公开(公告)号：US07315034B2

公开(公告)日：2008-01-01

申请号：US11202101

申请日：2005-08-12

申请人： Takanori Yagita ,  Takashi Nishi ,  Michiro Sugitani ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Masaki Ishikawa ,  Tetsuya Kudo

发明人： Takanori Yagita ,  Takashi Nishi ,  Michiro Sugitani ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Masaki Ishikawa ,  Tetsuya Kudo

IPC分类号： H01J37/147

CPC分类号： H01J37/05 ,  H01J37/317 ,  H01J49/26

摘要： In an irradiation system with an ion beam/charged particle beam having an energy filter, the energy filter is formed by deflection electrodes and a deflection magnet which can be switchingly used. The deflection magnet has a general window-frame shape and is formed with a hollow portion at its center. The deflection electrodes are installed, along with suppression electrodes, in a vacuum chamber arranged in the hollow portion of the deflection magnet. The deflection electrodes are installed with respect to the deflection magnet such that a deflection trajectory of a beam caused by a magnetic field and a deflection trajectory of a beam caused by an electric field overlap each other. Since the deflection electrodes and the deflection magnet can be switchingly used, the system can deal with a wider range of beam conditions and thus is widely usable.

摘要翻译： 在具有能量过滤器的离子束/带电粒子束的照射系统中，能量过滤器由可以切换使用的偏转电极和偏转磁体形成。 偏转磁体具有通常的窗框形状，并且在其中心形成有中空部分。 偏转电极与抑制电极一起安装在布置在偏转磁体的中空部分中的真空室中。 偏转电极相对于偏转磁体安装，使得由电场引起的光束引起的光束的偏转轨迹和由电场引起的偏转轨迹彼此重叠。 由于可以切换使用偏转电极和偏转磁体，所以系统可以处理更宽范围的光束条件，因此可广泛使用。

公开(公告)号：US20060113467A1

公开(公告)日：2006-06-01

申请号：US11202101

申请日：2005-08-12

申请人： Takanori Yagita ,  Takashi Nishi ,  Michiro Sugitani ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Masaki Ishikawa ,  Tetsuya Kudo

发明人： Takanori Yagita ,  Takashi Nishi ,  Michiro Sugitani ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Masaki Ishikawa ,  Tetsuya Kudo

IPC分类号： B01D59/44

CPC分类号： H01J37/05 ,  H01J37/317 ,  H01J49/26

摘要： In an irradiation system with an ion beam/charged particle beam having an energy filter, the energy filter is formed by deflection electrodes and a deflection magnet which can be switchingly used. The deflection magnet has a general window-frame shape and is formed with a hollow portion at its center. The deflection electrodes are installed, along with suppression electrodes, in a vacuum chamber arranged in the hollow portion of the deflection magnet. The deflection electrodes are installed with respect to the deflection magnet such that a deflection trajectory of a beam caused by a magnetic field and a deflection trajectory of a beam caused by an electric field overlap each other. Since the deflection electrodes and the deflection magnet can be switchingly used, the system can deal with a wider range of beam conditions and thus is widely usable.

摘要翻译： 在具有能量过滤器的离子束/带电粒子束的照射系统中，能量过滤器由可以切换使用的偏转电极和偏转磁体形成。 偏转磁体具有通常的窗框形状，并且在其中心形成有中空部分。 偏转电极与抑制电极一起安装在布置在偏转磁体的中空部分中的真空室中。 偏转电极相对于偏转磁体安装，使得由电场引起的光束引起的光束的偏转轨迹和由电场引起的偏转轨迹彼此重叠。 由于可以切换使用偏转电极和偏转磁体，所以系统可以处理更宽范围的光束条件，因此可广泛使用。

公开(公告)号：US07276711B2

公开(公告)日：2007-10-02

申请号：US11150273

申请日：2005-06-13

申请人： Hiroshi Kawaguchi ,  Takanori Yagita ,  Takashi Nishi ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa

发明人： Hiroshi Kawaguchi ,  Takanori Yagita ,  Takashi Nishi ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa

IPC分类号： H01J37/317

CPC分类号： H01J37/026 ,  H01J37/3171

摘要： A beam space-charge compensation device is applied to an angular energy filter provided in an ion beam processing system that performs processing by irradiating onto a wafer with an ion beam. The beam space-charge compensation device comprises a plasma shower provided in a beam-guiding chamber of the angular energy filter. The plasma shower comprises an arc chamber having a filament for generating thermo-electrons for plasma. The arc chamber comprises an extraction hole for extracting the thermo-electrons. The plasma shower is arranged such that the extraction hole is located on lines of magnetic force, perpendicular to an ion beam advancing direction, of the magnetic field and that a center axis of the filament and a center axis of said extraction hole coincide with the lines of magnetic force, perpendicular to the ion beam advancing direction, of the magnetic field.

