公开(公告)号：US20220350236A1

公开(公告)日：2022-11-03

申请号：US17865294

申请日：2022-07-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Minfeng CHEN ,  Shuo-Yen CHOU

IPC: G03F1/24

Abstract: An extreme ultraviolet mask, comprising an absorber having an index of refraction ranging from 0.87 to 1.02, an extinction coefficient ranging from 0.065 to 0.085, and a thickness ranging from 33.5 nm to 43.5 nm.

公开(公告)号：US20220260931A1

公开(公告)日：2022-08-18

申请号：US17733664

申请日：2022-04-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Shinn-Sheng YU ,  Ru-Gun LIU ,  Hsu-Ting HUANG ,  Kenji YAMAZOE ,  Minfeng CHEN ,  Shuo-Yen CHOU ,  Chin-Hsiang LIN

IPC: G03F7/20

Abstract: A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)−2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.

公开(公告)号：US20210080822A1

公开(公告)日：2021-03-18

申请号：US17101595

申请日：2020-11-23

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Shih-Ming CHANG ,  Minfeng CHEN ,  Min-An YANG ,  Shao-Chi WEI

IPC: G03F1/58 ,  G03F1/24 ,  G03F7/20 ,  H01L21/027 ,  G03F1/72 ,  G03F1/36

Abstract: A method for forming a photomask is provided. The method includes forming a light blocking layer over a transparent substrate. The light blocking layer has a first portion, a second portion, and a connection portion. The method includes forming a mask layer over the first portion and the second portion of the light blocking layer. The method includes removing the connection portion. The method includes removing the mask layer. The second portion of the light blocking layer is removed during removing the mask layer, while the first portion remains. The method includes after removing the mask layer and the second portion, removing the third portion of the transparent substrate to form a first recess in the transparent substrate. The method includes forming a light blocking structure in the first recess.

公开(公告)号：US20230333486A1

公开(公告)日：2023-10-19

申请号：US18206970

申请日：2023-06-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Shinn-Sheng YU ,  Ru-Gun LIU ,  Hsu-Ting HUANG ,  Kenji YAMAZOE ,  Minfeng CHEN ,  Shuo-Yen CHOU ,  Chin-Hsiang LIN

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G03F7/2004 ,  G03F7/2022 ,  G03F7/70558

Abstract: A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)-2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.

公开(公告)号：US20240393690A1

公开(公告)日：2024-11-28

申请号：US18790799

申请日：2024-07-31

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Tse LAI ,  Minfeng CHEN ,  Ya Hui CHANG

IPC: G03F7/09 ,  G03F7/20 ,  H01L21/027 ,  H01L21/311

Abstract: A method of manufacturing a semiconductor device includes forming a target layer over a substrate and forming a chemically amplified photoresist layer over the target layer. The method further includes forming a metallic photoresist layer over the chemically amplified photoresist layer, and selectively exposing the metallic photoresist layer to actinic radiation. The method also includes removing portions of the metallic photoresist layer that were not exposed to the actinic radiation to form a patterned metallic photoresist layer, and flood exposing the patterned metallic photoresist layer and the chemically amplified photoresist layer to extreme ultraviolet (XUV) radiation. The method further includes removing portions of the chemically amplified photoresist layer not covered by the patterned metallic photoresist layer and the patterned metallic photoresist layer to form a patterned chemically amplified photoresist layer exposing portions of the target layer.