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公开(公告)号：US08163852B2
公开(公告)日：2012-04-24
申请号：US12319492
申请日：2009-01-08
IPC分类号： C08F2/00
CPC分类号： G03F7/085 , G03F7/0397
摘要： Solving problems in the prior art, provided are a resist polymer which is small in lot-to-lot, reactor-to-reactor and scale-to-scale variations, and contains no high polymer, is excellent in solubility and storage stability, and is suitable for fine pattern formation, and a method for production thereof. The present invention provides the resist polymer at least having a repeating unit having a structure which is decomposed by an acid to become soluble in an alkali developer and a repeating unit having a polar group to enhance adhesion to a substrate, characterized in that a peak area of a high molecular weight component (high polymer) with molecular weight of 100,000 or more is 0.1% or less based on an entire peak area in a molecular weight distribution determined, by gel permeation chromatography (GPC).
摘要翻译： 解决现有技术中的问题，提供了一种抗批聚物，反应堆对反应器和尺度尺度变化小的抗蚀剂聚合物，不含高聚物，溶解性和储存稳定性优异， 适用于精细图案形成及其制造方法。 本发明提供的抗蚀剂聚合物至少具有由酸分解成可溶于碱性显影剂的结构的重复单元和具有极性基团的重复单元以增强与基材的粘附性，其特征在于峰面积 的分子量为100,000以上的高分子量成分（高分子量）为0.1％以下，通过凝胶渗透色谱法（GPC）测定的分子量分布中的全部峰面积。
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公开(公告)号：US20090123868A1
公开(公告)日：2009-05-14
申请号：US12319492
申请日：2009-01-08
IPC分类号： G03C1/492
CPC分类号： G03F7/085 , G03F7/0397
摘要： Solving problems in the prior art, provided are a resist polymer which is small in lot-to-lot, reactor-to-reactor and scale-to-scale variations, and contains no high polymer, is excellent in solubility and storage stability, and is suitable for fine pattern formation, and a method for production thereof. The present invention provides the resist polymer at least having a repeating unit having a structure which is decomposed by an acid to become soluble in an alkali developer and a repeating unit having a polar group to enhance adhesion to a substrate, characterized in that a peak area of a high molecular weight component (high polymer) with molecular weight of 100,000 or more is 0.1% or less based on an entire peak area in a molecular weight distribution determined, by gel permeation chromatography (GPC).
摘要翻译： 解决现有技术中的问题，提供了一种抗批聚物，反应堆对反应器和尺度尺度变化小的抗蚀剂聚合物，不含高聚物，溶解性和储存稳定性优异， 适用于精细图案形成及其制造方法。 本发明提供的抗蚀剂聚合物至少具有由酸分解成可溶于碱性显影剂的结构的重复单元和具有极性基团的重复单元以增强与基材的粘附性，其特征在于峰面积 的分子量为100,000以上的高分子量成分（高分子量）为0.1％以下，通过凝胶渗透色谱法（GPC）测定的分子量分布中的全部峰面积。
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公开(公告)号：US20050287474A1
公开(公告)日：2005-12-29
申请号：US11203256
申请日：2005-08-12
CPC分类号： G03F7/085 , G03F7/0397
摘要： Solving problems in the prior art, provided are a resist polymer which is small in lot-to-lot, reactor-to-reactor and scale-to-scale variations, and contains no high polymer, is excellent in solubility and storage stability, and is suitable for fine pattern formation, and a method for production thereof. The present invention provides the resist polymer at least having a repeating unit having a structure which is decomposed by an acid to become soluble in an alkali developer and a repeating unit having a polar group to enhance adhesion to a substrate, characterized in that a peak area of a high molecular weight component (high polymer) with molecular weight of 100,000 or more is 0.1% or less based on an entire peak area in a molecular weight distribution determined by gel permeation chromatography (GPC).
