OVERLAY SAMPLING METHODOLOGY
    1.
    发明申请
    OVERLAY SAMPLING METHODOLOGY 有权
    覆盖采样方法

    公开(公告)号:US20140240706A1

    公开(公告)日:2014-08-28

    申请号:US14252612

    申请日:2014-04-14

    CPC classification number: G03F7/70633 G01B11/14 G01B2210/56

    Abstract: A process of measuring overlay metrologies of wafers, the wafer having a plurality of patterned layers. The process begins with retrieving historical overlay metrologies from a database, and real overlay metrologies of a first group of the wafers are measured. On the other hand, virtual overlay metrologies of a second group of the wafers are calculated with the retrieved historical overly metrologies. The real overlay metrologies of the first group of the wafers and the virtual overlay metrologies of the second group of the wafers are stored to the database as the historical overlay metrologies.

    Abstract translation: 测量晶片叠加计量的过程,晶片具有多个图案化层。 该过程开始于从数据库中检索历史叠加计量,并且测量第一组晶片的实际重叠计量。 另一方面,第二组晶片的虚拟覆盖计量学用所检索的历史过度计量来计算。 第一组晶圆的真实覆盖计量学和第二组晶圆的虚拟覆盖计量学作为历史重叠计量存储到数据库。

    EDGE-DOMINANT ALIGNMENT METHOD IN EXPOSURE SCANNER SYSTEM
    2.
    发明申请
    EDGE-DOMINANT ALIGNMENT METHOD IN EXPOSURE SCANNER SYSTEM 有权
    接触扫描仪系统中的边缘对准方法

    公开(公告)号:US20150116686A1

    公开(公告)日:2015-04-30

    申请号:US14066949

    申请日:2013-10-30

    Abstract: An edge-dominant alignment method for use in an exposure scanner system is provided. The method includes the steps of: providing a wafer having a plurality of shot areas, wherein each shot area has a plurality of alignment marks; determining a first outer zone of the wafer, wherein the first outer zone includes a first portion of the shot areas along a first outer edge of the wafer; determining a scan path according to the shot areas of the first outer zone; and performing an aligning process to each shot area of the first outer zone according to the scan path and an alignment mark of each shot area of the first outer zone.

    Abstract translation: 提供了一种用于曝光扫描仪系统的边缘优势对准方法。 该方法包括以下步骤:提供具有多个拍摄区域的晶片,其中每个拍摄区域具有多个对准标记; 确定所述晶片的第一外部区域,其中所述第一外部区域沿所述晶片的第一外部边缘包括所述引射区域的第一部分; 根据所述第一外部区域的拍摄区域确定扫描路径; 以及根据所述扫描路径和所述第一外部区域的每个拍摄区域的对准标记,对所述第一外部区域的每个拍摄区域进行对准处理。

    OVERLAY METROLOGY METHOD AND OVERLAY CONTROL METHOD AND SYSTEM
    3.
    发明申请
    OVERLAY METROLOGY METHOD AND OVERLAY CONTROL METHOD AND SYSTEM 有权
    重叠方程和叠加控制方法与系统

    公开(公告)号:US20160025650A1

    公开(公告)日:2016-01-28

    申请号:US14338041

    申请日:2014-07-22

    Abstract: The present disclosure provides an overlay metrology method, an overlay control method and an overlay control system. The overlay metrology method includes capturing a current layer image of a current overlay mark on a current layer with a current focal length and capturing a previous layer image of a previous overlay mark on a previous layer with a previous focal length. Then, the overlay metrology method further includes combining the current layer image with the previous layer image to form an overlay mark image and determining an overlay error between the current overlay mark and the previous overlay mark based on the overlay mark image.

    Abstract translation: 本公开提供了覆盖计量方法,覆盖控制方法和覆盖控制系统。 覆盖度量方法包括以当前焦距捕获当前层上的当前覆盖标记的当前层图像,并且以先前焦距捕获先前层上的先前叠加标记的先前层图像。 然后,覆盖度量方法还包括将当前层图像与先前层图像组合以形成覆盖标记图像,并且基于重叠标记图像确定当前叠加标记与先前叠加标记之间的重叠误差。

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