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公开(公告)号：US10061215B2
公开(公告)日：2018-08-28
申请号：US15182348
申请日：2016-06-14
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Yung-Yao Lee , Jui-Chun Peng , Ho-Ping Chen , Heng-Hsin Liu
IPC: G03F9/00
CPC classification number: G03F9/7034 , G03F9/7084 , G03F9/7088
Abstract: In a method for fabricating a resist pattern, a substrate coated with a photo resist is loaded on a stage of an exposure apparatus. Underlying patterns are fabricated on the substrate. A surface slope of an exposure area on the substrate is measured. An alignment measurement is performed by detecting an alignment pattern formed in the underlying patterns. An alignment measurement result is corrected based on the measured surface slope. The substrate is aligned to a photo mask by using the corrected alignment measurement result. The photo resist is exposed to radiation passing through the photo mask to form patterns.
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公开(公告)号：US20150015870A1
公开(公告)日：2015-01-15
申请号：US13940335
申请日：2013-07-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Hsien Lin , Kuo-Hung Chao , Yi-Ping Hsieh , Yen-Di Tsen , Jui-Chun Peng , Heng-Hsin Liu , Jong-I Mou
CPC classification number: H01L22/12 , G01B11/24 , G01B13/065 , G01B2210/56 , G01N21/9501 , G03F7/00 , G03F7/70533 , G03F9/7003 , H01L22/20 , H01L22/30
Abstract: The present disclosure relates to a method of monitoring wafer topography. A position and orientation of a plurality first alignment shapes disposed on a surface of a wafer are measured. Wafer topography as a function of wafer position is modeled by subjecting the wafer to an alignment which simultaneously minimizes misalignment between the wafer and a patterning apparatus and maximizes a focus of radiation on the surface. A non-correctable error is determined as a difference between the modeled wafer topography and a measured wafer topography. A maximum non-correctable error per field is determined for a wafer, and a mean variation in the maximum non-correctable error across each field within each wafer of a lot is determined, both within a layer and across layers. These values are then verified against a set of statistical process control rules to determine if they are within a specification limit of the manufacturing process.
Abstract translation: 本公开涉及一种监测晶片形貌的方法。 测量设置在晶片表面上的多个第一对准形状的位置和取向。 作为晶片位置的函数的晶片形貌通过使晶片经受对准，同时最小化晶片和图案形成装置之间的未对准并使辐射在表面上的焦点最大化来建模。 不可校正误差被确定为模拟晶片形貌与测量的晶片形貌之间的差异。 对于晶片确定每场的最大不可校正误差，并且在层内和跨层中确定在批次的每个晶片内的每个场上的每个场的最大不可校正误差的平均变化。 然后根据一组统计过程控制规则验证这些值，以确定它们是否在制造过程的规格限制内。
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公开(公告)号：US09658536B2
公开(公告)日：2017-05-23
申请号：US14189975
申请日：2014-02-25
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Tung-Li Wu , Heng-Hsin Liu , Jui-Chun Peng
IPC: G03F7/20
CPC classification number: G03F7/70341 , G03F7/70925
Abstract: An immersion lithography apparatus includes a lens system, an immersion hood, a wafer stage, an inspection system and a cleaning fluid supplier. The lens system is configured to project a pattern onto a wafer. The immersion hood is configured to confine an immersion fluid between the lens system and the wafer, and includes a peripheral hole configured to suck up the immersion fluid. The wafer stage is configured to position the wafer under the lens system. The inspection system is configured to detect whether there is contamination in the peripheral hole. The cleaning fluid supplier is coupled to the inspection system and configured to supply a cleaning fluid through the peripheral hole to remove the contamination, in which the inspection system and the cleaning fluid supplier are coupled to the wafer stage.
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4.发明授权公开(公告)号：US09228827B2
公开(公告)日：2016-01-05
申请号：US13913584
申请日：2013-06-10
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Kuo-Hung Chao , Heng-Hsin Liu , Jui-Chun Peng
CPC classification number: G01B11/0608 , G03F9/7026 , G03F9/7034
Abstract: The present disclosure relates to a photolithography system having an ambulatory projection and/or detection gratings that provide for high quality height measurements without the use of an air gauge. In some embodiments, the photolithography system has a level sensor having a projection source that generates a measurement beam that is provided to a semiconductor substrate via a projection grating. A detector is positioned to receive a measurement beam reflected from the semiconductor substrate via a detection grating. An ambulatory element selectively varies an orientation of the projection grating and/or the detection grating to improve the measurement of the level sensor. By selectively varying an orientation of the projection and/or detection gratings, erroneous measurements of the level sensor can be eliminated.
