公开(公告)号：US09178075B2

公开(公告)日：2015-11-03

申请号：US13984931

申请日：2012-02-27

申请人： Takahiro Kawashima ,  Hisao Nagai ,  Eiichi Satoh ,  Yuji Kishida ,  Genshiro Kawachi

发明人： Takahiro Kawashima ,  Hisao Nagai ,  Eiichi Satoh ,  Yuji Kishida ,  Genshiro Kawachi

IPC分类号： H01L29/02 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L29/78693 ,  H01L29/66742 ,  H01L29/66765 ,  H01L29/78678

摘要： A thin-film semiconductor device includes a gate electrode formed above a substrate; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed above the gate insulating film and having a channel region; a channel protective layer formed above the semiconductor layer and containing an organic material which includes silicon, oxygen, and carbon; an interfacial layer which is formed in contact with the channel protective layer between the semiconductor layer and the channel protective layer, and which includes carbon as a major component, the carbon originating from the organic material; and a source electrode and a drain electrode which are electrically connected to the semiconductor layer.

摘要翻译： 薄膜半导体器件包括形成在衬底上的栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 形成在所述栅极绝缘膜的上方并具有沟道区域的半导体层; 沟道保护层，其形成在所述半导体层上方并且含有包含硅，氧和碳的有机材料; 形成为与半导体层和沟道保护层之间的沟道保护层接触并且包括碳作为主要成分的界面层，来自有机材料的碳; 以及与半导体层电连接的源电极和漏电极。

公开(公告)号：US20130320339A1

公开(公告)日：2013-12-05

申请号：US13984931

申请日：2012-02-27

申请人： Takahiro Kawashima ,  Hisao Nagai ,  Eiichi Satoh ,  Yuji Kishida ,  Genshiro Kawachi

发明人： Takahiro Kawashima ,  Hisao Nagai ,  Eiichi Satoh ,  Yuji Kishida ,  Genshiro Kawachi

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/78693 ,  H01L29/66742 ,  H01L29/66765 ,  H01L29/78678

摘要： A thin-film semiconductor device includes a gate electrode formed above a substrate; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed above the gate insulating film and having a channel region; a channel protective layer formed above the semiconductor layer and containing an organic material which includes silicon, oxygen, and carbon; an interfacial layer which is formed in contact with the channel protective layer between the semiconductor layer and the channel protective layer, and which includes carbon as a major component, the carbon originating from the organic material; and a source electrode and a drain electrode which are electrically connected to the semiconductor layer.

摘要翻译： 薄膜半导体器件包括形成在衬底上的栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 形成在所述栅极绝缘膜的上方并具有沟道区域的半导体层; 沟道保护层，其形成在所述半导体层上方并且含有包含硅，氧和碳的有机材料; 形成为与半导体层和沟道保护层之间的沟道保护层接触并且包括碳作为主要成分的界面层，来自有机材料的碳; 以及与半导体层电连接的源电极和漏电极。

公开(公告)号：US20140167165A1

公开(公告)日：2014-06-19

申请号：US14236698

申请日：2013-05-29

申请人： Yuji Kishida ,  Eiichi Satoh ,  Takahiro Kawashima

发明人： Yuji Kishida ,  Eiichi Satoh ,  Takahiro Kawashima

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/786 ,  H01L21/76829 ,  H01L27/1248 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/66765

摘要： A thin-film transistor includes: a gate electrode above a substrate; a gate insulating layer above the gate electrode; a semiconductor layer opposed to the gate electrode with the gate insulating layer therebetween; a protective layer above the semiconductor layer and comprising an organic material; and a source electrode and a drain electrode each of which has at least a portion located above the protective layer. The protective layer includes an altered layer which has at least a portion contacting the semiconductor layer, and which is generated by alteration of a surface layer of the protective layer in a region exposed from the source electrode and the drain electrode. A relational expression of Log10 Nt≦0.0556θ+16.86 is satisfied where Nt (cm−3) represents a defect density of the semiconductor layer and θ (°) represents a taper angle of an edge portion of the protective layer.

