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公开(公告)号：US20150015870A1
公开(公告)日：2015-01-15
申请号：US13940335
申请日：2013-07-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Hsien Lin , Kuo-Hung Chao , Yi-Ping Hsieh , Yen-Di Tsen , Jui-Chun Peng , Heng-Hsin Liu , Jong-I Mou
CPC classification number: H01L22/12 , G01B11/24 , G01B13/065 , G01B2210/56 , G01N21/9501 , G03F7/00 , G03F7/70533 , G03F9/7003 , H01L22/20 , H01L22/30
Abstract: The present disclosure relates to a method of monitoring wafer topography. A position and orientation of a plurality first alignment shapes disposed on a surface of a wafer are measured. Wafer topography as a function of wafer position is modeled by subjecting the wafer to an alignment which simultaneously minimizes misalignment between the wafer and a patterning apparatus and maximizes a focus of radiation on the surface. A non-correctable error is determined as a difference between the modeled wafer topography and a measured wafer topography. A maximum non-correctable error per field is determined for a wafer, and a mean variation in the maximum non-correctable error across each field within each wafer of a lot is determined, both within a layer and across layers. These values are then verified against a set of statistical process control rules to determine if they are within a specification limit of the manufacturing process.
Abstract translation: 本公开涉及一种监测晶片形貌的方法。 测量设置在晶片表面上的多个第一对准形状的位置和取向。 作为晶片位置的函数的晶片形貌通过使晶片经受对准，同时最小化晶片和图案形成装置之间的未对准并使辐射在表面上的焦点最大化来建模。 不可校正误差被确定为模拟晶片形貌与测量的晶片形貌之间的差异。 对于晶片确定每场的最大不可校正误差，并且在层内和跨层中确定在批次的每个晶片内的每个场上的每个场的最大不可校正误差的平均变化。 然后根据一组统计过程控制规则验证这些值，以确定它们是否在制造过程的规格限制内。
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Patent Agency Ranking
2.发明申请公开(公告)号：US20140362359A1
公开(公告)日：2014-12-11
申请号：US13913584
申请日：2013-06-10
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Kuo-Hung Chao , Heng-Hsin Liu , Jui-Chun Peng
CPC classification number: G01B11/0608 , G03F9/7026 , G03F9/7034
Abstract: The present disclosure relates to a photolithography system having an ambulatory projection and/or detection gratings that provide for high quality height measurements without the use of an air gauge. In some embodiments, the photolithography system has a level sensor having a projection source that generates a measurement beam that is provided to a semiconductor substrate via a projection grating. A detector is positioned to receive a measurement beam reflected from the semiconductor substrate via a detection grating. An ambulatory element selectively varies an orientation of the projection grating and/or the detection grating to improve the measurement of the level sensor. By selectively varying an orientation of the projection and/or detection gratings, erroneous measurements of the level sensor can be eliminated.
Abstract translation: 本公开涉及一种具有移动式投影和/或检测光栅的光刻系统，其提供高质量的高度测量而不使用空气计。 在一些实施例中，光刻系统具有液位传感器，该液位传感器具有产生经由投影光栅提供给半导体基板的测量光束的投影源。 检测器被定位成经由检测光栅接收从半导体衬底反射的测量光束。 移动元件选择性地改变投影光栅和/或检测光栅的取向以改进液位传感器的测量。 通过选择性地改变投影和/或检测光栅的取向，可以消除液位传感器的错误测量。
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3.发明授权公开(公告)号：US09228827B2
公开(公告)日：2016-01-05
申请号：US13913584
申请日：2013-06-10
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Kuo-Hung Chao , Heng-Hsin Liu , Jui-Chun Peng
CPC classification number: G01B11/0608 , G03F9/7026 , G03F9/7034
Abstract: The present disclosure relates to a photolithography system having an ambulatory projection and/or detection gratings that provide for high quality height measurements without the use of an air gauge. In some embodiments, the photolithography system has a level sensor having a projection source that generates a measurement beam that is provided to a semiconductor substrate via a projection grating. A detector is positioned to receive a measurement beam reflected from the semiconductor substrate via a detection grating. An ambulatory element selectively varies an orientation of the projection grating and/or the detection grating to improve the measurement of the level sensor. By selectively varying an orientation of the projection and/or detection gratings, erroneous measurements of the level sensor can be eliminated.
