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公开(公告)号：US08591752B2
公开(公告)日：2013-11-26
申请号：US13399030
申请日：2012-02-17
CPC分类号： H01J37/321 , C23F4/00 , C23G5/00 , H01J2237/334 , H01L43/12
摘要： A method for plasma-etching a magnetic film and plasma-cleaning, in which deposits in an etching processing chamber are efficiently removed while corrosion of a wafer is suppressed, is provided. A plasma processing method for plasma-etching a to-be-processed substrate having a magnetic film in an etching processing chamber includes the steps of plasma-etching the magnetic film using a first gas not containing chlorine, transferring out the to-be-processed substrate from the etching processing chamber, first plasma-cleaning of the etching processing chamber using a second gas containing chlorine, and second plasma-cleaning using a third gas containing hydrogen after the first plasma cleaning.
摘要翻译： 提供了一种用于等离子体蚀刻磁性膜和等离子体清洁的方法，其中在蚀刻处理室中的沉积物被有效地去除，同时腐蚀晶片被抑制。 在蚀刻处理室中对具有磁性膜的被处理基板进行等离子体蚀刻的等离子体处理方法包括使用不含氯的第一气体等离子体蚀刻磁性膜的步骤，将待处理的 来自蚀刻处理室的衬底，首先使用含氯的第二气体对蚀刻处理室进行等离子体清洁，以及在第一等离子体清洗之后使用含有氢的第三气体进行第二等离子体清洁。
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公开(公告)号：US20130146563A1
公开(公告)日：2013-06-13
申请号：US13399030
申请日：2012-02-17
IPC分类号： H01F41/00
CPC分类号： H01J37/321 , C23F4/00 , C23G5/00 , H01J2237/334 , H01L43/12
摘要： A method for plasma-etching a magnetic film and plasma-cleaning, in which deposits in an etching processing chamber are efficiently removed while corrosion of a wafer is suppressed, is provided. A plasma processing method for plasma-etching a to-be-processed substrate having a magnetic film in an etching processing chamber includes the steps of plasma-etching the magnetic film using a first gas not containing chlorine, transferring out the to-be-processed substrate from the etching processing chamber, first plasma-cleaning of the etching processing chamber using a second gas containing chlorine, and second plasma-cleaning using a third gas containing hydrogen after the first plasma cleaning.
摘要翻译： 提供了一种用于等离子体蚀刻磁性膜和等离子体清洁的方法，其中在蚀刻处理室中的沉积物被有效地去除，同时腐蚀晶片被抑制。 在蚀刻处理室中对具有磁性膜的被处理基板进行等离子体蚀刻的等离子体处理方法包括使用不含氯的第一气体等离子体蚀刻磁性膜的步骤，将待处理的 来自蚀刻处理室的衬底，首先使用含氯的第二气体对蚀刻处理室进行等离子体清洁，以及在第一等离子体清洗之后使用含有氢的第三气体进行第二等离子体清洁。
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公开(公告)号：US20120103933A1
公开(公告)日：2012-05-03
申请号：US13011019
申请日：2011-01-21
申请人： Kentaro YAMADA , Takeshi Shimada , Takahiro Abe
发明人： Kentaro YAMADA , Takeshi Shimada , Takahiro Abe
CPC分类号： G11B5/3163 , C23F4/00 , H01F41/34
摘要： In a plasma processing method of dry-etching of a magnetic film having a thickness of 200 nm to 500 nm, a plasma processing method of dry-etching of a sample having the magnetic film on which a multilayered film including a resist film, an non-organic film underlying the resist film, a Cr film underlying the non-organic film, and an Al2O3 film underlying the Cr film.
摘要翻译： 在对具有200nm〜500nm的厚度的磁性膜进行干法蚀刻的等离子体处理方法中，对具有含有抗蚀剂膜的多层膜的磁性膜的试样的干法蚀刻等离子体处理方法， - 抗蚀剂膜下面的无机膜，非有机膜下面的Cr膜和Cr膜下面的Al 2 O 3膜。
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公开(公告)号：US09070388B2
公开(公告)日：2015-06-30
申请号：US13011019
申请日：2011-01-21
申请人： Kentaro Yamada , Takeshi Shimada , Takahiro Abe
发明人： Kentaro Yamada , Takeshi Shimada , Takahiro Abe
IPC分类号： C03C15/00 , C03C25/68 , C23F1/00 , B44C1/22 , H01L21/302 , H01L21/461 , G11B5/31 , C23F4/00 , H01F41/34
CPC分类号： G11B5/3163 , C23F4/00 , H01F41/34
摘要： In a plasma processing method of dry-etching of a magnetic film having a thickness of 200 nm to 500 nm, a plasma processing method of dry-etching of a sample having the magnetic film on which a multilayered film including a resist film, an non-organic film underlying the resist film, a Cr film underlying the non-organic film, and an Al2O3 film underlying the Cr film.
