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    Electron microscope
    1.
    发明授权
    Electron microscope 有权

    公开(公告)号：US09773639B2

    公开(公告)日：2017-09-26

    申请号：US15196149

    申请日：2016-06-29

    Applicant: JEOL Ltd.

    Inventor： Kazuya Yamazaki

    IPC: H01J37/26 ,  H01J37/18 ,  H01J37/244 ,  H01J37/10

    CPC classification number: H01J37/18 ,  H01J37/10 ,  H01J37/16 ,  H01J37/244 ,  H01J37/26 ,  H01J2237/002 ,  H01J2237/022 ,  H01J2237/028 ,  H01J2237/18 ,  H01J2237/186

    Abstract: There is provided an electron microscope capable of easily achieving power saving. The electron microscope (100) includes a controller (60) for switching the mode of operation of the microscope from a first mode where electron lenses (12, 14, 18, 20) are activated to a second mode where the electron lenses (12, 14, 18, 20) are not activated. During this operation for making a switch from the first mode to the second mode, the controller (60) performs the steps of: closing a first vacuum gate valve (50), opening a second vacuum gate valve (52), and vacuum pumping the interior of the electron optical column (2) of the microscope by the second vacuum pumping unit (40); then controlling a heating section (26) to heat an adsorptive member (242); then opening the first vacuum gate valve (50), closing the second vacuum gate valve (52), and vacuum pumping the interior of the electron optical column (2) by the first vacuum pumping unit (30); and turning off the electron lenses (12, 14, 18, 20).

    Method for Removing Foreign Substances in Charged Particle Beam Device, and Charged Particle Beam Device
    2.
    发明申请
    Method for Removing Foreign Substances in Charged Particle Beam Device, and Charged Particle Beam Device 有权
    带电粒子束装置和带电粒子束装置中除去异物的方法

    公开(公告)号：US20150279609A1

    公开(公告)日：2015-10-01

    申请号：US14433886

    申请日：2013-10-17

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Kazuma Tanii ,  Yuji Kasai ,  Masakazu Takahashi ,  Hajime Kawano

    IPC: H01J37/141 ,  H01J37/21

    CPC classification number: H01J37/141 ,  H01J37/21 ,  H01J37/28 ,  H01J2237/022 ,  H01J2237/028 ,  H01J2237/14 ,  H01J2237/2817

    Abstract: Foreign substances present in a sample chamber are attached to or drawn close to an objective lens and an electrode disposed close to the objective lens by applying a higher magnetic field than when normally used to the objective lens and applying a higher electric field than when normally used to the electrode disposed close to the objective lens. A stage is moved such that the center of an optical axis is located directly above a dedicated stand capable of applying voltage, the magnetic field of the objective lens is turned off, and then the potential difference between the electrode disposed close to the objective lens and an electrode disposed close to the sage is periodically maximized and minimized to thereby forcibly drop the foreign substances onto the dedicated stand capable of applying voltage.

    Abstract translation: 存在于样品室中的异物通过施加比通常用于物镜时更高的磁场并且施加比通常使用的电场高的电场而附接到或靠近物镜和靠近物镜设置的电极 到靠近物镜设置的电极。 移动台，使得光轴的中心位于能够施加电压的专用支架的正上方，物镜的磁场被关闭，然后将靠近物镜的电极之间的电位差和 靠近圣人设置的电极被周期性地最大化并最小化，从而强制将异物掉入能够施加电压的专用支架上。

    Particle beam microscope
    4.
    发明授权
    Particle beam microscope 有权
    粒子束显微镜

    公开(公告)号：US08476589B2

    公开(公告)日：2013-07-02

    申请号：US13539291

    申请日：2012-06-29

    Applicant: Gerd Benner ,  Stefan Meyer ,  Steffen Niederberger ,  Dirk Preikszas

    Inventor： Gerd Benner ,  Stefan Meyer ,  Steffen Niederberger ,  Dirk Preikszas

    IPC: H01J37/244

    CPC classification number: H01J37/244 ,  H01J37/28 ,  H01J2237/024 ,  H01J2237/028 ,  H01J2237/2445 ,  H01J2237/24495 ,  H01J2237/2802

    Abstract: A particle beam microscope comprises a magnetic lens 3 having an optical axis 53 and a pole piece 21. An object 5 to be examined is mounted at a point of intersection 51 between an optical axis 53 and the object plane 19. First and second X-ray detectors 33 have first and second radiation-sensitive substrates 35 arranged such that a first elevation angle β1 between a first straight line 551 extending through the point of intersection 51 and a center of the first substrate 351 and the object plane 19 differs from a second elevation angle β2 between a second straight line 552 extending through the point of intersection 51 and a center of the second substrate 352 and the object plane 19 by more than 14°.