摘要翻译： 解决现有技术中的问题，提供了一种抗批聚物，反应堆对反应器和尺度尺度变化小的抗蚀剂聚合物，不含高聚物，溶解性和储存稳定性优异， 适用于精细图案形成及其制造方法。 本发明提供的抗蚀剂聚合物至少具有由酸分解成可溶于碱性显影剂的结构的重复单元和具有极性基团的重复单元以增强与基材的粘附性，其特征在于峰面积 的分子量为100,000以上的高分子量成分（高分子量）为0.1％以下，通过凝胶渗透色谱法（GPC）测定的分子量分布中的全部峰面积。
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4.发明授权Preparation process of copolymer for semiconductor lithography and a copolymer for semiconductor lithography available by this process 有权用于半导体光刻的共聚物的制备方法和通过该方法可获得的用于半导体光刻的共聚物公开(公告)号：US07045582B2
公开(公告)日：2006-05-16
申请号：US11005914
申请日：2004-12-06
申请人： Takanori Yamagishi , Kazuhiko Mizuno , Tomo Oikawa , Ichiro Kato
发明人： Takanori Yamagishi , Kazuhiko Mizuno , Tomo Oikawa , Ichiro Kato
IPC分类号： C08F2/38
CPC分类号： G03F7/0397
摘要： Provided are a preparation process of a copolymer for semiconductor lithography, suited for a film forming composition used for the formation of minute patterns necessary for semiconductor fabrication, which comprises carrying out radical polymerization of at least two monomers having an ethylenic double bond in the presence of a polymerization initiator in a polymerization solvent, while causing to exist, in the solution containing the monomers, a polymerization inhibitive component; and a copolymer for semiconductor lithography prepared by the above-described process, and contains no high polymer, has excellent storage stability and generates remarkably less defects in resist pattern when used for semiconductor lithography.
摘要翻译： 提供一种半导体光刻用共聚物的制备方法，适用于形成半导体制造所需的微小图案的成膜组合物，其包括在存在下进行至少两种具有烯键式双键的单体的自由基聚合 聚合引发剂在聚合溶剂中，同时存在于含有单体的溶液中的聚合抑制成分; 和通过上述方法制备的半导体光刻用共聚物，不含高分子聚合物，具有优异的保存稳定性，并且在用于半导体光刻时产生抗蚀剂图案的显着较少的缺陷。
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5.发明申请Preparation process of copolymer for semiconductor lithography and a copolymer for semiconductor lithography available by this process 有权用于半导体光刻的共聚物的制备方法和通过该方法可获得的用于半导体光刻的共聚物公开(公告)号：US20050131184A1
公开(公告)日：2005-06-16
申请号：US11005914
申请日：2004-12-06
申请人： Takanori Yamagishi , Kazuhiko Mizuno , Tomo Oikawa , Ichiro Kato
发明人： Takanori Yamagishi , Kazuhiko Mizuno , Tomo Oikawa , Ichiro Kato
IPC分类号： G03F7/033 , C08F2/06 , C08F2/38 , C08F2/40 , C08F118/02 , C08F220/18 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397
摘要： Provided are a preparation process of a copolymer for semiconductor lithography, suited for a film forming composition used for the formation of minute patterns necessary for semiconductor fabrication, which comprises carrying out radical polymerization of at least two monomers having an ethylenic double bond in the presence of a polymerization initiator in a polymerization solvent, while causing to exist, in the solution containing the monomers, a polymerization inhibitive component; and a copolymer for semiconductor lithography prepared by the above-described process, and contains no high polymer, has excellent storage stability and generates remarkably less defects in resist pattern when used for semiconductor lithography.
摘要翻译： 提供一种半导体光刻用共聚物的制备方法，适用于形成半导体制造所需的微小图案的成膜组合物，其包括在存在下进行至少两种具有烯键式双键的单体的自由基聚合 聚合引发剂在聚合溶剂中，同时存在于含有单体的溶液中的聚合抑制成分; 和通过上述方法制备的半导体光刻用共聚物，不含高分子聚合物，具有优异的保存稳定性，并且在用于半导体光刻时产生抗蚀剂图案的显着较少的缺陷。
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6.发明授权Copolymer and composition for semiconductor lithography and process for producing the copolymer 有权用于半导体光刻的共聚物和组合物以及用于制备共聚物的方法公开(公告)号：US08859180B2
公开(公告)日：2014-10-14
申请号：US12311993
申请日：2007-10-19
申请人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
发明人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
IPC分类号： G03F7/039 , C08F2/06 , C08F224/00 , C08F220/18 , C08F216/38
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F2220/283 , G03F7/2041
摘要： [Task to Be Achieved]To provide a chemically amplified type positive copolymer for semiconductor lithography, which has eliminated the problems of prior art, has a high development contrast, and has excellent resolution in fine-pattern formation; a composition for semiconductor lithography which contains the copolymer; and a process for producing the copolymer.[Means for Achievement]The copolymer for semiconductor lithography according to the present invention is a copolymer which has at least (A) a repeating unit having a structure which has an alkali-soluble group protected by an acid-labile, dissolution-suppressing group, (B) a repeating group having a lactone structure and (C) a repeating group having an alcoholic hydroxyl group and which is characterized by having an acid value of 0.01 mmol/g or less as determined by dissolving the copolymer in a solvent and subjecting the solution to neutralization titration with a solution of an alkali metal hydroxide using Bromothymol Blue as an indicator.