摘要翻译： 光束空间电荷补偿装置被应用于通过用离子束照射到晶片上进行处理的离子束处理系统中提供的角能量滤波器。 光束空间电荷补偿装置包括设置在角能量滤波器的光束引导室中的等离子体淋浴。 等离子体喷淋器包括具有用于产生等离子体的热电子的灯丝的电弧室。 电弧室包括用于提取热电子的提取孔。 等离子体淋浴器被布置成使得提取孔位于垂直于离子束行进方向的磁力线上，并且该细丝的中心轴线和所述提取孔的中心轴线与线条重合 的磁力，垂直于离子束前进方向的磁场。

公开(公告)号：US20060113491A1

公开(公告)日：2006-06-01

申请号：US11150273

申请日：2005-06-13

申请人： Hiroshi Kawaguchi ,  Takanori Yagita ,  Takashi Nishi ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa

发明人： Hiroshi Kawaguchi ,  Takanori Yagita ,  Takashi Nishi ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa

IPC分类号： H01J37/08

CPC分类号： H01J37/026 ,  H01J37/3171

摘要： A beam space-charge compensation device is applied to an angular energy filter provided in an ion beam processing system that performs processing by irradiating onto a wafer with an ion beam. The beam space-charge compensation device comprises a plasma shower provided in a beam-guiding chamber of the angular energy filter. The plasma shower comprises an arc chamber having a filament for generating thermo-electrons for plasma. The arc chamber comprises an extraction hole for extracting the thermo-electrons. The plasma shower is arranged such that the extraction hole is located on lines of magnetic force, perpendicular to an ion beam advancing direction, of the magnetic field and that a center axis of the filament and a center axis of said extraction hole coincide with the lines of magnetic force, perpendicular to the ion beam advancing direction, of the magnetic field.

摘要翻译： 光束空间电荷补偿装置被应用于通过用离子束照射到晶片上进行处理的离子束处理系统中提供的角能量滤波器。 光束空间电荷补偿装置包括设置在角能量滤波器的光束引导室中的等离子体淋浴。 等离子体喷淋器包括具有用于产生等离子体的热电子的灯丝的电弧室。 电弧室包括用于提取热电子的提取孔。 等离子体淋浴器被布置成使得提取孔位于垂直于离子束行进方向的磁力线上，并且该细丝的中心轴线和所述提取孔的中心轴线与线条重合 的磁力，垂直于离子束前进方向的磁场。

公开(公告)号：US07982192B2

公开(公告)日：2011-07-19

申请号：US12106735

申请日：2008-04-21

申请人： Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Hiroshi Matsushita ,  Takanori Yagita ,  Yoshitaka Amano ,  Yoshito Fujii

发明人： Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Hiroshi Matsushita ,  Takanori Yagita ,  Yoshitaka Amano ,  Yoshito Fujii

IPC分类号： H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/1477 ,  H01J2237/0042 ,  H01J2237/028

摘要： In a beam processing apparatus including a beam scanner having a two electrodes type deflection scanning electrode, the beam scanner further includes shielding suppression electrode assemblies respectively at vicinities of upstream side and downstream side of the two electrodes type deflection scanning electrode and having openings in a rectangular shape for passing a charged particle beam. Each of the shielding suppression electrode assemblies is an assembly electrode comprising one sheet of a suppression electrode and two sheets of shielding ground electrodes interposing the suppression electrode. A total of front side portions and rear side portions of the two electrodes type deflection scanning electrode is shielded by the two sheets of shielding ground electrodes.

摘要翻译： 在包括具有两电极型偏转扫描电极的光束扫描器的光束处理装置中，光束扫描器还包括分别在两电极型偏转扫描电极的上游侧和下游侧的附近的屏蔽抑制电极组件，并具有矩形的开口 用于通过带电粒子束的形状。 每个屏蔽抑制电极组件是包括一片抑制电极和插入抑制电极的两片屏蔽接地电极的组装电极。 两电极型偏转扫描电极的前侧部分和后侧部分被两片屏蔽接地电极屏蔽。

公开(公告)号：US20080251734A1

公开(公告)日：2008-10-16

申请号：US12100861

申请日：2008-04-10

申请人： Mitsukuni Tsukihara ,  Takanori Yagita ,  Yoshitaka Amano ,  Mitsuaki Kabasawa

