公开(公告)号：US4614706A

公开(公告)日：1986-09-30

申请号：US606216

申请日：1984-05-02

申请人： Toshiharu Matsuzawa ,  Takao Iwayanagi ,  Kikuo Douta ,  Hiroshi Yanazawa ,  Takahiro Kohashi ,  Saburo Nonogaki

发明人： Toshiharu Matsuzawa ,  Takao Iwayanagi ,  Kikuo Douta ,  Hiroshi Yanazawa ,  Takahiro Kohashi ,  Saburo Nonogaki

IPC分类号： H01L21/30 ,  G03F7/012 ,  H01L21/027 ,  G03F7/26 ,  C23F1/08

CPC分类号： G03F7/0125 ,  Y10S438/948

摘要： A film of a photoresist having phenolic hydroxyl groups is irradiated with far-ultraviolet radiation, and is thereafter developed with an alkaline aqueous solution. Using as a mask a resist pattern thus obtained, dry etching is carried out to form a microscopic pattern. Since the photoresist is highly immune against the dry etching, the microscopic pattern can be formed at a high precision. By adding an azide of a specified structure, the photoresist has its sensitivity to the far-ultraviolet radiation enhanced more.

摘要翻译： 将具有酚羟基的光致抗蚀剂的膜用远紫外线照射，然后用碱性水溶液显影。 使用如此获得的抗蚀剂图案作为掩模，进行干蚀刻以形成微观图案。 由于光致抗蚀剂对干蚀刻具有高度的免疫性，所以可以高精度地形成微观图案。 通过加入特定结构的叠氮化物，光致抗蚀剂对远紫外线辐射的敏感性更强。

公开(公告)号：US4536421A

公开(公告)日：1985-08-20

申请号：US288481

申请日：1981-07-30

申请人： Toshiharu Matsuzawa ,  Kikuo Douta ,  Takao Iwayanagi ,  Hiroshi Yanazawa

发明人： Toshiharu Matsuzawa ,  Kikuo Douta ,  Takao Iwayanagi ,  Hiroshi Yanazawa

IPC分类号： C23F1/00 ,  G03F7/012 ,  G03F7/038 ,  G03F7/26 ,  H01L21/306 ,  B05D1/32 ,  C23F13/00

CPC分类号： G03F7/038 ,  G03F7/0125

摘要： A negative photoresist having benzene rings is irradiated with short-wavelength ultraviolet radiation, and is developed to form a photoresist pattern whose sectional shape is an inverted trapezoid. Using the photoresist pattern, the lift-off process having heretofore required troublesome steps can be performed very easily.

摘要翻译： 用短波紫外线照射具有苯环的负性光致抗蚀剂，并显影以形成截面形状为倒梯形的光刻胶图案。 使用光致抗蚀剂图案，可以非常容易地执行迄今为止需要麻烦的步骤的剥离过程。

公开(公告)号：US3942982A

公开(公告)日：1976-03-09

申请号：US467606

申请日：1974-05-06

申请人： Hiroshi Yanazawa ,  Norikazu Hashimoto ,  Mikio Ashikawa ,  Kikuo Douta

发明人： Hiroshi Yanazawa ,  Norikazu Hashimoto ,  Mikio Ashikawa ,  Kikuo Douta

IPC分类号： H05K3/06 ,  G03F7/085 ,  G03F7/11 ,  H01L21/027 ,  H01L21/30 ,  H01L21/306 ,  H01L21/311 ,  G03C5/00 ,  B60B9/00

CPC分类号： G03F7/11 ,  G03F7/085 ,  H01L21/31111

摘要： In selectively etching a solid oxide thin film which has chemisorbed water (surface hydroxyl groups) in its surface, the thin film is surface-treated with an organic compound which has within its molecule a functional group to react with the surface hydroxyl groups. Thereafter, photo-etching is performed by the conventional method by applying a thin film of a photosensitive organic polymer onto the treated thin film. Through selection of the sort of the organic compound, the degree of side-etch arising in the process of the selective etch can be controlled.

摘要翻译： 在选择性蚀刻其表面具有化学吸附水（表面羟基）的固体氧化物薄膜时，薄膜用分子内具有与表面羟基反应的官能团的有机化合物进行表面处理。 此后，通过将常规方法通过将光敏有机聚合物的薄膜施加到经处理的薄膜上进行光蚀刻。 通过选择这种有机化合物，可以控制在选择性蚀刻过程中产生的侧蚀刻程度。

公开(公告)号：US4902635A

公开(公告)日：1990-02-20

申请号：US175704

申请日：1988-03-31

申请人： Yoshinori Imamura ,  Masaru Miyazaki ,  Akihisa Terano ,  Nobutoshi Matsunaga ,  Hiroshi Yanazawa

发明人： Yoshinori Imamura ,  Masaru Miyazaki ,  Akihisa Terano ,  Nobutoshi Matsunaga ,  Hiroshi Yanazawa

