公开(公告)号：US20180350984A1

公开(公告)日：2018-12-06

申请号：US16049358

申请日：2018-07-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Carlos H. DIAZ ,  Chun-Hsiung LIN ,  Huicheng CHANG ,  Syun-Ming JANG ,  Chien-Hsun WANG ,  Mao-Lin HUANG

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/775 ,  H01L29/66 ,  H01L29/786 ,  B82Y10/00 ,  H01L29/423 ,  H01L29/778 ,  H01L29/165 ,  H01L29/51

CPC classification number: H01L29/7842 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/165 ,  H01L29/42392 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66431 ,  H01L29/775 ,  H01L29/7781 ,  H01L29/78696

Abstract: In a method of manufacturing a semiconductor device, a support layer is formed over a substrate. A patterned semiconductor layer made of a first semiconductor material is formed over the support layer. A part of the support layer under a part of the semiconductor layer is removed, thereby forming a semiconductor wire. A semiconductor shell layer made of a second semiconductor material different from the first semiconductor material is formed around the semiconductor wire.

公开(公告)号：US20230215807A1

公开(公告)日：2023-07-06

申请号：US18094866

申请日：2023-01-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Jiun LIU ,  Chen-Yuan KAO ,  Hung-Wen SU ,  Ming-Hsing TSAI ,  Syun-Ming JANG

IPC: H01L23/532 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L21/3105 ,  H01L21/288 ,  H01L21/311

CPC classification number: H01L23/53238 ,  H01L21/32133 ,  H01L21/76852 ,  H01L21/76834 ,  H01L23/528 ,  H01L21/76837 ,  H01L23/5226 ,  H01L23/5283 ,  H01L21/31053 ,  H01L21/76802 ,  H01L21/76846 ,  H01L21/76877 ,  H01L21/2885 ,  H01L21/288 ,  H01L21/76885 ,  H01L21/76873 ,  H01L21/31111 ,  H01L23/522 ,  H01L2924/0002

Abstract: A semiconductor structure with an improved metal structure is described. The semiconductor structure can include a substrate having an upper surface, an interconnect layer over the upper surface, and an additional structure deposited over the interconnect layer. The interconnect layer can include a patterned seed layer over the substrate, at least two metal lines over the seed layer, and a dielectric material between adjacent metal lines. A barrier layer can be deposited over the at least two metal lines. Methods of making the semiconductor structures are also described.

公开(公告)号：US20170133324A1

公开(公告)日：2017-05-11

申请号：US15401470

申请日：2017-01-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wen-Jiun LIU ,  Chen-Yuan KAO ,  Hung-Wen SU ,  Ming-Hsing TSAI ,  Syun-Ming JANG

IPC: H01L23/532 ,  H01L21/288 ,  H01L23/522 ,  H01L21/3105 ,  H01L21/311 ,  H01L23/528 ,  H01L21/768 ,  H01L21/3213

Abstract: A semiconductor structure with an improved metal structure is described. The semiconductor structure can include a substrate having an upper surface, an interconnect layer over the upper surface, and an additional structure deposited over the interconnect layer. The interconnect layer can include a patterned seed layer over the substrate, at least two metal lines over the seed layer, and a dielectric material between adjacent metal lines. A barrier layer can be deposited over the at least two metal lines. Methods of making the semiconductor structures are also described.