-
公开(公告)号：US09178075B2
公开(公告)日：2015-11-03
申请号：US13984931
申请日：2012-02-27
IPC分类号： H01L29/02 , H01L29/786 , H01L29/66
CPC分类号： H01L29/78693 , H01L29/66742 , H01L29/66765 , H01L29/78678
摘要： A thin-film semiconductor device includes a gate electrode formed above a substrate; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed above the gate insulating film and having a channel region; a channel protective layer formed above the semiconductor layer and containing an organic material which includes silicon, oxygen, and carbon; an interfacial layer which is formed in contact with the channel protective layer between the semiconductor layer and the channel protective layer, and which includes carbon as a major component, the carbon originating from the organic material; and a source electrode and a drain electrode which are electrically connected to the semiconductor layer.
摘要翻译： 薄膜半导体器件包括形成在衬底上的栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 形成在所述栅极绝缘膜的上方并具有沟道区域的半导体层; 沟道保护层，其形成在所述半导体层上方并且含有包含硅，氧和碳的有机材料; 形成为与半导体层和沟道保护层之间的沟道保护层接触并且包括碳作为主要成分的界面层，来自有机材料的碳; 以及与半导体层电连接的源电极和漏电极。
-
公开(公告)号：US20130320339A1
公开(公告)日：2013-12-05
申请号：US13984931
申请日：2012-02-27
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/78693 , H01L29/66742 , H01L29/66765 , H01L29/78678
摘要： A thin-film semiconductor device includes a gate electrode formed above a substrate; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed above the gate insulating film and having a channel region; a channel protective layer formed above the semiconductor layer and containing an organic material which includes silicon, oxygen, and carbon; an interfacial layer which is formed in contact with the channel protective layer between the semiconductor layer and the channel protective layer, and which includes carbon as a major component, the carbon originating from the organic material; and a source electrode and a drain electrode which are electrically connected to the semiconductor layer.
摘要翻译： 薄膜半导体器件包括形成在衬底上的栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 形成在所述栅极绝缘膜的上方并具有沟道区域的半导体层; 沟道保护层，其形成在所述半导体层上方并且含有包含硅，氧和碳的有机材料; 形成为与半导体层和沟道保护层之间的沟道保护层接触并且包括碳作为主要成分的界面层，来自有机材料的碳; 以及与半导体层电连接的源电极和漏电极。
-
公开(公告)号：US08598584B2
公开(公告)日：2013-12-03
申请号：US13274546
申请日：2011-10-17
申请人： Hisao Nagai , Sadayoshi Hotta , Genshiro Kawachi
发明人： Hisao Nagai , Sadayoshi Hotta , Genshiro Kawachi
IPC分类号： H01L33/08 , H01L21/336
CPC分类号： H01L29/78636 , H01L29/41733 , H01L29/66757 , H01L29/78666 , H01L29/78675 , H01L29/78696
摘要： In the thin-film transistor device: the stacked thickness of either a source electrode or a drain electrode and a corresponding one of silicon layers is the same value or a value close to the same value as the stacked thickness of a first channel layer and a second channel layer; the stacked thickness of the first channel layer and the second channel layer is the same in a region between the source electrode and the drain electrode and above the source electrode and the drain electrode; the first channel layer and the second channel layer are sunken in the region between the source electrode and the drain electrode, following a shape between the source electrode and the drain electrode; and the gate electrode has one region overlapping with the source electrode and an other region overlapping with the drain electrode.
摘要翻译： 在薄膜晶体管器件中：源电极或漏电极以及相应的一层硅层的层叠厚度与第一沟道层和第二沟道层的层叠厚度相同的值或接近于相同值的值 第二通道层; 第一沟道层和第二沟道层的堆叠厚度在源极和漏极之间以及源电极和漏电极之间的区域中相同; 第一沟道层和第二沟道层在源极和漏极之间的区域中凹陷，源于源极和漏极之间的形状; 并且栅电极具有与源电极重叠的一个区域和与漏电极重叠的其他区域。
-
公开(公告)号：US08377723B2
公开(公告)日：2013-02-19
申请号：US13337601
申请日：2011-12-27
申请人： Hisao Nagai , Eiichi Satoh , Toshiyuki Aoyama
发明人： Hisao Nagai , Eiichi Satoh , Toshiyuki Aoyama
IPC分类号： H01L33/16
CPC分类号： H01L29/78696 , H01L29/66765 , H01L29/78669 , H01L29/78678
摘要： Provided is a method of manufacturing a TFT substrate for preventing characteristics of a native oxide layer in a boundary between a microcrystal semiconductor layer and an amorphous semiconductor layer from being degraded. The method includes forming a gate electrode, forming a gate insulating film, modifying the formed first amorphous silicon thin film into a first crystalline silicon thin film, removing a silicon oxide layer on the surface of the first crystalline silicon thin film, forming the second amorphous silicon thin film, and dry etching the first crystalline silicon thin film and the second amorphous silicon thin film, and it is determined whether or not the in-process TFT substrate after the dry etching is returned to the processes after the dry etching by measuring the emission intensity of radicals in plasma during the dry etching and detecting the presence or absence of the silicon oxide layer in the boundary.