发明人： Mitsukuni Tsukihara ,  Takanori Yagita ,  Yoshitaka Amano ,  Mitsuaki Kabasawa

IPC分类号： G21K1/08

CPC分类号： H01J37/3171 ,  H01J37/05 ,  H01J37/304 ,  H01J2237/30477

摘要： An ion implantation apparatus reciprocally scans an ion beam extracted from an ion source and passed through a mass analysis magnet apparatus and a mass analysis slit and irradiates to a wafer. The ion beam is converged and shaped by providing a first quadrupole vertical focusing electromagnet at a section of a beam line from an outlet of the mass analysis magnet apparatus before incidence of the mass analysis slit and providing a second quadrupole vertical focusing electromagnet having an effective magnetic field effect larger than that of the first quadrupole focusing electromagnet at a section of the beam line from an outlet of the mass analysis slit before incidence on the beam scanner.

摘要翻译： 离子注入装置相互扫描从离子源提取的离子束并通过质量分析磁体装置和质量分析狭缝并照射到晶片。 通过在质量分析用狭缝入射之前从质量分析磁体装置的出口在梁线的一部分处设置第一四极杆垂直聚焦电磁体并提供具有有效磁性的第二四极杆垂直聚焦电磁体，离子束会聚并成形 在光束扫描器上入射之前，在质量分析狭缝的出口处的光束线的一部分处的第一四极聚焦电磁体的场效应大于第一四极聚焦电磁体。

公开(公告)号：US07755067B2

公开(公告)日：2010-07-13

申请号：US12100861

申请日：2008-04-10

申请人： Mitsukuni Tsukihara ,  Takanori Yagita ,  Yoshitaka Amano ,  Mitsuaki Kabasawa

发明人： Mitsukuni Tsukihara ,  Takanori Yagita ,  Yoshitaka Amano ,  Mitsuaki Kabasawa

IPC分类号： H01J37/317 ,  H01J37/256 ,  H01L21/265 ,  G21K1/08

CPC分类号： H01J37/3171 ,  H01J37/05 ,  H01J37/304 ,  H01J2237/30477

摘要： An ion implantation apparatus reciprocally scans an ion beam extracted from an ion source and passed through a mass analysis magnet apparatus and a mass analysis slit and irradiates to a wafer. The ion beam is converged and shaped by providing a first quadrupole vertical focusing electromagnet at a section of a beam line from an outlet of the mass analysis magnet apparatus before incidence of the mass analysis slit and providing a second quadrupole vertical focusing electromagnet having an effective magnetic field effect larger than that of the first quadrupole focusing electromagnet at a section of the beam line from an outlet of the mass analysis slit before incidence on the beam scanner.

摘要翻译： 离子注入装置相互扫描从离子源提取的离子束并通过质量分析磁体装置和质量分析狭缝并照射到晶片。 通过在质量分析用狭缝入射之前从质量分析磁体装置的出口在梁线的一部分处设置第一四极杆垂直聚焦电磁体并提供具有有效磁性的第二四极杆垂直聚焦电磁体，离子束会聚并成形 在光束扫描器上入射之前，在质量分析狭缝的出口处的光束线的一部分处的第一四极聚焦电磁体的场效应大于第一四极聚焦电磁体。

公开(公告)号：US20080251713A1

公开(公告)日：2008-10-16

申请号：US12100666

申请日：2008-04-10

申请人： Mitsukuni Tsukihara ,  Takanori Yagita ,  Hiroshi Sogabe ,  Toshio Yumiyama ,  Mitsuaki Kabasawa

发明人： Mitsukuni Tsukihara ,  Takanori Yagita ,  Hiroshi Sogabe ,  Toshio Yumiyama ,  Mitsuaki Kabasawa

IPC分类号： B01D59/44 ,  G21K5/10

CPC分类号： H01J37/3171 ,  H01J37/045 ,  H01J37/304 ,  H01J2237/0213 ,  H01J2237/151 ,  H01J2237/30455 ,  H01J2237/31703

摘要： An ion implantation apparatus according to the invention includes a park electrode as a deflecting apparatus arranged at a section of a beam line from an outlet of a mass analysis magnet apparatus to a front side of a mass analysis slit for deflecting an ion beam in a predetermined direction of being deviated from a beam trajectory line by an operation of an electric field. When the ion beam does not satisfy a desired condition, a park voltage is applied to the park electrode, thereby, the ion beam is brought into an evacuated state by being deflected from the beam trajectory line. As a result, the ion beam cannot pass through the mass analysis slit, and therefore, the ion beam which does not arrive at a wafer to prevent the ion beam which does not satisfy the condition from being irradiated to the wafer.

