公开(公告)号：US20160225630A1

公开(公告)日：2016-08-04

申请号：US14795299

申请日：2015-07-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ru-Shang HSIAO ,  Chi-Cherng JENG ,  Chih-Mu HUANG ,  Shin-Yeu TSAI ,  Fang-Wei LIN

IPC: H01L21/3065 ,  H01L21/308 ,  H01L21/283

CPC classification number: H01L21/3065 ,  H01L21/02068 ,  H01L21/283 ,  H01L21/28518 ,  H01L21/3003 ,  H01L21/3081 ,  H01L21/47635 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76883 ,  H01L21/82345 ,  H01L29/66545

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a metal gate stack over a semiconductor substrate. The method also includes performing a hydrogen-containing plasma treatment on the metal gate stack to modify a surface of the metal gate stack. The hydrogen-containing plasma treatment includes exciting a gas mixture including a first hydrogen-containing gas and a second hydrogen-containing gas to generate a hydrogen-containing plasma.

Abstract translation: 提供一种形成半导体器件结构的方法。 该方法包括在半导体衬底上形成金属栅叠层。 该方法还包括在金属栅极叠层上执行含氢等离子体处理以改变金属栅极叠层的表面。 含氢等离子体处理包括激发包括第一含氢气体和第二含氢气体的气体混合物以产生含氢等离子体。

公开(公告)号：US20180151680A1

公开(公告)日：2018-05-31

申请号：US15494023

申请日：2017-04-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wen HUANG ,  Yun-Wen CHU ,  Hong-Hsien KE ,  Chia-Hui LIN ,  Shin-Yeu TSAI ,  Shih-Chieh CHANG

IPC: H01L29/423 ,  H01L21/02 ,  H01L29/40 ,  H01L21/311 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/4232 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02244 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L29/0649 ,  H01L29/401 ,  H01L29/66545 ,  H01L29/78

Abstract: Semiconductor device structures and methods for forming the same are provided. A method for forming a semiconductor device structure includes forming a gate structure over a semiconductor substrate. The method also includes forming spacer elements adjoining sidewalls of the gate structure. The method further includes forming a protection material layer over the gate structure. The formation of the protection material layer includes a substantial non-plasma process. In addition, the method includes depositing a dielectric material layer over the protection material layer. The deposition of the dielectric material layer includes a plasma-involved process.

公开(公告)号：US20190259847A1

公开(公告)日：2019-08-22

申请号：US16398079

申请日：2019-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wen HUANG ,  Yun-Wen CHU ,  Hong-Hsien KE ,  Chia-Hui LIN ,  Shin-Yeu TSAI ,  Shih-Chieh CHANG

IPC: H01L29/423 ,  H01L29/66 ,  H01L21/311 ,  H01L21/02 ,  H01L29/78 ,  H01L29/06 ,  H01L29/40

Abstract: Semiconductor device structures and methods for forming the same are provided. A semiconductor device structure includes a gate structure over a semiconductor substrate. The gate structure includes a gate electrode layer and a gate dielectric layer covering a bottom surface and sidewalls of the gate electrode layer. The semiconductor device structure also includes spacer elements in contact with sidewalls of the gate structure and protruding from a top surface of the gate electrode layer. The semiconductor device structure also includes a first protection layer over the gate electrode layer and between the spacer elements. The semiconductor device structure also includes a dielectric layer over the first protection layer and between the spacer elements. A portion of the dielectric layer is between sidewalls of the spacer elements and sidewalls of the first protection layer.