Abstract translation: 本公开涉及一种具有移动式投影和/或检测光栅的光刻系统，其提供高质量的高度测量而不使用空气规。 在一些实施例中，光刻系统具有液位传感器，该液位传感器具有产生经由投影光栅提供给半导体基板的测量光束的投影源。 检测器被定位成经由检测光栅接收从半导体衬底反射的测量光束。 移动元件选择性地改变投影光栅和/或检测光栅的取向以改进液位传感器的测量。 通过选择性地改变投影和/或检测光栅的取向，可以消除液位传感器的错误测量。
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公开(公告)号：US09841687B2
公开(公告)日：2017-12-12
申请号：US14798563
申请日：2015-07-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yung-Yao Lee , Heng-Hsin Liu , Jui-Chun Peng , Yung-Cheng Chen
CPC classification number: G03F7/70633
Abstract: The present disclosure relates to a method of semiconductor processing. The method includes, receiving a first wafer having a photoresist coating on a face of the first wafer. An exposure unit is used to perform a first number of radiation exposures on the photoresist coating, thereby forming an exposed photoresist coating. The exposed photoresist coating is developed, thereby forming a developed photoresist coating. An OVL measurement zone pattern is selected from a number of different, pre-determined OVL measurement zone patterns based on at least one of: the first number of radiation exposures performed on the first wafer or a previous number of radiation exposures performed on a previously processed wafer, which was processed before the first wafer. A number of OVL measurements are performed on the developed photoresist coating within the selected OVL measurement zone pattern.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20140362359A1
公开(公告)日：2014-12-11
申请号：US13913584
申请日：2013-06-10
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Kuo-Hung Chao , Heng-Hsin Liu , Jui-Chun Peng
CPC classification number: G01B11/0608 , G03F9/7026 , G03F9/7034
Abstract: The present disclosure relates to a photolithography system having an ambulatory projection and/or detection gratings that provide for high quality height measurements without the use of an air gauge. In some embodiments, the photolithography system has a level sensor having a projection source that generates a measurement beam that is provided to a semiconductor substrate via a projection grating. A detector is positioned to receive a measurement beam reflected from the semiconductor substrate via a detection grating. An ambulatory element selectively varies an orientation of the projection grating and/or the detection grating to improve the measurement of the level sensor. By selectively varying an orientation of the projection and/or detection gratings, erroneous measurements of the level sensor can be eliminated.
Abstract translation: 本公开涉及一种具有移动式投影和/或检测光栅的光刻系统，其提供高质量的高度测量而不使用空气计。 在一些实施例中，光刻系统具有液位传感器，该液位传感器具有产生经由投影光栅提供给半导体基板的测量光束的投影源。 检测器被定位成经由检测光栅接收从半导体衬底反射的测量光束。 移动元件选择性地改变投影光栅和/或检测光栅的取向以改进液位传感器的测量。 通过选择性地改变投影和/或检测光栅的取向，可以消除液位传感器的错误测量。
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公开(公告)号：US11500299B2
公开(公告)日：2022-11-15
申请号：US16994804
申请日：2020-08-17
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Yung-Yao Lee , Heng-Hsin Liu , Hung-Ming Kuo , Jui-Chun Peng
IPC: G03F9/00 , G03F7/20 , H01L21/67 , H01L21/027 , H01L21/66
Abstract: In a method executed in an exposure apparatus, a focus control effective region and a focus control exclusion region are set based on an exposure map and a chip area layout within an exposure area. Focus-leveling data are measured over a wafer. A photo resist layer on the wafer is exposed with an exposure light. When a chip area of a plurality of chip areas of the exposure area is located within an effective region of a wafer, the chip area is included in the focus control effective region, and when a part of or all of a chip area of the plurality of chip areas is located on or outside a periphery of the effective region of the wafer, the chip area is included in the focus control exclusion region In the exposing, a focus-leveling is controlled by using the focus-leveling data measured at the focus control effective region.