摘要翻译： 薄膜晶体管包括：在基板上方的栅电极; 栅电极上方的栅极绝缘层; 与栅电极相对的半导体层，其间具有栅极绝缘层; 在所述半导体层上方的保护层，并且包含有机材料; 以及源极电极和漏极电极，每个源电极和漏电极具有位于保护层上方的至少一部分。 保护层包括具有至少部分与半导体层接触的部分的改变的层，其是通过在从源电极和漏电极露出的区域中改变保护层的表面层而产生的。 在Nt（cm-3）表示半导体层的缺陷密度和厚度的情况下，满足Log10 Nt＆nlE; 0.0556＆het; +16.86的关系式; （°）表示保护层的边缘部的锥角。

公开(公告)号：US08377723B2

公开(公告)日：2013-02-19

申请号：US13337601

申请日：2011-12-27

申请人： Hisao Nagai ,  Eiichi Satoh ,  Toshiyuki Aoyama

发明人： Hisao Nagai ,  Eiichi Satoh ,  Toshiyuki Aoyama

IPC分类号： H01L33/16

CPC分类号： H01L29/78696 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678

摘要： Provided is a method of manufacturing a TFT substrate for preventing characteristics of a native oxide layer in a boundary between a microcrystal semiconductor layer and an amorphous semiconductor layer from being degraded. The method includes forming a gate electrode, forming a gate insulating film, modifying the formed first amorphous silicon thin film into a first crystalline silicon thin film, removing a silicon oxide layer on the surface of the first crystalline silicon thin film, forming the second amorphous silicon thin film, and dry etching the first crystalline silicon thin film and the second amorphous silicon thin film, and it is determined whether or not the in-process TFT substrate after the dry etching is returned to the processes after the dry etching by measuring the emission intensity of radicals in plasma during the dry etching and detecting the presence or absence of the silicon oxide layer in the boundary.

摘要翻译： 提供一种制造用于防止微晶半导体层和非晶半导体层之间的边界中的自然氧化物层的特性降低的TFT基板的方法。 该方法包括形成栅电极，形成栅极绝缘膜，将形成的第一非晶硅薄膜修饰为第一晶体硅薄膜，去除第一晶体硅薄膜表面上的氧化硅层，形成第二非晶硅 硅薄膜，并且干蚀刻第一晶体硅薄膜和第二非晶硅薄膜，并且确定在干蚀刻之后的工艺中的TFT基板是否在干法蚀刻之后通过测量 干蚀刻期间等离子体中自由基的发射强度，并检测边界中是否存在氧化硅层。

公开(公告)号：US08970799B2

公开(公告)日：2015-03-03

申请号：US13562042

申请日：2012-07-30

申请人： Eiichi Satoh

发明人： Eiichi Satoh

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1343

CPC分类号： G02F1/136227 ,  G02F1/134363 ,  G02F2001/136218

摘要： A liquid crystal display device includes a pair of transparent substrates facing each other through a liquid crystal layer disposed therebetween; a gate insulating film formed so as to cover a gate electrode formed in the pixel regions, disposed closer to the liquid crystal layer, of one of the transparent substrates; a semiconductor film provided on the gate insulating film, for forming a thin-film transistor; a first electrode provided on the semiconductor film through the first insulating film and the second insulating film; a second electrode provided on the first electrode through a third insulating film; and a contact hole formed collectively in the first insulating film, the second insulating film, and the third insulating film on the first electrode, where a second electrode is formed on the contact hole. A floating electrode is formed in the peripheral region of the contact hole.

摘要翻译： 一种液晶显示装置，包括通过设置在其间的液晶层彼此面对的一对透明基板; 形成为覆盖形成在所述透明基板中的一个的液晶层附近的像素区域中的栅电极的栅极绝缘膜; 设置在所述栅极绝缘膜上的用于形成薄膜晶体管的半导体膜; 通过所述第一绝缘膜和所述第二绝缘膜设置在所述半导体膜上的第一电极; 通过第三绝缘膜设置在第一电极上的第二电极; 以及在第一电极上的第一绝缘膜，第二绝缘膜和第三绝缘膜中共同形成的接触孔，其中第二电极形成在接触孔上。 浮动电极形成在接触孔的周边区域中。

