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1.发明申请公开(公告)号：US20200319545A1
公开(公告)日：2020-10-08
申请号：US16908449
申请日：2020-06-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
Abstract: A lithography system includes a radiation source configured to generate an extreme ultraviolet (EUV) light. The lithography system includes a mask that defines one or more features of an integrated circuit (IC). The lithography system includes an illuminator configured to direct the EUV light onto the mask. The mask diffracts the EUV light into a 0-th order ray and a plurality of higher order rays. The lithography system includes a wafer stage configured to secure a wafer that is to be patterned according to the one or more features defined by the mask. The lithography system includes a pupil phase modulator positioned in a pupil plane that is located between the mask and the wafer stage. The pupil phase modulator is configured to change a phase of the 0-th order ray.
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2.发明申请Extreme Ultraviolet (EUV) Mask, Method Of Fabricating The EUV Mask And Method Of Inspecting The EUV Mask 有权极紫外线（EUV）面膜，制造EUV面膜的方法和检查EUV面膜的方法公开(公告)号：US20150037712A1
公开(公告)日：2015-02-05
申请号：US13955164
申请日：2013-07-31
Applicant: Taiwan Semiconductor Manufacturing Co., LTD.
Inventor： Chih-Tsung Shih , Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
Abstract: An out-of-band (OoB) suppression layer is applied on a reflective multiplayer (ML) coating, so as to avoid the OoB reflection and to enhance the optical contrast at 13.5 nm A material having a low reflectivity at wavelength of 193-257 nm, for example, silicon carbide (SiC), is used as the OoB suppression layer. A method of fabricating an EUV mask having the OoB suppression layer and a method of inspecting an EUV mask having the OoB suppression are also provided.
Abstract translation: 将带外（OoB）抑制层施加在反射多人（ML）涂层上，以避免OoB反射并增强13.5nm处的光学对比度。在波长193-257处具有低反射率的材料 使用例如碳化硅（SiC）作为OoB抑制层。 还提供了制造具有OoB抑制层的EUV掩模的方法和检查具有OoB抑制的EUV掩模的方法。
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3.发明授权公开(公告)号：US10162257B2
公开(公告)日：2018-12-25
申请号：US15380717
申请日：2016-12-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
Abstract: A lithography system includes a radiation source configured to generate an extreme ultraviolet (EUV) light. The lithography system includes a mask that defines one or more features of an integrated circuit (IC). The lithography system includes an illuminator configured to direct the EUV light onto the mask. The mask diffracts the EUV light into a 0-th order ray and a plurality of higher order rays. The lithography system includes a wafer stage configured to secure a wafer that is to be patterned according to the one or more features defined by the mask. The lithography system includes a pupil phase modulator positioned in a pupil plane that is located between the mask and the wafer stage. The pupil phase modulator is configured to change a phase of the 0-th order ray.
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Patent Agency Ranking
4.发明申请公开(公告)号：US20180173089A1
公开(公告)日：2018-06-21
申请号：US15380717
申请日：2016-12-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
CPC classification number: G03F1/26 , G03F7/70033 , G03F7/70191 , G03F7/70308
Abstract: A lithography system includes a radiation source configured to generate an extreme ultraviolet (EUV) light. The lithography system includes a mask that defines one or more features of an integrated circuit (IC). The lithography system includes an illuminator configured to direct the EUV light onto the mask. The mask diffracts the EUV light into a 0-th order ray and a plurality of higher order rays. The lithography system includes a wafer stage configured to secure a wafer that is to be patterned according to the one or more features defined by the mask. The lithography system includes a pupil phase modulator positioned in a pupil plane that is located between the mask and the wafer stage. The pupil phase modulator is configured to change a phase of the 0-th order ray.
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5.发明申请公开(公告)号：US20190121228A1
公开(公告)日：2019-04-25
申请号：US16220324
申请日：2018-12-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
Abstract: A lithography system includes a radiation source configured to generate an extreme ultraviolet (EUV) light. The lithography system includes a mask that defines one or more features of an integrated circuit (IC). The lithography system includes an illuminator configured to direct the EUV light onto the mask. The mask diffracts the EUV light into a 0-th order ray and a plurality of higher order rays. The lithography system includes a wafer stage configured to secure a wafer that is to be patterned according to the one or more features defined by the mask. The lithography system includes a pupil phase modulator positioned in a pupil plane that is located between the mask and the wafer stage. The pupil phase modulator is configured to change a phase of the 0-th order ray.
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6.发明授权公开(公告)号：US10976655B2
公开(公告)日：2021-04-13
申请号：US16908449
申请日：2020-06-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
Abstract: A lithography system includes a radiation source configured to generate an extreme ultraviolet (EUV) light. The lithography system includes a mask that defines one or more features of an integrated circuit (IC). The lithography system includes an illuminator configured to direct the EUV light onto the mask. The mask diffracts the EUV light into a 0-th order ray and a plurality of higher order rays. The lithography system includes a wafer stage configured to secure a wafer that is to be patterned according to the one or more features defined by the mask. The lithography system includes a pupil phase modulator positioned in a pupil plane that is located between the mask and the wafer stage. The pupil phase modulator is configured to change a phase of the 0-th order ray.
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7.发明授权公开(公告)号：US10691014B2
公开(公告)日：2020-06-23
申请号：US16220324
申请日：2018-12-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
Abstract: A lithography system includes a radiation source configured to generate an extreme ultraviolet (EUV) light. The lithography system includes a mask that defines one or more features of an integrated circuit (IC). The lithography system includes an illuminator configured to direct the EUV light onto the mask. The mask diffracts the EUV light into a 0-th order ray and a plurality of higher order rays. The lithography system includes a wafer stage configured to secure a wafer that is to be patterned according to the one or more features defined by the mask. The lithography system includes a pupil phase modulator positioned in a pupil plane that is located between the mask and the wafer stage. The pupil phase modulator is configured to change a phase of the 0-th order ray.
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8.发明授权Extreme ultraviolet (EUV) mask, method of fabricating the EUV mask and method of inspecting the EUV mask 有权极紫外（EUV）掩模，制造EUV掩模的方法和检查EUV掩模的方法公开(公告)号：US09081288B2
公开(公告)日：2015-07-14
申请号：US13955164
申请日：2013-07-31
Applicant: Taiwan Semiconductor Manufacturing Co., LTD.
Inventor： Chih-Tsung Shih , Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
Abstract: An out-of-band (OoB) suppression layer is applied on a reflective multiplayer (ML) coating, so as to avoid the OoB reflection and to enhance the optical contrast at 13.5 nm. A material having a low reflectivity at wavelength of 193-257 nm, for example, silicon carbide (SiC), is used as the OoB suppression layer. A method of fabricating an EUV mask having the OoB suppression layer and a method of inspecting an EUV mask having the OoB suppression are also provided.
Abstract translation: 将带外（OoB）抑制层施加在反射多人（ML）涂层上，以避免OoB反射并增强13.5nm处的光学对比度。 使用波长为193-257nm的低反射率的材料，例如碳化硅（SiC），作为OoB抑制层。 还提供了制造具有OoB抑制层的EUV掩模的方法和检查具有OoB抑制的EUV掩模的方法。
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