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公开(公告)号：US09587929B2
公开(公告)日：2017-03-07
申请号：US14332116
申请日：2014-07-15
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Hung-Ming Kuo , Jui-Chun Peng , Heng-Hsin Liu , Yung-Yao Lee
CPC classification number: G01B11/0608 , G03F7/70641 , G03F9/7026
Abstract: The present disclosure provides a focus metrology method and photolithography method and system. The focus metrology method includes recognizing at least one relevant region and at least one irrelevant region on a workpiece surface, measuring a height of the relevant region and determining a focal length for an exposure process based on the measured height of the relevant region.
Abstract translation: 本公开提供了一种重点测量方法和光刻方法和系统。 重点测量方法包括识别工件表面上的至少一个相关区域和至少一个不相关区域，基于相关区域的测量高度来测量相关区域的高度并确定曝光过程的焦距。
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公开(公告)号：US20170017166A1
公开(公告)日：2017-01-19
申请号：US14798563
申请日：2015-07-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yung-Yao Lee , Heng-Hsin Liu , Jui-Chun Peng , Yung-Cheng Chen
CPC classification number: G03F7/70633
Abstract: The present disclosure relates to a method of semiconductor processing. The method includes, receiving a first wafer having a photoresist coating on a face of the first wafer. An exposure unit is used to perform a first number of radiation exposures on the photoresist coating, thereby forming an exposed photoresist coating. The exposed photoresist coating is developed, thereby forming a developed photoresist coating. An OVL measurement zone pattern is selected from a number of different, pre-determined OVL measurement zone patterns based on at least one of: the first number of radiation exposures performed on the first wafer or a previous number of radiation exposures performed on a previously processed wafer, which was processed before the first wafer. A number of OVL measurements are performed on the developed photoresist coating within the selected OVL measurement zone pattern.
Abstract translation: 本公开涉及一种半导体处理方法。 该方法包括：在第一晶片的表面上接收具有光致抗蚀剂涂层的第一晶片。 曝光单元用于在光致抗蚀剂涂层上执行第一数量的辐射照射，由此形成曝光的光致抗蚀剂涂层。 曝光的光致抗蚀剂涂层被显影，从而形成显影的光刻胶涂层。 基于以下至少一个，从多个不同的预定OVL测量区域图案中选择OVL测量区域图案：在第一晶片上执行的第一数量的辐射曝光或对先前处理的OVL测量区域图案执行的先前数量的辐射曝光 晶片，其在第一晶片之前被处理。 在所选择的OVL测量区域图案中对所开发的光致抗蚀剂涂层进行多个OVL测量。
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公开(公告)号：US09123583B2
公开(公告)日：2015-09-01
申请号：US13940335
申请日：2013-07-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Hsien Lin , Kuo-Hung Chao , Yi-Ping Hsieh , Yen-Di Tsen , Jui-Chun Peng , Heng-Hsin Liu , Jong-I Mou
CPC classification number: H01L22/12 , G01B11/24 , G01B13/065 , G01B2210/56 , G01N21/9501 , G03F7/00 , G03F7/70533 , G03F9/7003 , H01L22/20 , H01L22/30
Abstract: The present disclosure relates to a method of monitoring wafer topography. A position and orientation of a plurality first alignment shapes disposed on a surface of a wafer are measured. Wafer topography as a function of wafer position is modeled by subjecting the wafer to an alignment which simultaneously minimizes misalignment between the wafer and a patterning apparatus and maximizes a focus of radiation on the surface. A non-correctable error is determined as a difference between the modeled wafer topography and a measured wafer topography. A maximum non-correctable error per field is determined for a wafer, and a mean variation in the maximum non-correctable error across each field within each wafer of a lot is determined, both within a layer and across layers. These values are then verified against a set of statistical process control rules to determine if they are within a specification limit of the manufacturing process.
Abstract translation: 本公开涉及一种监测晶片形貌的方法。 测量设置在晶片表面上的多个第一对准形状的位置和取向。 作为晶片位置的函数的晶片形貌通过使晶片经受对准，同时最小化晶片和图案形成装置之间的未对准并使辐射在表面上的焦点最大化来建模。 不可校正误差被确定为模拟晶片形貌与测量的晶片形貌之间的差异。 对于晶片确定每场的最大不可校正误差，并且在层内和跨层中确定在批次的每个晶片内的每个场上的每个场的最大不可校正误差的平均变化。 然后根据一组统计过程控制规则验证这些值，以确定它们是否在制造过程的规格限制内。
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