摘要翻译： 在对200nm〜500nm的厚度的磁性膜进行干蚀刻的等离子体处理方法中，对具有含有抗蚀剂膜的多层膜的磁性膜的试样进行干法蚀刻的等离子体处理方法， - 抗蚀剂膜下面的无机膜，非有机膜下面的Cr膜和Cr膜下面的Al 2 O 3膜。
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公开(公告)号：US20090078676A1
公开(公告)日：2009-03-26
申请号：US12022207
申请日：2008-01-30
申请人： Kentaro YAMADA , Takeshi Shimada , Kotaro Fujimoto
发明人： Kentaro YAMADA , Takeshi Shimada , Kotaro Fujimoto
IPC分类号： C23F1/00
CPC分类号： C23F4/00 , G11B5/3163
摘要： The invention provides a dry etching method for processing a wafer having an Ru film formed on a thick Al2O3 film to be used for a magnetic head, capable of realizing high selectivity. In the etching of a wafer having disposed on an NiCr film 15 an Al2O3 film 14, an Ru film 13, an SiO2 film 12 and a resist mask 11, the Ru film 13 is etched via plasma using a processing gas containing Cl2 and O2 (FIG. 1(c)), and thereafter, the Ru film 13 is used as a mask to etch the Al2O3 film 14 via plasma using a gas mixture mainly containing BCl3 and also containing Cl2 and Ar (FIG. 1(d)).
摘要翻译： 本发明提供了一种用于处理具有形成在用于磁头的厚Al 2 O 3膜上的Ru膜的晶片的干蚀刻方法，其能够实现高选择性。 在设置在NiCr膜15上的Al 2 O 3膜14，Ru膜13，SiO 2膜12和抗蚀剂掩模11的晶片的蚀刻中，使用含有Cl 2和O 2的处理气体等离子体蚀刻Ru膜13 然后，使用Ru膜13作为掩模，使用主要含有BCl 3的气体混合物，还含有Cl 2和Ar（图1（d））的等离子体来蚀刻Al 2 O 3膜14。
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公开(公告)号：US08506834B2
公开(公告)日：2013-08-13
申请号：US12022207
申请日：2008-01-30
申请人： Kentaro Yamada , Takeshi Shimada , Kotaro Fujimoto
发明人： Kentaro Yamada , Takeshi Shimada , Kotaro Fujimoto
CPC分类号： C23F4/00 , G11B5/3163
摘要： The invention provides a dry etching method for processing a wafer having an Ru film formed on a thick Al2O3 film to be used for a magnetic head, capable of realizing high selectivity. In the etching of a wafer having disposed on an NiCr film 15 an Al2O3 film 14, an Ru film 13, an SiO2 film 12 and a resist mask 11, the Ru film 13 is etched via plasma using a processing gas containing Cl2 and O2 (FIG. 1(c)), and thereafter, the Ru film 13 is used as a mask to etch the Al2O3 film 14 via plasma using a gas mixture mainly containing BCl3 and also containing Cl2 and Ar (FIG. 1(d)).
摘要翻译： 本发明提供了一种用于处理具有形成在用于磁头的厚Al 2 O 3膜上的Ru膜的晶片的干蚀刻方法，其能够实现高选择性。 在设置在NiCr膜15上的Al 2 O 3膜14，Ru膜13，SiO 2膜12和抗蚀剂掩模11的晶片的蚀刻中，使用含有Cl 2和O 2的处理气体等离子体蚀刻Ru膜13 然后，使用Ru膜13作为掩模，使用主要含有BCl 3的气体混合物，还含有Cl 2和Ar（图1（d））的等离子体来蚀刻Al 2 O 3膜14。
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公开(公告)号：US20060191555A1
公开(公告)日：2006-08-31
申请号：US11203092
申请日：2005-08-15
CPC分类号： B08B7/0035
摘要： To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition. Each time one workpiece with a metal film is etched (S1), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S2), performing a first step of plasma processing using oxygen (O2) and carbon tetrafluoride (CF4) to remove a carbon-based deposit pile (S3), and performing a second step of plasma processing using boron trichloride (BCl3) and chlorine (Cl2) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S4).
