公开(公告)号：US09312138B2

公开(公告)日：2016-04-12

申请号：US14743419

申请日：2015-06-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Liang-Chen Chi ,  Chia-Ming Tsai ,  Chin-Kun Wang ,  Jhih-Jie Huang ,  Miin-Jang Chen

IPC: H01L21/8238 ,  H01L21/28 ,  H01L29/51

CPC classification number: H01L21/28229 ,  H01L21/28185 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/785

Abstract: A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate. The method includes forming a buffer layer over the semiconductor substrate. The buffer layer is in an amorphous state. The method includes nitriding the buffer layer into a nitride buffer layer. The method includes forming a gate dielectric layer over the nitride buffer layer. The method includes performing a thermal annealing process to convert the gate dielectric layer into a crystalline gate dielectric layer. The method includes forming a gate electrode over the crystalline gate dielectric layer.

Abstract translation: 提供一种形成半导体器件的方法。 该方法包括提供半导体衬底。 该方法包括在半导体衬底上形成缓冲层。 缓冲层处于非晶状态。 该方法包括将缓冲层氮化成氮化物缓冲层。 该方法包括在氮化物缓冲层上形成栅介质层。 该方法包括执行热退火工艺以将栅极电介质层转换成结晶栅极电介质层。 该方法包括在晶体栅介电层上形成栅电极。

公开(公告)号：US09876083B2

公开(公告)日：2018-01-23

申请号：US15009831

申请日：2016-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Liang-Chen Chi ,  Chia-Ming Tsai ,  Chin-Kun Wang ,  Wei-Cheng Wang ,  Miin-Jang Chen

IPC: H01L29/66 ,  H01L29/40 ,  H01L29/78

CPC classification number: H01L29/408 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate, a gate over the substrate and a gate dielectric layer between the gate and the substrate. The gate dielectric layer includes an oxide-inhibiting layer having a dielectric constant greater than about 8 and being in an amorphous state.

公开(公告)号：US09064865B2

公开(公告)日：2015-06-23

申请号：US14052332

申请日：2013-10-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Liang-Chen Chi ,  Chia-Ming Tsai ,  Chin-Kun Wang ,  Jhih-Jie Huang ,  Miin-Jang Chen

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L29/51 ,  H01L21/28

CPC classification number: H01L21/28229 ,  H01L21/28185 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/785

Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a nitride buffer layer over the semiconductor substrate, and the nitride buffer layer is in an amorphous state. The semiconductor device also includes a crystalline gate dielectric layer over the nitride buffer layer and a gate electrode over the crystalline gate dielectric layer.

Abstract translation: 提供了用于形成半导体器件的机构的实施例。 半导体器件包括在半导体衬底上的半导体衬底和氮化物缓冲层，并且氮化物缓冲层处于非晶态。 半导体器件还包括在氮化物缓冲层上的结晶栅极介电层和结晶栅极介电层上的栅电极。

公开(公告)号：US09595593B2

公开(公告)日：2017-03-14

申请号：US14753556

申请日：2015-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Wei-Fan Lee ,  Chee-Wee Liu ,  Chin-Kun Wang ,  Yuh-Ta Fan ,  Chih-Hsiung Huang ,  Tzu-Yao Lin

IPC: H01L21/70 ,  H01L21/336 ,  H01L21/3205 ,  H01L29/51 ,  H01L29/78 ,  H01L29/40 ,  H01L29/423 ,  H01L29/16 ,  H01L29/161

CPC classification number: H01L29/513 ,  H01L21/28229 ,  H01L21/28255 ,  H01L29/16 ,  H01L29/161 ,  H01L29/401 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/78

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and an interfacial layer formed over the substrate. The semiconductor structure further includes a gate structure formed over the interfacial layer. In addition, the interfacial layer is made of metal germanium oxide, metal silicon oxide, or metal germanium silicon oxide and is in direct contact with a top surface of the substrate.

Abstract translation: 提供了半导体结构及其形成方法。 半导体结构包括衬底和形成在衬底上的界面层。 半导体结构还包括形成在界面层上的栅极结构。 此外，界面层由金属氧化锗，金属氧化硅或金属锗氧化硅制成，并与衬底的顶表面直接接触。

公开(公告)号：US20170222000A1

公开(公告)日：2017-08-03

申请号：US15009831

申请日：2016-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Liang-Chen Chi ,  Chia-Ming Tsai ,  Chin-Kun Wang ,  Wei-Cheng Wang ,  Miin-Jang Chen

IPC: H01L29/40 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/408 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate, a gate over the substrate and a gate dielectric layer between the gate and the substrate. The gate dielectric layer includes an oxide-inhibiting layer having a dielectric constant greater than about 8 and being in an amorphous state.

公开(公告)号：US09196718B2

公开(公告)日：2015-11-24

申请号：US13771109

申请日：2013-02-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Liang-Chen Chi ,  Chia-Ming Tsai ,  Yu-Min Chang ,  Chin-Kun Wang ,  Miin-Jang Chen ,  Li-Tien Huang

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51

CPC classification number: H01L29/78 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor substructure with improved performance and a method of forming the same is described. The semiconductor substructure includes a dielectric film over a substrate, the dielectric film including at least one metal dielectric layer, at least one oxygen-donor layer, and at least one nitride-incorporation layer.

Abstract translation: 描述了具有改进性能的半导体子结构及其形成方法。 所述半导体子结构包括在衬底上的电介质膜，所述电介质膜包括至少一个金属介电层，至少一个氧供体层和至少一个氮化物掺入层。

公开(公告)号：US20140231931A1

公开(公告)日：2014-08-21

申请号：US13771109

申请日：2013-02-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Liang-Chen Chi ,  Chia-Ming Tsai ,  Yu-Min Chang ,  Chin-Kun Wang ,  Miin-Jang Chen ,  Li-Tien Huang

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/02

CPC classification number: H01L29/78 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor substructure with improved performance and a method of forming the same is described. The semiconductor substructure includes a dielectric film over a substrate, the dielectric film including at least one metal dielectric layer, at least one oxygen-donor layer, and at least one nitride-incorporation layer.

Abstract translation: 描述了具有改进性能的半导体子结构及其形成方法。 所述半导体子结构包括在衬底上的电介质膜，所述电介质膜包括至少一个金属介电层，至少一个氧供体层和至少一个氮化物掺入层。