公开(公告)号：US20130016298A1

公开(公告)日：2013-01-17

申请号：US13619822

申请日：2012-09-14

申请人： Yasuharu SHINOKAWA ,  Eiichi Satoh

发明人： Yasuharu SHINOKAWA ,  Eiichi Satoh

IPC分类号： G02F1/1368 ,  H01L33/08

CPC分类号： G02F1/134309 ,  G02F2001/134372

摘要： A liquid crystal display device includes a pair of transparent substrates disposed facing each other through a liquid crystal layer; a gate insulating film formed so as to cover a gate electrode formed in the pixel regions of one of the pair of the transparent substrates closer to the liquid crystal layer; a switching element made of a thin-film transistor placed on the gate insulating film; a first electrode placed on the switching element through first and second insulating films; and a second electrode placed on the first electrode through a third insulating film. The liquid crystal display device generates an electric field in parallel with the pair of the transparent substrates and between the first and second electrodes. The second insulating film is formed of an SOG material having Si—O bonds.

摘要翻译： 液晶显示装置包括通过液晶层彼此面对布置的一对透明基板; 栅极绝缘膜，形成为覆盖形成在更靠近液晶层的一对透明基板中的一个的像素区域中的栅电极; 由栅极绝缘膜上的薄膜晶体管构成的开关元件; 通过第一和第二绝缘膜放置在开关元件上的第一电极; 以及通过第三绝缘膜放置在第一电极上的第二电极。 液晶显示装置与一对透明基板并且在第一和第二电极之间平行地产生电场。 第二绝缘膜由具有Si-O键的SOG材料形成。

公开(公告)号：US20110175098A1

公开(公告)日：2011-07-21

申请号：US13120820

申请日：2009-04-30

申请人： Masayuki Ono ,  Reiko Taniguchi ,  Eiichi Satoh ,  Takayuki Shimamura ,  Masaru Odagiri

发明人： Masayuki Ono ,  Reiko Taniguchi ,  Eiichi Satoh ,  Takayuki Shimamura ,  Masaru Odagiri

IPC分类号： H01L33/08 ,  H01L33/50 ,  H01L33/16

CPC分类号： H01L33/18 ,  B82Y20/00 ,  H01L27/3244 ,  H01L27/3281 ,  H01L51/502

摘要： A light emitting element includes: a first electrode and a second electrode provided as being opposed each other, at least one of the first electrode and the second electrode being transparent or translucent; and a phosphor layer sandwiched between the first electrode and the second electrode, from a direction that is perpendicular to main surfaces of the first and second electrodes. In this structure, the phosphor layer includes: a plurality of phosphor particles that are disposed within a plane of the phosphor layer; and a first and second insulating guides that sandwich two sides of each of the phosphor particles from a direction that is in parallel with the surface of the phosphor layer.

摘要翻译： 发光元件包括：第一电极和设置为彼此相对的第二电极，第一电极和第二电极中的至少一个是透明或半透明的; 以及从垂直于第一和第二电极的主表面的方向夹在第一电极和第二电极之间的磷光体层。 在该结构中，荧光体层包括：配置在荧光体层的平面内的多个荧光体粒子; 以及从与荧光体层的表面平行的方向夹着每个荧光体粒子的两侧的第一和第二绝缘引导件。

公开(公告)号：US07982388B2

公开(公告)日：2011-07-19

申请号：US12374976

申请日：2007-07-24

申请人： Masayuki Ono ,  Reiko Taniguchi ,  Shogo Nasu ,  Eiichi Satoh ,  Kenji Hasegawa ,  Toshiyuki Aoyama ,  Masaru Odagiri

发明人： Masayuki Ono ,  Reiko Taniguchi ,  Shogo Nasu ,  Eiichi Satoh ,  Kenji Hasegawa ,  Toshiyuki Aoyama ,  Masaru Odagiri

IPC分类号： H01J1/62

CPC分类号： C09K11/883 ,  C09K11/565 ,  C09K11/584 ,  H01L33/18 ,  H05B33/14

摘要： This light emitting device includes a pair of electrodes at least one of which is transparent or translucent, and a phosphor layer that is sandwiched between the electrodes and has a polycrystalline structure made of a first semiconductor material, and in this structure, a second semiconductor material different from the first semiconductor material is segregated on a grain boundary of the polycrystalline structure. The first semiconductor material and the second semiconductor material preferably have semiconductor structures of conduction types that are different from each other. Moreover, the first semiconductor material preferably has an n-type semiconductor structure, and the second semiconductor material preferably has a p-type semiconductor structure. Furthermore, in the case where the first semiconductor material is a zinc-based material containing zinc, at least one of the paired electrodes is preferably made of a material containing zinc.