摘要翻译： [要实现的任务]为了提供半导体光刻的化学放大型正共聚物，其消除了现有技术的问题，具有高显影对比度，并且在精细图案形成中具有优异的分辨率; 含有共聚物的半导体光刻用组合物; 和共聚物的制造方法。 [实现方法]本发明的半导体光刻用共聚物是至少具有（A）具有由酸不稳定，溶解抑制基团保护的碱溶性基团的结构的重复单元的共聚物， （B）具有内酯结构的重复基团和（C）具有醇羟基的重复基团，其特征在于通过将共聚物溶解在溶剂中而使酸值为0.01mmol / g以下， 使用溴百里酚蓝作为指示剂的碱金属氢氧化物溶液中和滴定溶液。
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公开(公告)号：US08211615B2
公开(公告)日：2012-07-03
申请号：US12445948
申请日：2007-10-30
申请人： Takanori Yamagishi , Tomo Oikawa , Takayoshi Okada
发明人： Takanori Yamagishi , Tomo Oikawa , Takayoshi Okada
IPC分类号： G03F7/039 , C08F224/00 , C08F222/14 , C08F222/20
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , G03F7/2041 , Y10S430/111 , Y10S430/115
摘要： The present invention provides a copolymer which can prevent problems associated with immersion lithography (including occurrence of a pattern defect such as water mark, and variation in sensitivity or abnormal patterning due to elution of an additive such as a radiation-sensitive acid-generator) and which provides surface characteristics suitable for immersion lithography, and a composition containing the copolymer.The copolymer for immersion lithography has, at least, a repeating unit (A) that generates an alkali-soluble group by removing protecting group through action of an acid, and a repeating unit (B) having a lactone structure, wherein, when a solution of the copolymer in propylene glycol monomethyl ether acetate (hereinafter may be abbreviated as “PGMEA”) is applied to a wafer and then heated to form a thin film, and a 15-μL droplet of pure water is added onto the thin film, the inclination of the wafer at the time when the water droplet starts to move is 35° or less, or the contact angle of the top edge of the water droplet at the time when the water droplet starts to move is 64° or more.
摘要翻译： 本发明提供一种共聚物，其能够防止与浸渍光刻相关的问题（包括图案缺陷如水痕的发生，以及由于诸如辐射敏感的酸发生剂等添加剂的洗脱引起的灵敏度或异常图案的变化） 其提供适于浸渍光刻的表面特性，以及含有该共聚物的组合物。 用于浸渍光刻的共聚物至少具有通过酸的作用除去保护基而产生碱溶性基团的重复单元（A）和具有内酯结构的重复单元（B），其中当溶液 的丙二醇单甲醚乙酸酯共聚物（以下简称为“PGMEA”）施加到晶片上，然后加热形成薄膜，在薄膜上加入15μL的纯水滴， 当水滴开始移动时，晶片的倾斜度为35°以下，或水滴开始移动时的水滴顶端的接触角为64°以上。
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8.发明授权公开(公告)号：US07695889B2
公开(公告)日：2010-04-13
申请号：US11430738
申请日：2006-05-09
申请人： Takanori Yamagishi , Tomo Oikawa , Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita
发明人： Takanori Yamagishi , Tomo Oikawa , Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , G03F7/0046
摘要： A copolymer for semiconductor lithography, comprising at least a recurring unit (A) having a carboxylic acid ester structure whose solubility in alkali increases by the action of an acid and a carboxyl group-containing recurring unit (B), which copolymer is obtained via a step (P) of (co)polymerizing at least a monomer giving a recurring unit (A) and a step (Q) of forming a recurring unit (B) in the co-presence of a recurring unit (A)-containing (co)polymer and/or a monomer giving a recurring unit (A), and an acid.The copolymer is used in production of semiconductor as a resist polymer which is small in roughness, little in development defect and superior in lithography properties such as DOF and the like.