IPC分类号： H01L21/338 ,  H01L21/768 ,  H01L21/8252 ,  H01L23/532 ,  H01L29/417 ,  H01L29/423 ,  H01L29/812

CPC分类号： H01L23/5329 ,  H01L21/7688 ,  H01L21/8252 ,  H01L29/41775 ,  H01L29/42316 ,  H01L2924/0002

摘要： This invention is related to the method for production of semiconductor devices suitable for increasing the integration density of semiconductor integrated circuits, especially GaAs semiconductor IC devices.This invention uses no third wiring metal, contact hole or through hole for connection between the Schottky junction and ohmic electrodes formed on the GaAs semiconductor substrate required in the conventional technology, but provides the method for direct connection between the two electrodes stated above by means of vapor deposition, ion implantation, sputtering, CVD, plasma CVD, dry etching and wet etching.Since the application of this invention enables the two electrodes stated above to be directly connected with high yield, the element area at the connecting portion can be reduced to less than half as compared with the same required in the conventional method, the total element area can be reduced greatly.

摘要翻译： 本发明涉及适用于提高半导体集成电路，尤其是GaAs半导体IC器件的集成密度的半导体器件的制造方法。 本发明不使用在传统技术中所需的GaAs半导体衬底上形成的肖特基结和欧姆电极之间的第三布线金属，接触孔或通孔，而是提供了通过以下方式直接连接在上述两个电极之间的方法： 气相沉积，离子注入，溅射，CVD，等离子体CVD，干蚀刻和湿蚀刻。 由于本发明的应用使得上述两个电极能够以高产率直接连接，所以连接部分的元件面积可以比常规方法所需的量减少到小于一半，总元件面积可以 大大减少

公开(公告)号：US20100063372A1

公开(公告)日：2010-03-11

申请号：US12555718

申请日：2009-09-08

申请人： Russell O. POTTS ,  James W. Moyer ,  Hiroshi Yanazawa ,  Irina Finkelshtein ,  Shuying Ye

发明人： Russell O. POTTS ,  James W. Moyer ,  Hiroshi Yanazawa ,  Irina Finkelshtein ,  Shuying Ye

IPC分类号： A61B5/1468

CPC分类号： A61B5/6833 ,  A61B5/14521 ,  A61B5/14532 ,  A61B5/14865

摘要： Devices, methods, and kits for collecting sweat that has come to the surface of the skin are provided. The sweat may be collected for measuring sweat glucose levels. Because sweat glucose levels correlate to blood glucose levels, the provided devices, methods, and kits may be used by diabetic patients to non-invasively monitor blood glucose levels. Sweat collection devices may be attachable to the surface of the skin and may collect about one microliter or less of sweat. Because only a small, fixed volume of sweat may be collected, the sweat glucose level may be measured in a matter of minutes. Further, as a fixed volume of sweat is tested, inaccuracies due to estimates of the sweat volume being tested are less likely to cause an inaccurate glucose measurement.

摘要翻译： 提供了收集到皮肤表面的汗液的装置，方法和试剂盒。 可以收集汗液来测量汗水葡萄糖水平。 由于汗葡萄糖水平与血糖水平相关，糖尿病患者可使用所提供的装置，方法和试剂盒非侵入性地监测血糖水平。 汗液收集装置可以附着到皮肤表面，并且可以收集大约一微升或更少的汗液。 因为只能收集少量固定量的汗液，所以可以在几分钟内测量出汗糖水平。 此外，当测试固定体积的汗液时，由于测试的汗液体积的估计导致的不准确度不太可能导致不准确的葡萄糖测量。

公开(公告)号：US4321104A

公开(公告)日：1982-03-23

申请号：US157852

申请日：1980-06-09

申请人： Norio Hasegawa ,  Naoki Yamamoto ,  Hiroshi Yanazawa

发明人： Norio Hasegawa ,  Naoki Yamamoto ,  Hiroshi Yanazawa

IPC分类号： G03F7/26 ,  G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/306 ,  C23F1/02

CPC分类号： H01L21/32134 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/32136 ,  Y10S148/018 ,  Y10S148/02 ,  Y10S148/106 ,  Y10S438/952

摘要： In forming an interconnection pattern on a silicon substrate, an Al-Si alloy is used as an interconnection material, a silicon film is deposited on the Al-Si alloy film, and a photoresist layer is applied and thereafter exposed to light to provide a photoresist pattern to serve as a mask for subsequent etching of the Al-Si alloy film.Thus, the generation of standing waves due to reflection at the exposure is prevented, a microscopic interconnection pattern is precisely formed, and neither the junction-through due to a heat treatment nor a degradation in the bonding characteristics occurs.

摘要翻译： 在硅衬底上形成互连图案时，使用Al-Si合金作为互连材料，在Al-Si合金膜上沉积硅膜，并施加光致抗蚀剂层，然后曝光以提供光致抗蚀剂 作为用于随后蚀刻Al-Si合金膜的掩模。 因此，防止由于曝光引起的反射而产生驻波，精确地形成微细互连图案，并且不会发生由于热处理引起的接合，也不会发生接合特性的劣化。