    Abstract translation: 粒子束显微镜包括具有光轴53和极片21的磁透镜3.被检查物5安装在光轴53与物面19之间的交点51处。第一和第二X射线 射线检测器33具有第一和第二辐射敏感基板35，其布置成使得延伸穿过交点51的第一直线551与第一基板351的中心与物平面19之间的第一仰角β1与第二 延伸穿过交点51的第二直线552与第二基板352的中心和物平面19之间的仰角β2超过14°。

    Beam processing apparatus
    5.
    发明授权
    Beam processing apparatus 有权
    梁加工设备

    公开(公告)号：US07982192B2

    公开(公告)日：2011-07-19

    申请号：US12106735

    申请日：2008-04-21

    Applicant: Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Hiroshi Matsushita ,  Takanori Yagita ,  Yoshitaka Amano ,  Yoshito Fujii

    Inventor： Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Hiroshi Matsushita ,  Takanori Yagita ,  Yoshitaka Amano ,  Yoshito Fujii

    IPC: H01J37/317

    CPC classification number: H01J37/3171 ,  H01J37/1477 ,  H01J2237/0042 ,  H01J2237/028

    Abstract: In a beam processing apparatus including a beam scanner having a two electrodes type deflection scanning electrode, the beam scanner further includes shielding suppression electrode assemblies respectively at vicinities of upstream side and downstream side of the two electrodes type deflection scanning electrode and having openings in a rectangular shape for passing a charged particle beam. Each of the shielding suppression electrode assemblies is an assembly electrode comprising one sheet of a suppression electrode and two sheets of shielding ground electrodes interposing the suppression electrode. A total of front side portions and rear side portions of the two electrodes type deflection scanning electrode is shielded by the two sheets of shielding ground electrodes.

    Abstract translation: 在包括具有两电极型偏转扫描电极的光束扫描器的光束处理装置中，光束扫描器还包括分别在两电极型偏转扫描电极的上游侧和下游侧的附近的屏蔽抑制电极组件，并具有矩形的开口 用于通过带电粒子束的形状。 每个屏蔽抑制电极组件是包括一片抑制电极和插入抑制电极的两片屏蔽接地电极的组装电极。 两电极型偏转扫描电极的前侧部分和后侧部分被两片屏蔽接地电极屏蔽。

    Charged beam dump and particle attractor
    7.
    发明授权
    Charged beam dump and particle attractor 有权
    充电束流和吸引子

    公开(公告)号：US07547899B2

    公开(公告)日：2009-06-16

    申请号：US11445677

    申请日：2006-06-02

    Applicant: John W. Vanderpot ,  Yongzhang Huang

    Inventor： John W. Vanderpot ,  Yongzhang Huang

    IPC: G21K5/10 ,  H01J37/08

    CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

    Abstract: A system, method, and apparatus for mitigating contamination during ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and travels through the mass analyzer to the end station. An ion beam dump assembly comprising a particle collector, particle attractor, and shield are associated with the mass analyzer, wherein an electrical potential of the particle attractor is operable to attract and constrain contamination particles within the particle collector, and wherein the shield is operable to shield the electrical potential of the particle attractor from an electrical potential of an ion beam within the mass analyzer.

    Abstract translation: 提供了一种用于减少离子注入期间污染的系统，方法和装置。 提供了位于离子源和终端之间的离子源，端站和质量分析器，其中离子束由离子源形成并通过质量分析器传送到终端站。 包括粒子收集器，颗粒吸引子和屏蔽的离子束转储组件与质量分析器相关联，其中，所述粒子吸引子的电位可操作以吸引和约束所述颗粒收集器内的污染颗粒，并且其中所述屏蔽件可操作为 屏蔽质子分析仪内离子束电位的吸引子的电位。

    Particulate prevention in ion implantation
    9.
    发明申请
    Particulate prevention in ion implantation 有权

    公开(公告)号：US20060284116A1

    公开(公告)日：2006-12-21

    申请号：US11445667

    申请日：2006-06-02

    Applicant: Donald Berrian ,  John Vanderpot

    Inventor： Donald Berrian ,  John Vanderpot

    IPC: H01J37/08

    CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

    Abstract: A system and method for mitigating contamination in an ion implantation system is provided. The system comprises an ion source, a power supply operable to supply power to a filament and mirror electrode of the ion source, a workpiece handling system, and a controller, wherein the ion source is selectively tunable via the controller to provide rapid control of a formation of an ion beam. The controller is operable to selectively rapidly control power to the ion source, therein modulating a power of the ion beam between an implantation power and a minimal power in less than approximately 20 microseconds based, at least in part, to a signal associated with a workpiece position. Control of the ion source therefore mitigates particle contamination in the ion implantation system by minimizing an amount of time at which the ion beam is at the implantation current.

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