摘要翻译： 一种用于半导体光刻的共聚物，其至少包含具有羧酸酯结构的重复单元（A），其通过酸和含羧基的重复单元（B）的作用而在碱中的溶解度增加，该共聚物经由 （共）聚合至少一种产生重复单元的单体（A）的步骤（P）和形成重复单元（B）的步骤（Q），在含有重复单元（A）的（共） ）聚合物和/或提供重复单元（A）的单体和酸。 该共聚物用于生产半导体，作为抗蚀剂聚合物，其粗糙度小，显影缺陷少，并且光刻性能如DOF等优异。
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9.发明申请Copolymer and composition for semiconductor lithography and process for producing the copolymer 有权用于半导体光刻的共聚物和组合物以及用于制备共聚物的方法公开(公告)号：US20100062371A1
公开(公告)日：2010-03-11
申请号：US12311993
申请日：2007-10-19
申请人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
发明人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F2220/283 , G03F7/2041
摘要： [Task to be Achieved] To provide a chemically amplified type positive copolymer for semiconductor lithography, which has eliminated the problems of prior art, has a high development contrast, and has excellent resolution in fine-pattern formation; a composition for semiconductor lithography which contains the copolymer; and a process for producing the copolymer.[Means for Achievement] The copolymer for semiconductor lithography according to the present invention is a copolymer which has at least (A) a repeating unit having a structure which has an alkali-soluble group protected by an acid-labile, dissolution-suppressing group, (B) a repeating group having a lactone structure and (C) a repeating group having an alcoholic hydroxyl group and which is characterized by having an acid value of 0.01 mmol/g or less as determined by dissolving the copolymer in a solvent and subjecting the solution to neutralization titration with a solution of an alkali metal hydroxide using Bromothymol Blue as an indicator.
摘要翻译： [要实现的目的]为了提供消除现有技术问题的化学放大型半导体光刻用正共聚物，具有高显影对比度，并且在精细图案形成中具有优异的分辨率; 含有共聚物的半导体光刻用组合物; 和共聚物的制造方法。 [实现方法]本发明的半导体光刻用共聚物是至少具有（A）具有由酸不稳定，溶解抑制基团保护的碱溶性基团的结构的重复单元的共聚物， （B）具有内酯结构的重复基团和（C）具有醇羟基的重复基团，其特征在于通过将共聚物溶解在溶剂中而使酸值为0.01mmol / g以下， 使用溴百里酚蓝作为指示剂的碱金属氢氧化物溶液中和滴定溶液。
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公开(公告)号：US07972762B2
公开(公告)日：2011-07-05
申请号：US11913912
申请日：2006-04-26
申请人： Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita , Takanori Yamagishi , Tomo Oikawa
发明人： Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita , Takanori Yamagishi , Tomo Oikawa
CPC分类号： G03F7/0397 , C08F220/28 , Y10S430/111
摘要： Provided are a positive resist composition and a resist pattern forming method having fewer defects and superior lithographic characteristics. The positive resist composition includes a resin component (A) which has on a main chain a structural unit derived from an (α-lower alkyl)acrylate ester and exhibits increased alkali solubility under the action of an acid, and an acid generating component (B) which generates the acid upon irradiation with radiation, in which the resin component (A) is a copolymer having at least two structural units which is obtained by incorporating an acid when polymerizing at least one monomer for the production thereof.
摘要翻译： 提供了具有较少缺陷和优异的光刻特性的正型抗蚀剂组合物和抗蚀剂图案形成方法。 正型抗蚀剂组合物包括在主链上具有衍生自（α-低级烷基）丙烯酸酯的结构单元并且在酸的作用下表现出增加的碱溶解性的酸性产生组分（B）的树脂组分（A） ），其中树脂组分（A）是具有至少两个结构单元的共聚物，其中该结构单元在聚合至少一种用于制备它们的单体时通过掺入酸而获得。
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