摘要翻译： 提供一种制造用于防止微晶半导体层和非晶半导体层之间的边界中的自然氧化物层的特性降低的TFT基板的方法。 该方法包括形成栅电极，形成栅极绝缘膜，将形成的第一非晶硅薄膜修饰为第一晶体硅薄膜，去除第一晶体硅薄膜表面上的氧化硅层，形成第二非晶硅 硅薄膜，并且干蚀刻第一晶体硅薄膜和第二非晶硅薄膜，并且确定在干蚀刻之后的工艺中的TFT基板是否在干法蚀刻之后通过测量 干蚀刻期间等离子体中自由基的发射强度，并检测边界中是否存在氧化硅层。
-
公开(公告)号：US08237359B2
公开(公告)日：2012-08-07
申请号：US12490673
申请日：2009-06-24
IPC分类号： H01J1/62
CPC分类号： H01L27/3253 , G09G3/3225 , G09G2300/023 , G09G2300/0426 , G09G2300/0443 , G09G2300/0452 , H01L27/3211
摘要： There is provided a display apparatus configured by stacking a drive circuit substrate and a light-emitting substrate. Electrodes of the substrates are accurately aligned to be electrically connected to each other. A display apparatus is configured by stacking a drive circuit substrate having a drive circuit and a light-emitting substrate having a light-emitting unit including a pixel electrode to cause the drive circuit substrate and the light-emitting substrate to face each other, wherein on a stacked plane between the drive circuit substrate and the light-emitting substrate, an intermediate electrode connected to the light-emitting unit of the light-emitting substrate and a connection electrode connected to the drive circuit and the drive circuit substrate are electrically connected to each other, and the intermediate electrode is elongated in a direction parallel to or perpendicular to a longitudinal direction of the pixel electrode on the stacked plane.
摘要翻译： 提供了一种通过堆叠驱动电路基板和发光基板而构成的显示装置。 基板的电极被精确对准以彼此电连接。 显示装置通过堆叠具有驱动电路的驱动电路基板和具有包括像素电极的发光单元的发光基板来使驱动电路基板和发光基板彼此面对，其中， 在驱动电路基板和发光基板之间的层叠平面，连接到发光基板的发光单元的中间电极和连接到驱动电路和驱动电路基板的连接电极电连接到每个 另一方面，并且中间电极在与堆叠平面上的像素电极的纵向方向平行或垂直的方向上伸长。
-
公开(公告)号：US20100095889A1
公开(公告)日：2010-04-22
申请号：US12539949
申请日：2009-08-12
申请人： Takayuki Kai , Tomohiro Okumura , Hisao Nagai
发明人： Takayuki Kai , Tomohiro Okumura , Hisao Nagai
IPC分类号： C23C16/54
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32357 , H01J37/32467
摘要： There are installed, on a surface of an window on a vacuum chamber side, an insulating side face portion, which extends radially from the center of a generating unit of a plasma generating device and is disposed so as to be orthogonal to a substrate mounting face of an electrode, and a conductive layer, which is made of a material identical to that for the substrate and placed in an area corresponding to the generating unit on the surface of the window on the vacuum chamber side.
摘要翻译： 在真空室一侧的窗的表面上安装有绝缘侧面部，该绝缘侧面部从等离子体发生装置的发电机组的中心径向延伸，并与基板安装面正交地配置 电极和导电层，其由与基板相同的材料制成并且放置在与真空室侧的窗口的表面上的与发生单元相对应的区域中。
-
公开(公告)号：US20090272999A1
公开(公告)日：2009-11-05
申请号：US12305796
申请日：2008-05-21
CPC分类号： H01L27/3246 , H01L27/3283 , H01L51/0003 , H01L51/0037 , H01L51/0545 , H01L51/5048
摘要： An organic EL display panel having a functional layer with a uniform film thickness is provided. The organic EL display panel of the present invention contains an anode electrode set on a substrate; line-state banks set on the substrate on which the anode electrode is set and defining a line-state region; a hole transport layers arranged in matrix state on the substrate, the hole transport layer being set in the line-state region; a line-state interlayer set in the line-state region; a line-state organic EL layer set in the line-state region; and a cathode electrode provided on the organic EL layer, and the bank contains a fluorine resin.