摘要翻译： 该发光器件包括至少一个透明或半透明的一对电极和夹在电极之间并具有由第一半导体材料制成的多晶结构的荧光体层，在该结构中，第二半导体材料 不同于第一半导体材料的多晶结构的晶界分离。 第一半导体材料和第二半导体材料优选具有彼此不同的导电类型的半导体结构。 此外，第一半导体材料优选具有n型半导体结构，并且第二半导体材料优选具有p型半导体结构。 此外，在第一半导体材料是含锌的锌基材料的情况下，成对电极中的至少一个优选由含锌的材料制成。

公开(公告)号：US20100283066A1

公开(公告)日：2010-11-11

申请号：US12746446

申请日：2008-12-04

申请人： Masayuki Ono ,  Shogo Nasu ,  Eiichi Satoh ,  Reiko Taniguchi ,  Takayuki Shimamura ,  Masaru Odagiri

发明人： Masayuki Ono ,  Shogo Nasu ,  Eiichi Satoh ,  Reiko Taniguchi ,  Takayuki Shimamura ,  Masaru Odagiri

IPC分类号： H01L33/44 ,  H01L33/08

CPC分类号： H05B33/145 ,  H05B33/20

摘要： A light emitting device (10) of the present invention includes luminescent particles (14) and a pair of electrodes (12, 16) for injecting an electric current into the luminescent particles (14). An inorganic hole transport material (15) is disposed between the electrodes (12, 16). The luminescent particles (14) are dispersed in the inorganic hole transport material (15). Conductive fine particles may be adhered to at least a part of the surfaces of the luminescent particles (14) for the purpose of achieving further high brightness and high efficiency.

摘要翻译： 本发明的发光器件（10）包括用于将电流注入发光粒子（14）的发光粒子（14）和一对电极（12,16）。 无机空穴传输材料（15）设置在电极（12,16）之间。 发光粒子（14）分散在无机空穴传输材料（15）中。 为了实现更高的亮度和高效率的目的，导电性微粒可附着于发光粒子（14）的至少一部分表面。

公开(公告)号：US20100182800A1

公开(公告)日：2010-07-22

申请号：US12519303

申请日：2007-12-05

申请人： Reiko Taniguchi ,  Masayuki Ono ,  Shogo Nasu ,  Eiichi Satoh ,  Toshiyuki Aoyama ,  Kenji Hasegawa ,  Masaru Odagiri

发明人： Reiko Taniguchi ,  Masayuki Ono ,  Shogo Nasu ,  Eiichi Satoh ,  Toshiyuki Aoyama ,  Kenji Hasegawa ,  Masaru Odagiri

IPC分类号： H05B33/02 ,  F21V7/00

CPC分类号： G02B6/0066 ,  G02F1/133615 ,  H01L33/18 ,  H01L2924/0002 ,  H01L2924/00

摘要： A linear light-emitting device is provided with a pair of first and second linear electrodes opposing each other, and a linear phosphor layer is sandwiched between the paired electrodes, with at least one of the paired first and second electrodes being a transparent electrode, and the phosphor layer has a polycrystalline structure made from a first semiconductor substance, with a second semiconductor substance different from the first semiconductor substance being segregated on a grain boundary of the polycrystalline structure.

摘要翻译： 线性发光装置设置有彼此相对的一对第一和第二线性电极，并且线性荧光体层夹在一对电极之间，成对的第一和第二电极中的至少一个是透明电极，以及 荧光体层具有由第一半导体物质制成的多晶结构，其中与第一半导体物质不同的第二半导体物质分离在多晶结构的晶界上。