor device package includes the following steps. A redistribution structure is formed on a carrier. A plurality of second semiconductor devices are disposed on the redistribution structure. At least one warpage adjusting component is disposed on at least one of the second semiconductor devices. A first semiconductor device is disposed on the redistribution structure. An encapsulating material is formed on the redistribution structure to encapsulate the first semiconductor device, the second semiconductor devices and the warpage adjusting component. The carrier is removed to reveal a bottom surface of the redistribution structure. A plurality of electrical terminals are formed on the bottom surface of the redistribution structure.

公开(公告)号：US20190006341A1

公开(公告)日：2019-01-03

申请号：US15854762

申请日：2017-12-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yao Lin ,  Cheng-Yi Hong ,  Feng-Cheng Hsu ,  Shuo-Mao Chen ,  Shin-Puu Jeng ,  Shu-Shen Yeh ,  Kuang-Chun Lee

IPC: H01L25/18 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/24 ,  H01L25/00

Abstract: A semiconductor device package includes a redistribution structure, a first semiconductor device, a plurality of second semiconductor devices, at least one warpage adjusting component, and an encapsulating material. The first semiconductor device is disposed on the redistribution structure. The second semiconductor devices are disposed on the redistribution structure and surround the first semiconductor device. The at least one warpage adjusting component is disposed on at least one of the second semiconductor devices. The encapsulating material encapsulates the first semiconductor device, the second semiconductor devices and the warpage adjusting component, wherein a Young's modulus of the warpage adjusting component is greater than or equal to a Young's modulus of the encapsulating material, and a coefficient of thermal expansion (CTE) of the warpage adjusting component is smaller than a CTE of the encapsulating material.

公开(公告)号：US20200286878A1

公开(公告)日：2020-09-10

申请号：US16884046

申请日：2020-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yao Lin ,  Cheng-Yi Hong ,  Feng-Cheng Hsu ,  Shuo-Mao Chen ,  Shin-Puu Jeng ,  Shu-Shen Yeh ,  Kuang-Chun Lee

IPC: H01L25/18 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L23/24 ,  H01L25/00 ,  H01L23/31 ,  H01L21/683 ,  H01L23/00

Abstract: A method of forming a semiconductor device package includes the following steps. A redistribution structure is formed on a carrier. A plurality of second semiconductor devices are disposed on the redistribution structure. At least one warpage adjusting component is disposed on at least one of the second semiconductor devices. A first semiconductor device is disposed on the redistribution structure. An encapsulating material is formed on the redistribution structure to encapsulate the first semiconductor device, the second semiconductor devices and the warpage adjusting component. The carrier is removed to reveal a bottom surface of the redistribution structure. A plurality of electrical terminals are formed on the bottom surface of the redistribution structure.

公开(公告)号：US20190252363A1

公开(公告)日：2019-08-15

申请号：US16396765

申请日：2019-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yao Lin ,  Cheng-Yi Hong ,  Feng-Cheng Hsu ,  Shuo-Mao Chen ,  Shin-Puu Jeng ,  Shu-Shen Yeh ,  Kuang-Chun Lee

IPC: H01L25/18 ,  H01L21/48 ,  H01L21/56 ,  H01L23/24 ,  H01L25/00 ,  H01L23/31 ,  H01L23/538

CPC classification number: H01L25/18 ,  H01L21/4857 ,  H01L21/56 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/24 ,  H01L23/3128 ,  H01L23/3731 ,  H01L23/3736 ,  H01L23/3738 ,  H01L23/5383 ,  H01L23/562 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/00

Abstract: A method of forming a semiconductor device package includes the following steps. A redistribution structure is formed on a carrier. A plurality of second semiconductor devices are disposed on the redistribution structure. At least one warpage adjusting component is disposed on at least one of the second semiconductor devices. A first semiconductor device is disposed on the redistribution structure. An encapsulating material is formed on the redistribution structure to encapsulate the first semiconductor device, the second semiconductor devices and the warpage adjusting component. The carrier is removed to reveal a bottom surface of the redistribution structure. A plurality of electrical terminals are formed on the bottom surface of the redistribution structure.