公开(公告)号：US20220352020A1

公开(公告)日：2022-11-03

申请号：US17809922

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hsien Huang ,  I-Li Chen ,  Pin-Wen Chen ,  Yuan-Chen Hsu ,  Wei-Jung Lin ,  Chih-Wei Chang ,  Ming-Hsing Tsai

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

Abstract: A method includes forming a first metallic feature, forming a dielectric layer over the first metallic feature, etching the dielectric layer to form an opening, with a top surface of the first metallic feature being exposed through the opening, and performing a first treatment on the top surface of the first metallic feature. The first treatment is performed through the opening, and the first treatment is performed using a first process gas. After the first treatment, a second treatment is performed through the opening, and the second treatment is performed using a second process gas different from the first process gas. A second metallic feature is deposited in the opening

公开(公告)号：US10475702B2

公开(公告)日：2019-11-12

申请号：US15920727

申请日：2018-03-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pin-Wen Chen ,  Chia-Han Lai ,  Chih-Wei Chang ,  Mei-Hui Fu ,  Ming-Hsing Tsai ,  Wei-Jung Lin ,  Yu Shih Wang ,  Ya-Yi Cheng ,  I-Li Chen

IPC: H01L21/768 ,  H01L23/535 ,  H01L21/3213 ,  H01L21/285

Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.

公开(公告)号：US20200343087A1

公开(公告)日：2020-10-29

申请号：US16927638

申请日：2020-07-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Ting Lin ,  Chen-Yuan Kao ,  Rueijer Lin ,  Yu-Sheng Wang ,  I-Li Chen ,  Hong-Ming Wu

IPC: H01L21/02 ,  H01L29/51 ,  H01L21/768 ,  H01L21/285 ,  H01L29/417

Abstract: The present disclosure describes a method that includes forming a dielectric layer over a contact region on a substrate; etching the dielectric layer to form a contact opening to expose the contact region; and pre-cleaning the exposed contact region to remove a residual material formed by the etching. During the pre-cleaning, the contact region is exposed to an inductively coupled radio frequency (RF) plasma. Also, during the pre-cleaning, a direct current power supply unit (DC PSU) provides a bias voltage to the substrate and a magnetic field is applied to the inductively coupled RF plasma to collimate ions.

公开(公告)号：US12288716B2

公开(公告)日：2025-04-29

申请号：US18648979

申请日：2024-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hsien Huang ,  I-Li Chen ,  Pin-Wen Chen ,  Yuan-Chen Hsu ,  Wei-Jung Lin ,  Chih-Wei Chang ,  Ming-Hsing Tsai

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: A method includes forming a first metallic feature, forming a dielectric layer over the first metallic feature, etching the dielectric layer to form an opening, with a top surface of the first metallic feature being exposed through the opening, and performing a first treatment on the top surface of the first metallic feature. The first treatment is performed through the opening, and the first treatment is performed using a first process gas. After the first treatment, a second treatment is performed through the opening, and the second treatment is performed using a second process gas different from the first process gas. A second metallic feature is deposited in the opening.

公开(公告)号：US20240379433A1

公开(公告)日：2024-11-14

申请号：US18782900

申请日：2024-07-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pin-Wen Chen ,  Chia-Han Lai ,  Chih-Wei Chang ,  Mei-Hui Fu ,  Ming-Hsing Tsai ,  Wei-Jung Lin ,  Yu-Shih Wang ,  Ya-Yi Cheng ,  I-Li Chen

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/3213 ,  H01L23/535

Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.

公开(公告)号：US12002712B2

公开(公告)日：2024-06-04

申请号：US17809922

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hsien Huang ,  I-Li Chen ,  Pin-Wen Chen ,  Yuan-Chen Hsu ,  Wei-Jung Lin ,  Chih-Wei Chang ,  Ming-Hsing Tsai

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76861 ,  H01L21/76805 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53257 ,  H01L23/53266

Abstract: A method includes forming a first metallic feature, forming a dielectric layer over the first metallic feature, etching the dielectric layer to form an opening, with a top surface of the first metallic feature being exposed through the opening, and performing a first treatment on the top surface of the first metallic feature. The first treatment is performed through the opening, and the first treatment is performed using a first process gas. After the first treatment, a second treatment is performed through the opening, and the second treatment is performed using a second process gas different from the first process gas. A second metallic feature is deposited in the opening.

公开(公告)号：US20210193517A1

公开(公告)日：2021-06-24

申请号：US17195211

申请日：2021-03-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pin-Wen Chen ,  Chia-Han Lai ,  Chih-Wei Chang ,  Mei-Hui Fu ,  Ming-Hsing Tsai ,  Wei-Jung Lin ,  Yu-Shih Wang ,  Ya-Yi Cheng ,  I-Li Chen

IPC: H01L21/768 ,  H01L23/535 ,  H01L21/3213 ,  H01L21/285

Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.

公开(公告)号：US20240282626A1

公开(公告)日：2024-08-22

申请号：US18648979

申请日：2024-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hsien Huang ,  I-Li Chen ,  Pin-Wen Chen ,  Yuan-Chen Hsu ,  Wei-Jung Lin ,  Chih-Wei Chang ,  Ming-Hsing Tsai

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76861 ,  H01L21/76805 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53257 ,  H01L23/53266

Abstract: A method includes forming a first metallic feature, forming a dielectric layer over the first metallic feature, etching the dielectric layer to form an opening, with a top surface of the first metallic feature being exposed through the opening, and performing a first treatment on the top surface of the first metallic feature. The first treatment is performed through the opening, and the first treatment is performed using a first process gas. After the first treatment, a second treatment is performed through the opening, and the second treatment is performed using a second process gas different from the first process gas. A second metallic feature is deposited in the opening

公开(公告)号：US10714329B2

公开(公告)日：2020-07-14

申请号：US16146529

申请日：2018-09-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Ting Lin ,  Chen-Yuan Kao ,  Rueijer Lin ,  Yu-Sheng Wang ,  I-Li Chen ,  Hong-Ming Wu

IPC: H01L21/4763 ,  H01L21/02 ,  H01L29/51 ,  H01L21/768 ,  H01L21/285 ,  H01L29/417

Abstract: The present disclosure describes a method that includes forming a dielectric layer over a contact region on a substrate; etching the dielectric layer to form a contact opening to expose the contact region; and pre-cleaning the exposed contact region to remove a residual material formed by the etching. During the pre-cleaning, the first contact region is exposed to an inductively coupled radio frequency (RF) plasma. Also, during the pre-cleaning, a direct current power supply unit (DC PSU) provides a bias voltage to the substrate and a magnetic field is applied to the inductively coupled RF plasma to collimate ions.