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公开(公告)号：US09865478B2
公开(公告)日：2018-01-09
申请号：US14589091
申请日：2015-01-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ming-Chin Tsai , Bo-Hung Lin , You-Hua Chou , Chung-En Kao
IPC: C23C14/00 , H01L21/324 , H01L21/67 , C23C14/54 , C23C14/58 , C23C14/50 , H01L21/768
CPC classification number: H01L21/324 , C23C14/50 , C23C14/541 , C23C14/5806 , H01L21/67115 , H01L21/76838
Abstract: The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.
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公开(公告)号：US20170314121A1
公开(公告)日：2017-11-02
申请号：US15651639
申请日：2017-07-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chung-En Kao , Ming-Chin Tsai , You-Hua Chou , Chen-Chia Chiang , Chih-Tsung Lee , Ming-Shiou Kuo
CPC classification number: C23C14/352 , H01J37/3405 , H01J37/3417
Abstract: A thin film deposition system and method provide for multiple target assemblies that may be separately powered. Each target assembly includes a target and associated magnet or set of magnets. The disclosure provides a tunable film profile produced by multiple power sources that separately power the target arrangements. The relative amounts of power supplied to the target arrangements may be customized to provide a desired film and may be varied in time to produce a film with varied characteristics.
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公开(公告)号：US20150118843A1
公开(公告)日：2015-04-30
申请号：US14589091
申请日：2015-01-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ming-Chin Tsai , Bo-Hung Lin , You-Hua Chou , Chung-En Kao
IPC: H01L21/324 , H01L21/768 , C23C14/54 , C23C14/58 , C23C14/50
CPC classification number: H01L21/324 , C23C14/50 , C23C14/541 , C23C14/5806 , H01L21/67115 , H01L21/76838
Abstract: The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.
Abstract translation: 本公开涉及被配置为加热半导体衬底或晶片的物理气相沉积系统。 在一些实施例中，所公开的物理气相沉积系统包括至少一个热源，其具有用于加热基底的一个或多个灯模块。 灯模块可以通过屏蔽装置与衬底分离。 在一些实施例中，屏蔽装置包括一件式装置或两件式装置。 所公开的物理气相沉积系统可以加热半导体衬底，回流沉积在其上的金属膜，而不需要单独的室，由此减少处理时间，需要较少的热量预算和减少衬底损伤。
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公开(公告)号：US10190209B2
公开(公告)日：2019-01-29
申请号：US15651639
申请日：2017-07-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chung-En Kao , Ming-Chin Tsai , You-Hua Chou , Chen-Chia Chiang , Chih-Tsung Lee , Ming-Shiou Kuo
Abstract: A thin film deposition system and method provide for multiple target assemblies that may be separately powered. Each target assembly includes a target and associated magnet or set of magnets. The disclosure provides a tunable film profile produced by multiple power sources that separately power the target arrangements. The relative amounts of power supplied to the target arrangements may be customized to provide a desired film and may be varied in time to produce a film with varied characteristics.
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