公开(公告)号：US10513006B2

公开(公告)日：2019-12-24

申请号：US13758378

申请日：2013-02-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jiann Lih Wu ,  Jason Shen ,  Soon-Kang Huang ,  James Jeng-Jyi Hwang ,  Chi-Ming Yang

IPC: B24B37/005

Abstract: A chemical-mechanical polishing system has a first polishing apparatus configured to perform a first chemical-mechanical polish on a workpiece and a second polishing apparatus configured to perform a second chemical-mechanical polish on the workpiece. A rework polishing apparatus comprising a rework platen and a rework CMP head is configured to perform an auxiliary chemical-mechanical polish on the workpiece when the workpiece is positioned on the rework platen. A measurement apparatus measures one or more parameters of the workpiece, and a transport apparatus transports the workpiece between the first polishing apparatus, second polishing apparatus, rework polishing apparatus, and measurement apparatus. A controller determines a selective transport of the workpiece to the rework polishing apparatus by the transport apparatus only when the one or more parameters are unsatisfactory.

公开(公告)号：US20140220863A1

公开(公告)日：2014-08-07

申请号：US13758378

申请日：2013-02-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jiann Lih Wu ,  Jason Shen ,  Soon-Kang Huang ,  James Jeng-Jyi Hwang ,  Chi-Ming Yang

IPC: B24B37/005

CPC classification number: B24B37/005

Abstract: A chemical-mechanical polishing system has a first polishing apparatus configured to perform a first chemical-mechanical polish on a workpiece and a second polishing apparatus configured to perform a second chemical-mechanical polish on the workpiece. A rework polishing apparatus comprising a rework platen and a rework CMP head is configured to perform an auxiliary chemical-mechanical polish on the workpiece when the workpiece is positioned on the rework platen. A measurement apparatus measures one or more parameters of the workpiece, and a transport apparatus transports the workpiece between the first polishing apparatus, second polishing apparatus, rework polishing apparatus, and measurement apparatus. A controller determines a selective transport of the workpiece to the rework polishing apparatus by the transport apparatus only when the one or more parameters are unsatisfactory.

Abstract translation: 化学机械抛光系统具有被配置为在工件上执行第一化学机械抛光的第一抛光装置和被配置为在工件上执行第二化学机械抛光的第二抛光装置。 包括返工板和返工CMP头的返工抛光装置构造成当工件位于返工台板上时在工件上执行辅助化学 - 机械抛光。 测量装置测量工件的一个或多个参数，并且输送装置在第一抛光装置，第二抛光装置，返工抛光装置和测量装置之间输送工件。 只有当一个或多个参数不令人满意时，控制器确定由输送装置选择性地将工件输送到返工抛光装置。

公开(公告)号：US20150352686A1

公开(公告)日：2015-12-10

申请号：US14829995

申请日：2015-08-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jiann Lih Wu ,  Chi-Ming Yang ,  James Jeng-Jyi Hwang

IPC: B24B49/04 ,  B24B37/013 ,  H01L21/67 ,  H01L21/306 ,  H01L21/66 ,  B24B37/015 ,  B24B49/14

CPC classification number: B24B49/04 ,  B24B37/013 ,  B24B37/015 ,  B24B37/042 ,  B24B37/105 ,  B24B49/105 ,  B24B49/14 ,  H01L21/30625 ,  H01L21/67075 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: A localized chemical mechanical polishing (CMP) platform is provided. A table is configured to support a workpiece with a to-be-polished surface. A polishing pad is spaced from the table with a width less than about half that of the table. The polishing pad is configured to individually polish rough regions of hillocks or valleys on the to-be-polished surface. A slurry distribution system is configured to apply slurry to an interface between the polishing pad and the workpiece. A cleaning system is configured to clean the workpiece in situ on the table. A drying system is configured to dry the workpiece in situ on the table. A method for CMP with local profile control and a system with local profile control are also provided.

Abstract translation: 提供了一种局部化学机械抛光（CMP）平台。 桌子被配置为支撑具有待抛光表面的工件。 抛光垫与桌子间隔开，宽度小于餐桌的一半。 抛光垫被配置为分别抛光被抛光表面上的小丘或谷的粗糙区域。 浆料分配系统被配置为将浆料施加到抛光垫和工件之间的界面。 清洁系统被配置为在工作台上原位清洁工件。 干燥系统构造成在工作台上原位干燥工件。 还提供了具有局部轮廓控制的CMP和具有局部轮廓控制的系统的方法。

公开(公告)号：US10065288B2

公开(公告)日：2018-09-04

申请号：US14829995

申请日：2015-08-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jiann Lih Wu ,  Chi-Ming Yang ,  James Jeng-Jyi Hwang

IPC: B24B37/013 ,  B24B37/015 ,  B24B49/04 ,  B24B49/14 ,  H01L21/306 ,  H01L21/66 ,  H01L21/67 ,  B24B49/10 ,  B24B37/04 ,  B24B37/10

Abstract: A localized chemical mechanical polishing (CMP) platform is provided. A table is configured to support a workpiece with a to-be-polished surface. A polishing pad is spaced from the table with a width less than about half that of the table. The polishing pad is configured to individually polish rough regions of hillocks or valleys on the to-be-polished surface. A slurry distribution system is configured to apply slurry to an interface between the polishing pad and the workpiece. A cleaning system is configured to clean the workpiece in situ on the table. A drying system is configured to dry the workpiece in situ on the table. A method for CMP with local profile control and a system with local profile control are also provided.