摘要翻译： 为了提供一种用于金属膜的蚀刻装置的清洁方法，其有效地去除在蚀刻处理室中沉积的蚀刻残留物，确保蚀刻性能的再现性，并且使蚀刻处理室保持在低灰尘发射状态。 每次蚀刻具有金属膜的工件（S 1）时，通过用虚设衬底（S 2）代替工件来清洁真空室的内部，使用氧气进行等离子体处理的第一步骤（O < 2）和四氟化碳（CF 4 SO 4）以除去碳基沉积堆（S 3），并且使用三氯化硼（BCl 3）进行等离子体处理的第二步骤 和氯（Cl 2 O 2），以除去第一步骤不能除去的残余物和金属膜的蚀刻残留物（S 4）。
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公开(公告)号：US20110111602A1
公开(公告)日：2011-05-12
申请号：US12694386
申请日：2010-01-27
IPC分类号： H01L21/3065
CPC分类号： H01L21/31122 , H01J37/321 , H01L21/32136
摘要： Disclosed is a plasma processing method that excels in mass production consistency as it suppresses the flaking of a reaction product deposited on a portion outside the effective range of a Faraday shield in a vacuum vessel. The plasma processing method, which plasma-processes a sample having a layer made of an etch-resistant material by using a plasma processing apparatus having a discharger and a processor, includes a first step of performing an aging process that is to be performed before etching the sample, a second step of performing etching by plasma-processing the layer that is made of an etch-resistant material and formed on the sample, a third step of stabilizing a film deposited on the inner wall of a chamber forming the processor by performing plasma processing after the second step, and an additional step of repeating the second step and the third step.
摘要翻译： 公开了一种在大规模生产一致性方面优异的等离子体处理方法，因为它抑制沉积在真空容器中法拉第屏蔽有效范围之外的部分上的反应产物的剥落。 通过使用具有放电器和处理器的等离子体处理装置等离子体处理具有由耐蚀刻材料制成的层的样品的等离子体处理方法包括执行蚀刻之前要进行的时效处理的第一步骤 样品，通过等离子体处理由抗蚀刻材料制成并形成在样品上的层进行蚀刻的第二步骤，通过执行沉积在形成处理器的室的内壁上的膜来稳定沉积的第三步骤 第二步之后的等离子体处理，以及重复第二步骤和第三步骤的附加步骤。
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公开(公告)号：US07662235B2
公开(公告)日：2010-02-16
申请号：US11203092
申请日：2005-08-15
CPC分类号： B08B7/0035
摘要： To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition.Each time one workpiece with a metal film is etched (S1), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S2), performing a first step of plasma processing using oxygen (O2) and carbon tetrafluoride (CF4) to remove a carbon-based deposit pile (S3), and performing a second step of plasma processing using boron trichloride (BCl3) and chlorine (Cl2) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S4).
摘要翻译： 为了提供一种用于金属膜的蚀刻装置的清洁方法，其有效地去除在蚀刻处理室中沉积的蚀刻残留物，确保蚀刻性能的再现性，并且使蚀刻处理室保持在低灰尘发射状态。 每次蚀刻具有金属膜的一个工件（S1），通过用虚设衬底（S2）代替工件来清洁真空室的内部，使用氧（O 2）和四氟化碳（O 2）进行等离子体处理的第一步骤 CF4）以除去碳基沉积堆（S3），并且使用三氯化硼（BCl 3）和氯（Cl 2）进行等离子体处理的第二步骤，以除去第一步骤中不能除去的残留物和蚀刻残留物 的金属膜（S4）。
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公开(公告)号：US08900401B2
公开(公告)日：2014-12-02
申请号：US12846403
申请日：2010-07-29
申请人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
发明人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
IPC分类号： H01L21/306 , H01J37/32
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32192 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J2237/1825 , H01J2237/327 , H01L21/67069 , H01L21/67242 , H05H1/46
摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
摘要翻译： 在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置 气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。 多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。 然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。 当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。
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