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    Image mask film scheme and method
    2.
    发明授权
    Image mask film scheme and method 有权
    图像胶片方案和方法

    公开(公告)号：US09581894B2

    公开(公告)日：2017-02-28

    申请号：US14841141

    申请日：2015-08-31

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chih-Chiang Tu ,  Chun-Lang Chen ,  Jong-Yuh Chang ,  Boming Hsu ,  Tran-Hui Shen

    IPC: G03F1/46 ,  G03F1/48 ,  G03F1/74

    CPC classification number: G03F1/74 ,  G03F1/46 ,  G03F1/48

    Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.

    Abstract translation: 提供了修复光刻掩模的系统和方法。 一个实施例包括在衬底上的吸光层上形成屏蔽层。 一旦屏蔽层就位，可以使用例如电子束过程来修复吸光度层，以引发反应以修复吸光度层中的缺陷，屏蔽层用于屏蔽吸收层的其余部分 在修复过程中从不希望的蚀刻。

    DIRECT WRITING SYSTEM USED FOR ELECTRON BEAM LITHOGRAPHY
    3.
    发明公开
    DIRECT WRITING SYSTEM USED FOR ELECTRON BEAM LITHOGRAPHY 审中-公开

    公开(公告)号：US20240161998A1

    公开(公告)日：2024-05-16

    申请号：US18464243

    申请日：2023-09-10

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Cheng-Hsien Chou ,  Yung-Lung Lin ,  Chun Liang Chen ,  Kuan-Liang Liu ,  Chin-Yu Ku ,  Jong-Yuh Chang

    IPC: H01J37/147 ,  H01J37/317

    CPC classification number: H01J37/1472 ,  H01J37/3174

    Abstract: A deflecting plate includes a silicon-on-insulator (SOI) substrate. The SOI substrate includes: an insulator layer having a top surface and a bottom surface; a device layer coupled to the insulator layer at the top surface, wherein multiple deflecting apertures are disposed in the device layer, each of which extending from a top open end to a bottom open end through the device layer, and wherein the bottom open end is coplanar with the top surface of the insulator layer; and a handle substrate coupled to the insulator layer at the bottom surface, wherein a cavity is disposed in the handle substrate and extends from a cavity open end to a cavity bottom wall, and wherein the bottom wall is coplanar with the top surface of the insulator layer, such that the bottom open end of each deflecting aperture is exposed to the cavity.

    Image Mask Film Scheme and Method
    4.
    发明申请
    Image Mask Film Scheme and Method 审中-公开
    影像膜片方案及方法

    公开(公告)号：US20150370158A1

    公开(公告)日：2015-12-24

    申请号：US14841141

    申请日：2015-08-31

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chih-Chiang Tu ,  Chun-Lang Chen ,  Jong-Yuh Chang ,  Boming Hsu ,  Tran-Hui Shen

    IPC: G03F1/48 ,  G03F1/46

    CPC classification number: G03F1/74 ,  G03F1/46 ,  G03F1/48

    Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.

    Abstract translation: 提供了修复光刻掩模的系统和方法。 一个实施例包括在衬底上的吸光层上形成屏蔽层。 一旦屏蔽层就位，可以使用例如电子束过程来修复吸光度层，以引发反应以修复吸光度层中的缺陷，屏蔽层用于屏蔽吸收层的其余部分 在修复过程中从不希望的蚀刻。

    Image mask film scheme and method
    5.
    发明授权
    Image mask film scheme and method 有权
    图像胶片方案和方法

    公开(公告)号：US09122175B2

    公开(公告)日：2015-09-01

    申请号：US13649850

    申请日：2012-10-11

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chih-Chiang Tu ,  Chun-Lang Chen ,  Jong-Yuh Chang ,  Boming Hsu ,  Tran-Hui Shen

    IPC: G03F1/48 ,  G03F1/74

    CPC classification number: G03F1/74 ,  G03F1/46 ,  G03F1/48

    Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.

    Abstract translation: 提供了修复光刻掩模的系统和方法。 一个实施例包括在衬底上的吸光层上形成屏蔽层。 一旦屏蔽层就位，可以使用例如电子束过程来修复吸光度层，以引发反应以修复吸光度层中的缺陷，屏蔽层用于屏蔽吸收层的其余部分 在修复过程中从不希望的蚀刻。

    Systems and methods for lithography masks
    8.
    发明授权
    Systems and methods for lithography masks 有权
    光刻掩模的系统和方法

    公开(公告)号：US09057961B2

    公开(公告)日：2015-06-16

    申请号：US14336231

    申请日：2014-07-21

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chih-Chiang Tu ,  Hsin-Chang Lee ,  Jong-Yuh Chang ,  Chia-Jen Chen ,  Chun-Lang Chen

    IPC: G03F1/00 ,  G03F1/36 ,  G03F1/50 ,  G03F1/58 ,  G03F1/80

    CPC classification number: G03F1/36 ,  G03F1/50 ,  G03F1/58 ,  G03F1/80

    Abstract: Structure of mask blanks and masks, and methods of making masks are disclosed. The new mask blank and mask comprise a tripe etching stop layer to prevent damages to the quartz substrate when the process goes through etching steps three times. The triple etching stop layer may comprise a first sub-layer of tantalum containing nitrogen (TaN), a second sub-layer of tantalum containing oxygen (TaO), and a third sub-layer of TaN. Alternatively, the triple etching stop layer may comprise a first sub-layer of SiON material, a second sub-layer of TaO material, and a third sub-layer of SiON material. Another alternative may be one layer of low etching rate MoxSiyONz material which can prevent damages to the quartz substrate when the process goes through etching steps three times. The island mask is defined on the mask blank by using various optical proximity correction rules.

    Abstract translation: 公开了掩模毛坯和掩模的结构，以及制造掩模的方法。 当过程经过蚀刻步骤三次时，新的掩模坯料和掩模包括三层蚀刻停止层，以防止损坏石英基板。 三重蚀刻停止层可以包括含有氮（TaN）的钽的第一子层，含有氧（TaO）的钽的第二子层和TaN的第三子层。 或者，三重蚀刻停止层可以包括SiON材料的第一子层，TaO材料的第二子层和SiON材料的第三子层。 另一个替代方案可以是一层低蚀刻速率的MoxSiyONz材料，当该工艺经过蚀刻步骤三次时，其可以防止对石英衬底的损坏。 通过使用各种光学邻近校正规则在掩模空白上定义岛掩模。

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