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公开(公告)号：US20240271271A1
公开(公告)日：2024-08-15
申请号：US18326256
申请日：2023-05-31
发明人： Chia-Hsi Wang , Yen-Yu Chen
IPC分类号： C23C14/34 , C23C14/54 , C23C14/58 , H01J37/34 , H01L21/285 , H01L21/321
CPC分类号： C23C14/3492 , C23C14/54 , C23C14/588 , H01J37/3435 , H01L21/2855 , H01L21/3212 , H01J2237/24585 , H01J2237/332
摘要： A method for fabricating semiconductor devices is disclosed. The method includes introducing a target in a chamber of a physical vapor deposition (PVD) system. The method includes depositing, on a substrate, a first portion of a film based on a first compensation function, a first value of the first compensation function being determined according to a lifetime of the target. The method includes depositing, on the first portion of the film, a second portion of the film based on a second compensation function, a second value of the second compensation function being determined according to the lifetime of the target. The first value is different from the second value.
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2.发明公开公开(公告)号：US20230335423A1
公开(公告)日：2023-10-19
申请号：US17723372
申请日：2022-04-18
发明人： Chia-Hsi Wang , Yen-Yu Chen
IPC分类号： H01L21/677 , H01L21/67 , C23C16/54 , C23C16/46 , C23C14/56
CPC分类号： H01L21/67742 , H01L21/67248 , C23C16/54 , C23C16/463 , C23C14/568 , H01L21/68707
摘要： A multi-chamber semiconductor processing system is provided. The multi-chamber semiconductor processing system includes: a plurality of chambers, each of the plurality of chambers corresponding to a semiconductor process; a transfer chamber; a transfer robot in the transfer chamber and having a holding member capable of holding a wafer, the transfer robot configured to transfer the wafer among the plurality of chambers; a first temperature sensor mounted on the holding member and configured to detect a transfer robot temperature; and a temperature adjustment unit mounted on the transfer robot and configured to adjust the transfer robot temperature.
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公开(公告)号：US20240055290A1
公开(公告)日：2024-02-15
申请号：US17887729
申请日：2022-08-15
发明人： Chia-Hsi Wang , Yen-Yu Chen
IPC分类号： H01L21/683 , H01L21/66 , H01L21/67
CPC分类号： H01L21/6833 , H01L22/26 , H01L21/67253
摘要： Various embodiments of the present application are directed toward an adjustable wafer chuck. The adjustable wafer chuck is configured to hold a wafer. The adjustable wafer chuck comprises a base portion and a pad portion. The base portion comprises a plurality of adjustable base structures. The pad portion is disposed on a first side of the base portion. The pad portion comprises a plurality of contact pads disposed on the plurality of adjustable base structures. Each of the adjustable base structures are configured to move along a plane in a first direction and configured to move along the plane in a second direction that is opposite the first direction.
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公开(公告)号：US10113228B2
公开(公告)日：2018-10-30
申请号：US14311074
申请日：2014-06-20
发明人： Chung-Liang Cheng , Sheng-Wei Yeh , Chia-Hsi Wang , Wei-Jen Chen , Yen-Yu Chen , Chang-Sheng Lee , Wei Zhang
IPC分类号： C23C14/34 , C23C14/06 , C23C14/00 , C23C14/54 , H01L21/285
摘要： The present disclosure provides a method for controlling a semiconductor deposition operation. The method includes (i) identifying a first target lifetime in a physical vapor deposition (PVD) system; (ii) inputting the first target lifetime into a processor; (iii) outputting, by the processor, a plurality of first operation parameters according to a plurality of compensation curves; and (iv) performing the first operation parameters in the PVD system. The first operation parameters includes, but not limited to, an RF power tuning, a DC voltage tuning, a target to chamber pedestal spacing tuning, an AC bias tuning, an impedance tuning, a reactive gas flow tuning, an inert gas flow tuning, a chamber pedestal temperature tuning, or a combination thereof.
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公开(公告)号：US20240331436A1
公开(公告)日：2024-10-03
申请号：US18190728
申请日：2023-03-27
发明人： Chia-Hsi Wang , Yen-Yu Chen
CPC分类号： G06V40/103 , G06T7/246 , G06V40/20
摘要： A method of automatically detecting whether a procedure in a scheduled process has been performed is disclosed. The method includes: capturing images of a person engaged in a plurality of predetermined steps in the scheduled process; estimating a human pose of the person in the captured images that includes a plurality of body parts of the human pose; tracking movement of the plurality of body parts of the human pose; generating a movement signal based on the tracked movement of the plurality of body parts; determining based on the movement signal whether a predetermined step of the plurality of predetermined steps in the scheduled process has been performed by the person; and recording a time at which the predetermined step of the plurality of predetermined steps in the scheduled process has been performed by the person when it has been determined that the predetermined step has been performed.
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公开(公告)号：US20230374654A1
公开(公告)日：2023-11-23
申请号：US18230669
申请日：2023-08-07
发明人： Chia-Hsi Wang , Yen-Yu Chen , Jen-Hao Chien
CPC分类号： C23C14/548 , G01N23/2273 , C23C14/067 , C23C14/3492 , C23C14/52 , C23C14/352 , C23C14/3407 , H01J37/3429 , H01J37/3447 , H01J37/345 , G01N2223/6116 , H01J37/3435 , H10N50/10
摘要： A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining parameters of the PVD system based on a target boron concentration larger than the initial boron concentration; and depositing a FeCoB film on a substrate according to the parameters of the PVD system.
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公开(公告)号：US20230032857A1
公开(公告)日：2023-02-02
申请号：US17581958
申请日：2022-01-23
发明人： Chia-Hsi Wang , Yen-Yu Chen , Jen-Hao Chien
IPC分类号： C23C16/455 , G01N23/2273 , C23C16/38 , C23C16/52
摘要： A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining parameters of the PVD system based on a target boron concentration larger than the initial boron concentration; and depositing a FeCoB film on a substrate according to the parameters of the PVD system.
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