Abstract translation: 本公开涉及一种具有移动式投影和/或检测光栅的光刻系统，其提供高质量的高度测量而不使用空气规。 在一些实施例中，光刻系统具有液位传感器，该液位传感器具有产生经由投影光栅提供给半导体基板的测量光束的投影源。 检测器被定位成经由检测光栅接收从半导体衬底反射的测量光束。 移动元件选择性地改变投影光栅和/或检测光栅的取向以改进液位传感器的测量。 通过选择性地改变投影和/或检测光栅的取向，可以消除液位传感器的错误测量。
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公开(公告)号：US09123583B2
公开(公告)日：2015-09-01
申请号：US13940335
申请日：2013-07-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Hsien Lin , Kuo-Hung Chao , Yi-Ping Hsieh , Yen-Di Tsen , Jui-Chun Peng , Heng-Hsin Liu , Jong-I Mou
CPC classification number: H01L22/12 , G01B11/24 , G01B13/065 , G01B2210/56 , G01N21/9501 , G03F7/00 , G03F7/70533 , G03F9/7003 , H01L22/20 , H01L22/30
Abstract: The present disclosure relates to a method of monitoring wafer topography. A position and orientation of a plurality first alignment shapes disposed on a surface of a wafer are measured. Wafer topography as a function of wafer position is modeled by subjecting the wafer to an alignment which simultaneously minimizes misalignment between the wafer and a patterning apparatus and maximizes a focus of radiation on the surface. A non-correctable error is determined as a difference between the modeled wafer topography and a measured wafer topography. A maximum non-correctable error per field is determined for a wafer, and a mean variation in the maximum non-correctable error across each field within each wafer of a lot is determined, both within a layer and across layers. These values are then verified against a set of statistical process control rules to determine if they are within a specification limit of the manufacturing process.
Abstract translation: 本公开涉及一种监测晶片形貌的方法。 测量设置在晶片表面上的多个第一对准形状的位置和取向。 作为晶片位置的函数的晶片形貌通过使晶片经受对准，同时最小化晶片和图案形成装置之间的未对准并使辐射在表面上的焦点最大化来建模。 不可校正误差被确定为模拟晶片形貌与测量的晶片形貌之间的差异。 对于晶片确定每场的最大不可校正误差，并且在层内和跨层中确定在批次的每个晶片内的每个场上的每个场的最大不可校正误差的平均变化。 然后根据一组统计过程控制规则验证这些值，以确定它们是否在制造过程的规格限制内。
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公开(公告)号：US09826615B2
公开(公告)日：2017-11-21
申请号：US14860866
申请日：2015-09-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jian-Yuan Su , Hung-Ming Kuo , Kuo-Hung Chao , Jui-Chun Peng
CPC classification number: H05G2/008 , G03F7/00 , G03F7/70033 , G03F7/70175 , G03F7/70916 , G21K1/062 , H05G2/005
Abstract: The present disclosure relates to an extreme ultraviolet (EUV) radiation source having a collector mirror oriented to reduce contamination of fuel droplet debris. In some embodiments, the EUV radiation source has a fuel droplet generator that provides a plurality of fuel droplets to an EUV source vessel. A primary laser is configured to generate a primary laser beam directed towards the plurality of fuel droplets. The primary laser beam has a sufficient energy to ignite a plasma from the plurality of fuel droplets, which emits extreme ultraviolet radiation. A collector mirror, configured to focus the extreme ultraviolet radiation to an exit aperture of the EUV source vessel, which is oriented so that a normal vector extending outward from a vertex of the collector mirror intersects a direction of a gravitation force by an angle that is less than 90°.
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公开(公告)号：US20170086283A1
公开(公告)日：2017-03-23
申请号：US14860866
申请日：2015-09-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jian-Yuan Su , Hung-Ming Kuo , Kuo-Hung Chao , Jui-Chun Peng
IPC: H05G2/00
CPC classification number: H05G2/008 , G03F7/00 , G03F7/70033 , G03F7/70175 , G03F7/70916 , G21K1/062 , H05G2/005
Abstract: The present disclosure relates to an extreme ultraviolet (EUV) radiation source having a collector mirror oriented to reduce contamination of fuel droplet debris. In some embodiments, the EUV radiation source has a fuel droplet generator that provides a plurality of fuel droplets to an EUV source vessel. A primary laser is configured to generate a primary laser beam directed towards the plurality of fuel droplets. The primary laser beam has a sufficient energy to ignite a plasma from the plurality of fuel droplets, which emits extreme ultraviolet radiation. A collector mirror, configured to focus the extreme ultraviolet radiation to an exit aperture of the EUV source vessel, which is oriented so that a normal vector extending outward from a vertex of the collector mirror intersects a direction of a gravitation force by an angle that is less than 90°.
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