摘要翻译： 提供了具有均匀膜厚的功能层的有机EL显示面板。 本发明的有机EL显示面板包含设置在基板上的阳极电极; 线状态组设置在其上设置有阳极电极并限定线状态区域的衬底上; 在基板上以矩阵状布置的空穴传输层，空穴传输层设置在线状态区域中; 在线状态区中设置线状中间层; 设置在线状态区域中的线状有机EL层; 以及设置在有机EL层上的阴极，该堤包含氟树脂。
-
8.发明授权Organic EL element having forward tapered banks containing fluorine resin and manufacturing method thereof 有权具有含有氟树脂的正锥形组的有机EL元件及其制造方法公开(公告)号：US08217573B2
公开(公告)日：2012-07-10
申请号：US13035024
申请日：2011-02-25
CPC分类号： H01L27/3246 , H01L27/3283 , H01L51/0003 , H01L51/0037 , H01L51/0545 , H01L51/5048
摘要： An organic EL element having a functional layer with a uniform film thickness is provided. The organic EL element of the present invention contains a substrate; an anode electrode set on the substrate; an organic EL layer set on the anode electrode; a cathode electrode set on the organic EL layer; and a bank having a forward tapered shape, which define the organic EL layer. The bank contains a fluorine resin, the fluorine concentration at a top of the bank is higher than the fluorine concentration at a bottom surface of the bank, and a height of the top of the bank from the substrate is 0.8 to 1.2 μm.
摘要翻译： 提供了具有均匀膜厚的功能层的有机EL元件。 本发明的有机EL元件含有基材; 设置在所述基板上的阳极电极; 设置在阳极电极上的有机EL层; 设置在有机EL层上的阴极电极; 以及限定有机EL层的具有前锥形形状的堤。 该堤包含氟树脂，该堤顶部的氟浓度高于堤岸底面的氟浓度，堤岸顶部的高度为0.8〜1.2μm。
-
公开(公告)号：US20100213442A1
公开(公告)日：2010-08-26
申请号：US12159485
申请日：2007-12-14
申请人： Hidehiro Yoshida , Hisao Nagai , Yoshiro Kitamura
发明人： Hidehiro Yoshida , Hisao Nagai , Yoshiro Kitamura
CPC分类号： H01L51/0003 , H01L51/0545
摘要： Provided is a semiconductor device comprising an organic semiconductor element A and an organic semiconductor element B, wherein the organic semiconductor element A has a source electrode and a drain electrode disposed on a surface of a substrate; a channel gap disconnecting the source electrode and the drain electrode; an organic semiconductor layer disposed on the source electrode, the drain electrode and the channel gap; an insulating film disposed on the organic semiconductor layer; a gate electrode disposed on the insulating film; a bank defining the organic semiconductor layer; a and groove through the bank, a distance between the apex of the bank and the surface of a substrate is greater than a distance between the apex of the channel gap and the surface of the substrate, and the organic semiconductor element B has a source electrode or a drain electrode connected with the gate electrode of the organic semiconductor element A via the groove through the bank of the organic semiconductor element A.
摘要翻译： 提供一种包含有机半导体元件A和有机半导体元件B的半导体器件，其中有机半导体元件A具有设置在基板的表面上的源电极和漏电极; 沟道间隙切断源电极和漏电极; 设置在源电极，漏电极和沟道间隙上的有机半导体层; 设置在有机半导体层上的绝缘膜; 设置在所述绝缘膜上的栅电极; 限定有机半导体层的堤; a和沟槽穿过堤岸，堤岸的顶点和基底表面之间的距离大于沟道间隙的顶点与基底的表面之间的距离，有机半导体元件B具有源电极 或通过有机半导体元件A的堤经由沟槽与有机半导体元件A的栅电极连接的漏电极。
-
公开(公告)号：US20090284146A1
公开(公告)日：2009-11-19
申请号：US12507134
申请日：2009-07-22
IPC分类号： H01J1/63
CPC分类号： H01L27/3246 , H01L27/3283 , H01L51/0003 , H01L51/0037 , H01L51/0545 , H01L51/5048
摘要： An organic EL display panel having a functional layer with a uniform film thickness is provided. The organic EL display panel of the present invention contains anode electrodes set on the substrate; organic EL layers set on the anode electrodes; line-state banks defining the organic EL layers in a line-state region; second banks defining two or more regions in the line-state region. The line-state banks and the second banks contain a fluorine resin, a fluorine concentration of the fluorine resin gradually changes along a thickness direction of each of the line-state bank and the second bank, and the fluorine concentration at a top of each of the line-state bank and the second bank is higher than the fluorine concentration at a bottom surface of each of the line-state bank and the second bank.
摘要翻译： 提供了具有均匀膜厚的功能层的有机EL显示面板。 本发明的有机EL显示面板包含设置在基板上的阳极电极; 设置在阳极上的有机EL层; 线状态银行定义线状态区域中的有机EL层; 在线状态区域中定义两个或多个区域的第二个银行。 线状态组和第二组包含氟树脂，氟树脂的氟浓度沿着每个线状组和第二组的厚度方向逐渐变化，并且每个的顶部的氟浓度 线状态库和第二存储体高于各状态库和第二存储体的底面的氟浓度。
-
-
-
-
-
-
-
-
-
搜索结果
35 条记录 (耗时 0.031 秒)