摘要翻译： 根据本发明的离子注入装置包括作为偏转装置的驻极电极，其布置在从质量分析磁体装置的出口到质量分析狭缝的前侧的束线的部分处，用于将预定的离子束偏转 通过电场的操作从光束轨迹线偏离的方向。 当离子束不满足期望条件时，停放电压被施加到驻极电极，由此，离子束通过从光束轨迹线偏转而处于抽真空状态。 结果，离子束不能通过质量分析狭缝，因此离子束不会到达晶片以防止不满足条件的离子束照射到晶片。

公开(公告)号：US07851772B2

公开(公告)日：2010-12-14

申请号：US12100666

申请日：2008-04-10

申请人： Mitsukuni Tsukihara ,  Takanori Yagita ,  Hiroshi Sogabe ,  Toshio Yumiyama ,  Mitsuaki Kabasawa

发明人： Mitsukuni Tsukihara ,  Takanori Yagita ,  Hiroshi Sogabe ,  Toshio Yumiyama ,  Mitsuaki Kabasawa

IPC分类号： H01J37/317 ,  H01J37/28 ,  G21K1/08

CPC分类号： H01J37/3171 ,  H01J37/045 ,  H01J37/304 ,  H01J2237/0213 ,  H01J2237/151 ,  H01J2237/30455 ,  H01J2237/31703

摘要： An ion implantation apparatus according to the invention includes a park electrode as a deflecting apparatus arranged at a section of a beam line from an outlet of a mass analysis magnet apparatus to a front side of a mass analysis slit for deflecting an ion beam in a predetermined direction of being deviated from a beam trajectory line by an operation of an electric field. When the ion beam does not satisfy a desired condition, a park voltage is applied to the park electrode, thereby, the ion beam is brought into an evacuated state by being deflected from the beam trajectory line. As a result, the ion beam cannot pass through the mass analysis slit, and therefore, the ion beam which does not arrive at a wafer to prevent the ion beam which does not satisfy the condition from being irradiated to the wafer.

摘要翻译： 根据本发明的离子注入装置包括作为偏转装置的驻极电极，其布置在从质量分析磁体装置的出口到质量分析狭缝的前侧的束线的部分处，用于将预定的离子束偏转 通过电场的操作从光束轨迹线偏离的方向。 当离子束不满足期望条件时，停放电压被施加到驻极电极，由此，离子束通过从光束轨迹线偏转而处于抽真空状态。 结果，离子束不能通过质量分析狭缝，因此离子束不会到达晶片以防止不满足条件的离子束照射到晶片。

公开(公告)号：US20080258074A1

公开(公告)日：2008-10-23

申请号：US12106735

申请日：2008-04-21

申请人： Mitsukuni TSUKIHARA ,  Mitsuaki Kabasawa ,  Hiroshi Matsushita ,  Takanori Yagita ,  Yoshitaka Amano ,  Yoshito Fujii

发明人： Mitsukuni TSUKIHARA ,  Mitsuaki Kabasawa ,  Hiroshi Matsushita ,  Takanori Yagita ,  Yoshitaka Amano ,  Yoshito Fujii

IPC分类号： H01J3/30

CPC分类号： H01J37/3171 ,  H01J37/1477 ,  H01J2237/0042 ,  H01J2237/028

摘要： In a beam processing apparatus including a beam scanner having a two electrodes type deflection scanning electrode, the beam scanner further includes shielding suppression electrode assemblies respectively at vicinities of upstream side and downstream side of the two electrodes type deflection scanning electrode and having openings in a rectangular shape for passing a charged particle beam. Each of the shielding suppression electrode assemblies is an assembly electrode comprising one sheet of a suppression electrode and two sheets of shielding ground electrodes interposing the suppression electrode. A total of front side portions and rear side portions of the two electrodes type deflection scanning electrode is shielded by the two sheets of shielding ground electrodes.

摘要翻译： 在包括具有两电极型偏转扫描电极的光束扫描器的光束处理装置中，光束扫描器还包括分别在两电极型偏转扫描电极的上游侧和下游侧的附近的屏蔽抑制电极组件，并具有矩形的开口 用于通过带电粒子束的形状。 每个屏蔽抑制电极组件是包括一片抑制电极和插入抑制电极的两片屏蔽接地电极的组装电极。 两电极型偏转扫描电极的前侧部分和后侧部分被两片屏蔽接地电极屏蔽。