公开(公告)号：US12218013B2

公开(公告)日：2025-02-04

申请号：US18388419

申请日：2023-11-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Fai Cheng ,  Chang-Miao Liu ,  Kuan-Chung Chen

IPC: H01L21/8238 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L21/3115 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor device with different gate structure configurations and a method of fabricating the semiconductor device are disclosed. The method includes depositing a high-K dielectric layer surrounding nanostructured channel regions, performing a first doping with a rare-earth metal (REM)-based dopant on first and second portions of the high-K dielectric layer, and performing a second doping with the REM-based dopants on the first portions of the high-K dielectric layer and third portions of the high-K dielectric layer. The first doping dopes the first and second portions of the high-K dielectric layer with a first REM-based dopant concentration. The second doping dopes the first and third portions of the high-K dielectric layer with a second REM-based dopant concentration different from the first REM-based dopant concentration. The method further includes depositing a work function metal layer on the high-K dielectric layer and depositing a metal fill layer on the work function metal layer

公开(公告)号：US11107736B1

公开(公告)日：2021-08-31

申请号：US16835987

申请日：2020-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Fai Cheng ,  Chang-Miao Liu ,  Kuan-Chung Chen

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786 ,  H01L29/06 ,  H01L21/3115

Abstract: A semiconductor device with different gate structure configurations and a method of fabricating the semiconductor device are disclosed. The method includes depositing a high-K dielectric layer surrounding nanostructured channel regions, performing a first doping with a rare-earth metal (REM)-based dopant on first and second portions of the high-K dielectric layer, and performing a second doping with the REM-based dopants on the first portions of the high-K dielectric layer and third portions of the high-K dielectric layer. The first doping dopes the first and second portions of the high-K dielectric layer with a first REM-based dopant concentration. The second doping dopes the first and third portions of the high-K dielectric layer with a second REM-based dopant concentration different from the first REM-based dopant concentration. The method further includes depositing a work function metal layer on the high-K dielectric layer and depositing a metal fill layer on the work function metal layer.

公开(公告)号：US11854906B2

公开(公告)日：2023-12-26

申请号：US17461487

申请日：2021-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Fai Cheng ,  Chang-Miao Liu ,  Kuan-Chung Chen

IPC: H01L21/8238 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L21/3115 ,  H01L27/092

CPC classification number: H01L21/823857 ,  H01L21/02192 ,  H01L21/02603 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/3115 ,  H01L21/31111 ,  H01L21/823807 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66742 ,  H01L29/78696

Abstract: A semiconductor device with different gate structure configurations and a method of fabricating the semiconductor device are disclosed. The method includes depositing a high-K dielectric layer surrounding nanostructured channel regions, performing a first doping with a rare-earth metal (REM)-based dopant on first and second portions of the high-K dielectric layer, and performing a second doping with the REM-based dopants on the first portions of the high-K dielectric layer and third portions of the high-K dielectric layer. The first doping dopes the first and second portions of the high-K dielectric layer with a first REM-based dopant concentration. The second doping dopes the first and third portions of the high-K dielectric layer with a second REM-based dopant concentration different from the first REM-based dopant concentration. The method further includes depositing a work function metal layer on the high-K dielectric layer and depositing a metal fill layer on the work function metal layer.

公开(公告)号：US10861721B2

公开(公告)日：2020-12-08

申请号：US16265879

申请日：2019-02-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： You-Hua Chou ,  Min-Hao Hong ,  Kuan-Chung Chen

IPC: H01L21/67 ,  H01L21/687 ,  G03B21/20 ,  H01L33/08 ,  H01R33/08

Abstract: A method includes delivering a wafer into a process chamber, applying a thermal energy to the wafer by a heat source, and moving the heat source substantially along a longitudinal direction of the heat source with respect to the wafer. An apparatus that performs the method is also disclosed.

公开(公告)号：US10204807B2

公开(公告)日：2019-02-12

申请号：US15616914

申请日：2017-06-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： You-Hua Chou ,  Min-Hao Hong ,  Kuan-Chung Chen

IPC: H01L21/67 ,  H01L21/687

Abstract: An apparatus for processing a wafer includes a process chamber, a wafer support, a heat source, and a movable device. The wafer support is in the process chamber. The heat source is in the process chamber. The movable device contacts the heat source, in which the movable device is movable with respect to the wafer support.