公开(公告)号：US20200343281A1

公开(公告)日：2020-10-29

申请号：US16924579

申请日：2020-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Chuang Wu ,  Ching-Chun Wang ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Jen-Cheng Liu ,  Yen-Ting Chiang ,  Chun-Yuan Chen ,  Shen-Hui Hong

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/374

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a plurality of pixel regions disposed within a substrate and respectively comprising a photodiode configured to receive radiation that enters the substrate from a back-side. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions surrounding the photodiode. The BDTI structure extends from the back-side of the substrate to a first depth within the substrate. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel regions overlying the photodiode. The MDTI structure extends from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure is a continuous integral unit having a ring shape.

公开(公告)号：US11495630B2

公开(公告)日：2022-11-08

申请号：US16924579

申请日：2020-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Chuang Wu ,  Ching-Chun Wang ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Jen-Cheng Liu ,  Yen-Ting Chiang ,  Chun-Yuan Chen ,  Shen-Hui Hong

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/369

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a plurality of pixel regions disposed within a substrate and respectively comprising a photodiode configured to receive radiation that enters the substrate from a back-side. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions surrounding the photodiode. The BDTI structure extends from the back-side of the substrate to a first depth within the substrate. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel regions overlying the photodiode. The MDTI structure extends from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure is a continuous integral unit having a ring shape.

公开(公告)号：US20200058685A1

公开(公告)日：2020-02-20

申请号：US16661136

申请日：2019-10-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Chuang Wu ,  Ching-Chun Wang ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Jen-Cheng Liu ,  Yen-Ting Chiang ,  Chun-Yuan Chen ,  Shen-Hui Hong

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/369

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. The photodiode comprises a doped layer with a first doping type and an adjoining region of the substrate with a second doping type that is different than the first doping type. A boundary deep trench isolation (BDTI) structure is disposed between adjacent pixel regions. A multiple deep trench isolation (MDTI) structure overlies the doped layer of the photodiode. The MDTI structure comprises a stack of dielectric layers lining sidewalls of a MDTI trench. A plurality of color filters is disposed at the back-side of the substrate corresponding to the respective photodiode of the plurality of pixel regions and overlying the MDTI structure.

公开(公告)号：US11139367B2

公开(公告)日：2021-10-05

申请号：US16365904

申请日：2019-03-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Seiji Takahashi ,  Chen-Jong Wang ,  Dun-Nian Yaung ,  Jung-I Lin ,  Jhy-Jyi Sze ,  Alexander Kalnitsky ,  Yimin Huang ,  King Liao ,  Shen-Hui Hong

IPC: H01L49/02 ,  H01L21/768

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a dielectric structure disposed over a substrate. A plurality of conductive interconnect layers are disposed within the dielectric structure. The plurality of conductive interconnect layers include alternating layers of interconnect wires and interconnect vias. A metal-insulating-metal (MIM) capacitor is arranged within the dielectric structure. The MIM capacitor has a lower conductive electrode separated from an upper conductive electrode by a capacitor dielectric structure. The MIM capacitor vertically extends past two or more of the plurality of conductive interconnect layers.

公开(公告)号：US20190165009A1

公开(公告)日：2019-05-30

申请号：US15822701

申请日：2017-11-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Chuang Wu ,  Ching-Chun Wang ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Jen-Cheng Liu ,  Yen-Ting Chiang ,  Chun-Yuan Chen ,  Shen-Hui Hong

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/374

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. A boundary deep trench isolation (BDTI) structure is disposed between adjacent pixel regions, extending from a back-side of the substrate to a first depth within the substrate, and surrounding the photodiode. A multiple deep trench isolation (MDTI) structure is disposed within the individual pixel region, extending from the back-side of the substrate to a second depth within the substrate, and overlying the photodiode. A dielectric layer fills in a BDTI trench of the BDTI structure and a MDTI trench of the MDTI structure.

公开(公告)号：US10861894B2

公开(公告)日：2020-12-08

申请号：US16661166

申请日：2019-10-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Chuang Wu ,  Ching-Chun Wang ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Jen-Cheng Liu ,  Yen-Ting Chiang ,  Chun-Yuan Chen ,  Shen-Hui Hong

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/374

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of photodiodes is formed from a front-side of a substrate. A plurality of boundary deep trench isolation (BDTI) trenches having a first depth and a plurality of multiple deep trench isolation (MDTI) trenches having a second depth are formed from a back-side of the substrate. A stack of dielectric layers is formed in the BDTI trenches and the MDTI trenches. A plurality of color filters is formed overlying the stack of dielectric layers corresponding to the plurality of photodiodes.

公开(公告)号：US10727265B2

公开(公告)日：2020-07-28

申请号：US16661136

申请日：2019-10-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Chuang Wu ,  Ching-Chun Wang ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Jen-Cheng Liu ,  Yen-Ting Chiang ,  Chun-Yuan Chen ,  Shen-Hui Hong

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/374

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. The photodiode comprises a doped layer with a first doping type and an adjoining region of the substrate with a second doping type that is different than the first doping type. A boundary deep trench isolation (BDTI) structure is disposed between adjacent pixel regions. A multiple deep trench isolation (MDTI) structure overlies the doped layer of the photodiode. The MDTI structure comprises a stack of dielectric layers lining sidewalls of a MDTI trench. A plurality of color filters is disposed at the back-side of the substrate corresponding to the respective photodiode of the plurality of pixel regions and overlying the MDTI structure.

公开(公告)号：US20200058686A1

公开(公告)日：2020-02-20

申请号：US16661166

申请日：2019-10-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Chuang Wu ,  Ching-Chun Wang ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Jen-Cheng Liu ,  Yen-Ting Chiang ,  Chun-Yuan Chen ,  Shen-Hui Hong

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/369

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of photodiodes is formed from a front-side of a substrate. A plurality of boundary deep trench isolation (BDTI) trenches having a first depth and a plurality of multiple deep trench isolation (MDTI) trenches having a second depth are formed from a back-side of the substrate. A stack of dielectric layers is formed in the BDTI trenches and the MDTI trenches. A plurality of color filters is formed overlying the stack of dielectric layers corresponding to the plurality of photodiodes.

公开(公告)号：US10461109B2

公开(公告)日：2019-10-29

申请号：US15822701

申请日：2017-11-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Chuang Wu ,  Ching-Chun Wang ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Jen-Cheng Liu ,  Yen-Ting Chiang ,  Chun-Yuan Chen ,  Shen-Hui Hong

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/374

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. A boundary deep trench isolation (BDTI) structure is disposed between adjacent pixel regions, extending from a back-side of the substrate to a first depth within the substrate, and surrounding the photodiode. A multiple deep trench isolation (MDTI) structure is disposed within the individual pixel region, extending from the back-side of the substrate to a second depth within the substrate, and overlying the photodiode. A dielectric layer fills in a BDTI trench of the BDTI structure and a MDTI trench of the MDTI structure.