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    Method for preparing partially tert-butoxylated poly(p-hydroxystyrene)
    5.
    发明授权
    Method for preparing partially tert-butoxylated poly(p-hydroxystyrene) 失效
    部分叔丁氧基化聚（对羟基苯乙烯）

    公开(公告)号：US5580936A

    公开(公告)日：1996-12-03

    申请号：US536119

    申请日：1995-09-29

    申请人： Junji Tsuchiya ,  Katsuya Takemura ,  Osamu Watanabe ,  Yoshihumi Takeda ,  Toshinobu Ishihara

    发明人： Junji Tsuchiya ,  Katsuya Takemura ,  Osamu Watanabe ,  Yoshihumi Takeda ,  Toshinobu Ishihara

    IPC分类号： C08F8/00 ,  C08F8/14 ,  C08F12/00 ,  C08F212/14 ,  G03F7/027

    CPC分类号： C08F8/12 ,  C08F2800/20

    摘要： A partially tert-butoxylated poly(p-hydroxystyrene) is prepared by subjecting poly(p-tert-butoxystyrene) to reaction of eliminating some of the tert-butoxy groups in an organic solvent at a temperature of 30.degree.-100.degree. C. in the presence of an acid catalyst at a molar ratio of acid catalyst/t-BuO group of from 0.050 to 2.0. During the elimination reaction, a change of solubility of the resulting partially tert-butoxylated poly(p-hydroxystyrene) is determined to calculate a degree of elimination of tert-butoxy groups. The reaction is terminated when a desired degree of elimination is reached. Through a simple process, partially tert-butoxylated poly(p-hydroxystyrene) having a well controlled t-BuO content is produced in high yields.

    摘要翻译： 通过使聚（对叔丁氧基苯乙烯）在有机溶剂中在30℃-100℃的温度下除去一些叔丁氧基进行反应来制备部分叔丁氧基化的聚（对羟基苯乙烯） 酸催化剂/ t-BuO基团的摩尔比为0.050至2.0的酸催化剂的存在。 在消除反应期间，测定所得部分叔丁氧基化聚（对羟基苯乙烯）的溶解度的变化，以计算叔丁氧基的消除程度。 当达到所需的消除程度时，终止反应。 通过简单的方法，产生具有良好控制的t-BuO含量的部分叔丁氧基化聚（对羟基苯乙烯），产率高。

    RESIST COMPOSITION AND PATTERNING PROCESS
    8.
    发明申请
    RESIST COMPOSITION AND PATTERNING PROCESS 有权
    耐腐蚀组合物和方法

    公开(公告)号：US20070148584A1

    公开(公告)日：2007-06-28

    申请号：US10852157

    申请日：2004-05-25

    申请人： Takanobu Takeda ,  Osamu Watanabe ,  Daisuke Manba

    发明人： Takanobu Takeda ,  Osamu Watanabe ,  Daisuke Manba

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0392 ,  G03F7/0397

    摘要： Resist compositions comprising as the base resin a polymer having alkoxyisobutoxy as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution in fine feature size regions. The compositions are best suited as a chemically amplified resist material for micropatterning in the manufacture of VLSI.

    摘要翻译： 包含作为基础树脂的具有烷氧基异丁氧基作为反应性基团的聚合物的抗蚀剂组合物，其在酸的作用下可分解以增加在碱中的溶解度，其优点包括显着提高曝光前后碱溶解速率的对比度，高灵敏度和 高分辨率的精细特征尺寸区域。 组合物最适合用作VLSI制造中的微图案化学放大抗蚀剂材料。

    Resist composition and patterning process
    9.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号：US07232638B2

    公开(公告)日：2007-06-19

    申请号：US10427939

    申请日：2003-05-02

    申请人： Jun Hatakeyama ,  Hideshi Kurihara ,  Takanobu Takeda ,  Osamu Watanabe

    发明人： Jun Hatakeyama ,  Hideshi Kurihara ,  Takanobu Takeda ,  Osamu Watanabe

    IPC分类号： G03F7/004

    CPC分类号： G03F7/0758 ,  G03F7/0397

    摘要： Chemically amplified positive resist compositions comprising a polymer obtained by copolymerizing a silicon-containing monomer with a polar monomer having a value of LogP or cLogP of up to 0.6 and optionally hydroxystyrene, a photoacid generator and an organic solvent are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching.

    摘要翻译： 包含通过使含硅单体与LogP或cLogP值高达0.6的极性单体和任选的羟基苯乙烯，光酸产生剂和有机溶剂共聚获得的聚合物的化学扩增的正性抗蚀剂组合物对高能辐射敏感， 在小于300nm的波长下具有高灵敏度和分辨率，并且改善了耐氧等离子体蚀刻的耐受性。

    Polymer, resist composition and patterning process
    10.
    发明授权
    Polymer, resist composition and patterning process 有权
    聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US07135269B2

    公开(公告)日：2006-11-14

    申请号：US10765919

    申请日：2004-01-29

    申请人： Jun Hatakeyama ,  Takanobu Takeda ,  Osamu Watanabe

    发明人： Jun Hatakeyama ,  Takanobu Takeda ,  Osamu Watanabe

    IPC分类号： G03C1/73 ,  G03F7/039 ,  G03F7/30 ,  G03F7/36 ,  C08F30/08 ,  C08F24/00

    CPC分类号： G03F7/0395 ,  C08F220/28 ,  C08F222/20 ,  C08F230/08 ,  C08F232/08 ,  G03F7/0397 ,  G03F7/0758

    摘要： A polymer comprising recurring units containing silicon and recurring units having a substituent group of formula (1) is novel wherein A1 is a divalent group selected from furandiyl, tetrahydrofurandiyl and oxanorbornanediyl, R1 and R2 are selected from monovalent C1–C10 hydrocarbon groups, or R1 and R2 taken together may form an aliphatic hydrocarbon ring with the carbon atom, and R3 is hydrogen or a monovalent C1–C10 hydrocarbon group which may contain a hetero atom. The polymer is useful as a base resin to formulate a resist composition which is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength of less than 300 nm as well as satisfactory oxygen plasma etching resistance.

    摘要翻译： 含有硅的重复单元和具有式（1）的取代基的重复单元的聚合物是新颖的，其中A 1是选自呋喃二基，四氢呋喃基和氧杂甘露二烷基的二价基团，R 1， SUP>和R 2选自单价C 1 -C 10烃基或R 1和R 2 一起可以与碳原子一起形成脂族烃环，R 3是氢或一价C 1 -C 1 - 10个可以含有杂原子的烃基。 聚合物可用作基础树脂以配制对高能辐射敏感的抗蚀剂组合物，并且在小于300nm的波长下具有优异的灵敏度和分辨率以及满意的氧等离子体耐蚀刻性。