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10 条记录 (耗时 0.026 秒)

    Formation of pattern using acrylamide-diacetoneacrylamide copolymer
    1.
    发明授权
    Formation of pattern using acrylamide-diacetoneacrylamide copolymer 失效
    使用丙烯酰胺 - 双丙酮丙烯酰胺共聚物形成图案

    公开(公告)号：US4086090A

    公开(公告)日：1978-04-25

    申请号：US615529

    申请日：1975-09-22

    申请人： Takahiro Kohashi ,  Motoo Akagi ,  Yoichi Oba ,  Saburo Nonogaki ,  Makoto Tanaka ,  Tadao Kaneko ,  Yoshifumi Tomita

    发明人： Takahiro Kohashi ,  Motoo Akagi ,  Yoichi Oba ,  Saburo Nonogaki ,  Makoto Tanaka ,  Tadao Kaneko ,  Yoshifumi Tomita

    IPC分类号： G03F7/012 ,  G03F7/085 ,  G03F7/20 ,  H01J9/227 ,  G03C5/00

    CPC分类号： G03F7/2041 ,  G03F7/0125 ,  G03F7/085 ,  H01J9/2271

    摘要： The present invention affords a process for forming a pattern having a surface area substantially equal to or smaller than area of apertures of shadow-mask through which beams pass on a photoresist film, which contains an acrylamidediacetoneacrylamide copolymer and a water-soluble aromatic bisazide compound, by exposing said photoresist film to light through a mask having the pattern and then developing the film.The use of said photoresist film for the preparation of a phosphor screen of a color picture tube of a black matrix or black stripe type does not require a special technique such as post-etching of a shadow mask and makes it possible to form a three primary color phosphor pattern having a surface area substantially equal to or smaller than the area of apertures of the shadow mask through which lightbeams pass, without mutual "bridging" between phosphor dots. Thus, an excellent phosphor screen of a color picture tube of a black matrix or black stripe type can be prepared.

    摘要翻译： 本发明提供了一种形成图案的方法，该图案的表面积基本上等于或小于荫罩的孔径的面积，光束通过光致抗蚀剂膜，该光致抗蚀剂膜含有丙烯酰胺丙酮丙烯酰胺共聚物和水溶性芳族双叠氮化合物， 通过使具有该图案的掩模将所述光致抗蚀剂膜曝光，然后显影该膜。

    Pattern formation method utilizing deep UV radiation and bisazide composition
    7.
    发明授权
    Pattern formation method utilizing deep UV radiation and bisazide composition 失效
    利用深紫外线辐射和双叠氮化合物组成的图案形成方法

    公开(公告)号：US4469778A

    公开(公告)日：1984-09-04

    申请号：US484847

    申请日：1983-04-14

    申请人： Takao Iwayanagi ,  Takahiro Kohashi ,  Saburo Nonogaki ,  Yoshio Hatano

    发明人： Takao Iwayanagi ,  Takahiro Kohashi ,  Saburo Nonogaki ,  Yoshio Hatano

    IPC分类号： C08F2/50 ,  G03F7/008 ,  G03C5/16 ,  G03F7/26

    CPC分类号： G03F7/008 ,  Y10S430/128

    摘要： Disclosed is a pattern formation method comprising exposing a photosensitive composition comprising a bisazide compound represented by the following general formula: ##STR1## wherein A stands for an atom or atomic group selected from O, S, CH.sub.2, CH.sub.2 CH.sub.2, SO.sub.2 and S.sub.2, X stands for an atom or atomic group selected from H and N.sub.3, and when X is H, Z is a group of N.sub.3 and when X is N.sub.3, Z is an atom of H or Cl, and a polymeric compound to deep UV rays, to form fine patterns.

    摘要翻译： 公开了一种图案形成方法，其包括曝光包含由以下通式表示的双叠氮化合物的光敏组合物：其中A表示选自O，S，CH 2，CH 2 CH 2，SO 2和S 2的原子或原子团，X表示 对于选自H和N 3的原子或原子团，当X是H时，Z是N 3的基团，当X是N 3时，Z是H或Cl的原子，并且聚合物与深紫外线形成 精细图案

    Method of manufacturing semiconductor device utilizing multilayer mask
    10.
    发明授权
    Method of manufacturing semiconductor device utilizing multilayer mask 失效
    利用多层掩模制造半导体器件的方法

    公开(公告)号：US4561169A

    公开(公告)日：1985-12-31

    申请号：US517409

    申请日：1983-07-26

    申请人： Masaru Miyazaki ,  Susumu Takahashi ,  Takahiro Kohashi ,  Kiichi Ueyanagi

    发明人： Masaru Miyazaki ,  Susumu Takahashi ,  Takahiro Kohashi ,  Kiichi Ueyanagi

    IPC分类号： H01L21/027 ,  H01L21/338 ,  H01L21/441

    CPC分类号： H01L29/66871 ,  H01L21/0272

    摘要： In manufacturing a field effect transistor, a pattern which has a wider upper layer and a narrower lower layer is formed at a gate electrode position. Using the pattern as a mask, first and second impurity regions are formed on both the sides of a gate region by ion implantation. Subsequently, at least the lower layer is buried in a material, such as an organic high polymer material, having a selectivity in etching characteristics with respect to the pattern material. After removing the lower layer, an electrode material is embedded in the resulting hole so as to form a gate electrode.

    摘要翻译： 在制造场效应晶体管时，在栅电极位置形成具有更宽的上层和更窄的下层的图案。 使用图案作为掩模，通过离子注入在栅极区域的两侧形成第一和第二杂质区。 随后，至少下层被埋在诸如有机高分子材料的材料中，其具有相对于图案材料的蚀刻特性的选择性。 在去除下层之后，将电极材料嵌入所形成的孔中以形成栅电极。