公开(公告)号：US20240096677A1

公开(公告)日：2024-03-21

申请号：US18521314

申请日：2023-11-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng Chen ,  Chih-Kai Yang ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/68 ,  G06T1/00 ,  G06T7/00 ,  G06T7/73 ,  H01L23/544

CPC classification number: H01L21/681 ,  G06T1/0014 ,  G06T7/0004 ,  G06T7/73 ,  H01L23/544 ,  G06T2207/30148 ,  H01L2223/54493

Abstract: A method of correcting a misalignment of a wafer on a wafer holder and an apparatus for performing the same are disclosed. In an embodiment, a semiconductor alignment apparatus includes a wafer stage; a wafer holder over the wafer stage; a first position detector configured to detect an alignment of a wafer over the wafer holder in a first direction; a second position detector configured to detect an alignment of the wafer over the wafer holder in a second direction; and a rotational detector configured to detect a rotational alignment of the wafer over the wafer holder.

公开(公告)号：US11854853B2

公开(公告)日：2023-12-26

申请号：US17199980

申请日：2021-03-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng Chen ,  Chih-Kai Yang ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/68 ,  H01L23/544 ,  G06T7/73 ,  G06T1/00 ,  G06T7/00

CPC classification number: H01L21/681 ,  G06T1/0014 ,  G06T7/0004 ,  G06T7/73 ,  H01L23/544 ,  G06T2207/30148 ,  H01L2223/54493

Abstract: A method of correcting a misalignment of a wafer on a wafer holder and an apparatus for performing the same are disclosed. In an embodiment, a semiconductor alignment apparatus includes a wafer stage; a wafer holder over the wafer stage; a first position detector configured to detect an alignment of a wafer over the wafer holder in a first direction; a second position detector configured to detect an alignment of the wafer over the wafer holder in a second direction; and a rotational detector configured to detect a rotational alignment of the wafer over the wafer holder.

公开(公告)号：US20230411156A1

公开(公告)日：2023-12-21

申请号：US18362463

申请日：2023-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng Chen ,  Chun-Hung Wu ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo ,  Chun-Yen Chang ,  Chih-Kai Yang ,  Yu-Tien Shen ,  Ya Hui Chang

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/768

CPC classification number: H01L21/0274 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/31144

Abstract: A method for forming a semiconductor device is provided. In some embodiments, the method includes forming a target layer over a semiconductor substrate, forming a carbon-rich hard masking layer over the target layer, patterning features in the carbon-rich hard masking layer using an etching process, performing a directional ion beam trimming process on the features patterned in the carbon-rich hard masking layer, and patterning the target layer using the carbon-rich hard masking layer as a mask.

公开(公告)号：US11978677B2

公开(公告)日：2024-05-07

申请号：US17459164

申请日：2021-08-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng Chen ,  Chih-Kai Yang ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/66 ,  H01J37/20 ,  H01J37/22 ,  H01J37/304 ,  H01J37/317 ,  H01L21/265 ,  H01L23/544

CPC classification number: H01L22/20 ,  H01J37/20 ,  H01J37/22 ,  H01J37/3045 ,  H01J37/3171 ,  H01L21/265 ,  H01L23/544 ,  H01J2237/20214 ,  H01J2237/30438 ,  H01L2223/54426

Abstract: In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including alignment marks; measuring a position of the wafer by measuring positions of the alignment marks with one or more cameras; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

公开(公告)号：US11978640B2

公开(公告)日：2024-05-07

申请号：US17226332

申请日：2021-04-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Chen Lo ,  Yi-Shan Chen ,  Chih-Kai Yang ,  Pinyen Lin

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/66

CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L22/12

Abstract: In a method of forming a pattern over a semiconductor substrate, a target layer to be patterned is formed over a substrate, a mask pattern including an opening is formed in a mask layer, a shifting film is formed in an inner sidewall of the opening, a one-directional etching operation is performed to remove a part of the shifting film and a part of the mask layer to form a shifted opening, and the target layer is patterned by using the mask layer with the shifted opening as an etching mask. A location of the shifted opening is laterally shifted from an original location of the opening.

公开(公告)号：US20220406629A1

公开(公告)日：2022-12-22

申请号：US17720807

申请日：2022-04-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng Chen ,  Chih-Kai Yang ,  Chun-Liang Chen ,  Wei-Ting Chien ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/67 ,  G03F7/40

Abstract: In an embodiment, a pattern transfer processing chamber includes a pattern transfer processing chamber and a loading area external to the pattern transfer processing chamber. The loading area is configured to transfer a wafer to or from the pattern transfer processing chamber. The loading area comprises a first region including a loadport, a second region including a load-lock between the first region and the pattern transfer processing chamber, and an embedded baking chamber configured to heat a patterned photoresist on the wafer.

公开(公告)号：US12191174B2

公开(公告)日：2025-01-07

申请号：US17720807

申请日：2022-04-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng Chen ,  Chih-Kai Yang ,  Chun-Liang Chen ,  Wei-Ting Chien ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/67 ,  G03F7/40

Abstract: In an embodiment, a pattern transfer processing chamber includes a pattern transfer processing chamber and a loading area external to the pattern transfer processing chamber. The loading area is configured to transfer a wafer to or from the pattern transfer processing chamber. The loading area comprises a first region including a loadport, a second region including a load-lock between the first region and the pattern transfer processing chamber, and an embedded baking chamber configured to heat a patterned photoresist on the wafer.

公开(公告)号：US20240395581A1

公开(公告)日：2024-11-28

申请号：US18790913

申请日：2024-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng Chen ,  Chih-Kai Yang ,  Chun-Liang Chen ,  Wei-Ting Chien ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/67 ,  G03F7/40

Abstract: In an embodiment, a pattern transfer processing chamber includes a pattern transfer processing chamber and a loading area external to the pattern transfer processing chamber. The loading area is configured to transfer a wafer to or from the pattern transfer processing chamber. The loading area comprises a first region including a loadport, a second region including a load-lock between the first region and the pattern transfer processing chamber, and an embedded baking chamber configured to heat a patterned photoresist on the wafer.

公开(公告)号：US20240274478A1

公开(公告)日：2024-08-15

申请号：US18627057

申请日：2024-04-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng Chen ,  Chih-Kai Yang ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/66 ,  H01J37/20 ,  H01J37/22 ,  H01J37/304 ,  H01J37/317 ,  H01L21/265 ,  H01L23/544

CPC classification number: H01L22/20 ,  H01J37/20 ,  H01J37/22 ,  H01J37/3045 ,  H01J37/3171 ,  H01L21/265 ,  H01L23/544 ,  H01J2237/20214 ,  H01J2237/30438 ,  H01L2223/54426

Abstract: In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including alignment marks; measuring a position of the wafer by measuring positions of the alignment marks with one or more cameras; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

公开(公告)号：US11776810B2

公开(公告)日：2023-10-03

申请号：US17463000

申请日：2021-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng Chen ,  Chun-Hung Wu ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo ,  Chun-Yen Chang ,  Chih-Kai Yang ,  Yu-Tien Shen ,  Ya Hui Chang

IPC: H01L21/027 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L21/0274 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802

Abstract: A method for forming a semiconductor device is provided. In some embodiments, the method includes forming a target layer over a semiconductor substrate, forming a carbon-rich hard masking layer over the target layer, patterning features in the carbon-rich hard masking layer using an etching process, performing a directional ion beam trimming process on the features patterned in the carbon-rich hard masking layer, and patterning the target layer using the carbon-rich hard masking layer as a mask.